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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK9610-100B,118

Name: BUK9610-100B,118
Brand: Nexperia USA Inc.
SKU: BUK9610-100B,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK9610-100B,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK9610-100B,118.pdf

Description:: MOSFET N-CH 100V 75A D2PAK

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Product details

Overview

BUK9610-100B,118 from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS logic-level power MOSFET in D2PAK (SOT404) package, designed for automotive critical 12 V/24 V/42 V load switching. It delivers 75 A continuous drain current at 5 V gate drive, 8.6 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, and operates up to 175 °C junction temperature - enabling robust motor, lamp, and solenoid control in engine bays and chassis modules.

For engineers reviewing the BUK9610-100B,118 datasheet, BUK9610-100B,118 pinout, BUK9610-100B,118 application, or BUK9610-100B,118 equivalent, key selection criteria include logic-level gate compatibility (V_GS(th) = 1.1–2.0 V), avalanche ruggedness (629 mJ), thermal resistance (R_th(j-mb) = 0.5 K/W), and automotive qualification status.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility, eliminating need for gate driver boost stages in 3.3 V/5 V microcontroller systems. Its internal drain-source diode supports freewheeling in inductive loads, and its unclamped avalanche rating enables reliable operation under inductive switching stress without external snubbers.

The D2PAK package features a thermally enhanced mounting base directly connected to the drain, enabling efficient heat transfer to heatsinks or PCB copper planes. Thermal performance is characterized by R_th(j-mb) = 0.5 K/W and derating curves showing stable 75 A current capability up to 100 °C mounting base temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V maximum - supports 42 V automotive systems with ≥2× voltage margin against load dump transients.
I_D (continuous)	75 A at T_mb = 25 °C - limited by package thermal capacity, not silicon, enabling high-current switching without external current sensing.
R_DS(on)	8.6 mΩ typ @ V_GS = 5 V, T_j = 25 °C - reduces conduction loss to ≤3.2 W at 20 A, minimizing heatsink requirements.
E_AS	629 mJ non-repetitive avalanche energy - withstands unclamped inductive turn-off events common in solenoid and motor control.
T_j max	175 °C - qualified for under-hood automotive environments where ambient exceeds 125 °C.
Q_GD	32 nC - enables fast, controllable switching with moderate gate drive strength (e.g., 10 Ω external resistor).
R_th(j-mb)	0.5 K/W - allows direct thermal coupling to heatsink, supporting >200 W power dissipation with modest thermal interface resistance.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Logic-level input controlling channel conduction; threshold 1.1–2.0 V enables direct drive from 3.3 V/5 V MCUs.
2	D (Drain)^[1]	No external connection possible - internally tied to mounting base; primary high-side power node and thermal interface.
3	S (Source)	Power return path and reference for gate drive; used for current sensing and feedback in high-side configurations.
mb	Mounting Base	Electrically connected to drain; provides low-impedance thermal path to heatsink or PCB copper; must be soldered for rated performance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive safety-critical applications including engine control, braking, and chassis systems.
Logic-level gate drive	V_GS(th) = 1.1–2.0 V ensures full enhancement with standard 3.3 V/5 V MCU outputs, eliminating level-shifter complexity.
175 °C junction rating	Enables operation in high-ambient under-hood locations without derating, supporting compact mechanical packaging.
Low R_DS(on) at 5 V	8.6 mΩ typ at V_GS = 5 V reduces I²R losses by >40% versus standard MOSFETs requiring 10 V gate drive.
High avalanche energy	629 mJ E_AS supports reliable inductive load switching without external clamping components in cost-sensitive designs.

Applications

Engine Cooling Fan Control

Headlamp Beam Switching

Use Scenario: PWM-controlled 12 V DC brushless fan in engine bay with ambient up to 125 °C.

IC Role / Device Role / Timing Role: High-side power switch handling 40 A peak current, synchronized to MCU PWM with <100 ns switching timing.

Use Value: 8.6 mΩ R_DS(on) limits conduction loss to 13.8 W at 40 A, while 175 °C rating avoids thermal shutdown during sustained high-load operation.

Use Scenario: Bi-directional headlamp beam selection (low/high) using dual-MOSFET H-bridge in front lighting module.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, commutating 15 A filament load with <250 ns turn-off delay.

Use Value: 32 nC Q_GD enables clean, fast transitions reducing shoot-through risk; integrated body diode supports freewheeling during dead-time.

Transmission Solenoid Driver

12 V/24 V Commercial Vehicle Lighting

Use Scenario: 24 V proportional solenoid actuator in automatic transmission valve body, operating continuously at 85 °C ambient.

