Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK9612-55B,118

Part No.:
BUK9612-55B,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK9612-55B,118.pdf
Description:
MOSFET N-CH 55V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,849

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK9612-55B,118 from Nexperia is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 9 mΩ RDS(on) at VGS = 10 V and 25 °C, supports 5 V gate drive, and is AEC-Q101 qualified for automotive power switching of 12 V/24 V loads including motors and solenoids.

For engineers reviewing the BUK9612-55B,118 datasheet, BUK9612-55B,118 pinout, BUK9612-55B,118 application, or BUK9612-55B,118 equivalent, key selection criteria include logic-level gate compatibility, 175 °C thermal rating, avalanche energy (172 mJ), low RDS(on) at 5 V drive, and D2PAK mounting-base thermal performance (Rth(j-mb) = 0.95 K/W).

Technical Context

This device uses TrenchMOS technology to achieve low conduction losses and stable threshold voltage across temperature (VGS(th) = 0.5–2.3 V from −55 °C to 175 °C). Its gate charge profile (QG(tot) = 31 nC, QGD = 12 nC) enables fast switching with controlled dV/dt in high-current automotive loads.

The integrated source-drain diode exhibits VSD = 0.85 V at 25 A and Tj = 25 °C, with trr = 55 ns and Qr = 53 nC-critical for freewheeling in inductive motor/solenoid control. Thermal design is anchored to the mounting base (not ambient), with Rth(j-mb) = 0.95 K/W enabling high-power dissipation in constrained chassis environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with load-dump margin.
RDS(on) @ VGS = 5 V 10.2 mΩ (typ) - Enables efficient 75 