IC Role / Device Role / Timing Role: High-side switch modulated via 1 kHz PWM to regulate hydraulic pressure; requires stable R_DS(on) over temperature.

Use Value: R_DS(on) increases only 2.9× from 25 °C to 175 °C (per Figure 12), ensuring predictable current regulation across full thermal range.

Use Scenario: Centralized 12 V/24 V LED lighting control unit for trucks and buses, switching multiple 10 A lamp strings.

IC Role / Device Role / Timing Role: Individual load switch per string, controlled by CAN-linked microcontroller; must survive load dump transients.

Use Value: 100 V V_DS rating provides 2.4× margin over 42 V load dump peaks (ISO 7637-2 Pulse 5a), eliminating need for external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V V_DS, 220 A I_D, 1.2 mΩ R_DS(on) @ 10 V - requires 10 V gate drive; not logic-level.	Not suitable for 5 V MCU direct drive; needs gate driver; higher current rating overshoots typical BUK9610-100B use cases.	Select only if system uses 10 V gate bias and requires >75 A current; verify thermal design for lower R_DS(on) but same package thermal resistance.
IRF1404ZLPbF	40 V V_DS, 180 A I_D, 3.8 mΩ R_DS(on) @ 10 V - not AEC-Q101 qualified; no avalanche rating specified.	Lacks automotive qualification and defined avalanche ruggedness; unsuitable for safety-critical or inductive switching in vehicles.	Acceptable only for non-automotive industrial 12 V switching where qualification and transient robustness are not required.

Compared with STL220N6F7 and IRF1404ZLPbF, BUK9610-100B,118 uniquely combines AEC-Q101 qualification, true logic-level gate drive (≤2 V threshold), 100 V rating, and documented 629 mJ avalanche energy - making it the only drop-in solution for automotive 12–42 V load switching where reliability and MCU compatibility are mandatory.

Availability

BUK9610-100B,118 is available at Aetrix Electronics and suitable for automotive engine control units, commercial vehicle lighting systems, and industrial motor drives requiring stable component supply with long-term lifecycle assurance.

Supply support for BUK9610-100B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and advanced packaging.

BUK9610-100B,118 belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for robust, low-loss switching in 12 V–42 V automotive subsystems where space, thermal constraints, and functional safety are critical.

FAQ

Is BUK9610-100B,118 suitable for high-side switching in 24 V automotive systems?

Yes. Its 100 V V_DS rating provides 4.2× margin over nominal 24 V, and its mounting base (drain-connected) enables direct heatsinking in high-side configurations. The 175 °C junction rating and AEC-Q101 qualification confirm suitability for under-hood placement with proper thermal design.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1, the normalized continuous drain current is 0.75× at T_mb = 100 °C, yielding 56.25 A (0.75 × 75 A). This value is limited by package thermal capacity, not silicon, and assumes adequate heatsinking to maintain T_mb ≤100 °C.

Does BUK9610-100B,118 require a gate resistor for safe switching?

Yes. A 10 Ω external gate resistor is specified in the datasheet for switching characterization (td(on)/td(off)). This value balances EMI control and switching speed; lower values increase dI/dt and risk oscillation, while higher values slow transitions and raise switching losses.

Can the internal source-drain diode replace an external freewheeling diode in solenoid circuits?

Yes. The diode has V_SD = 0.85–1.2 V at 40 A and t_rr = 78 ns, enabling efficient freewheeling in 12–42 V solenoid drivers. However, its reverse recovery charge (Q_r = 268 nC) must be accounted for in EMI filtering and layout to avoid voltage spikes.

BUK9610-100B,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 9.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 5 V

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 11045 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK9610-100B,118 FAQ

1.How can I place an order for BUK9610-100B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9610-100B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9610-100B,118 reliable?

The price and inventory of BUK9610-100B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9610-100B,118 is usually 5 days.

3.What payment methods are accepted for BUK9610-100B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9610-100B,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9610-100B,118?

BUK9610-100B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9610-100B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9610-100B,118?

For technical support, including BUK9610-100B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9610-100B,118 requirements.

6.How does Aetrix verify that BUK9610-100B,118 is sourced from the original manufacturer or authorized distributors?

All BUK9610-100B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9610-100B,118 meets industry standards.

7.What is the process for return or replacement of BUK9610-100B,118?

All BUK9610-100B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9610-100B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9610-100B,118 part is unused and in its original packaging.

Return procedure for BUK9610-100B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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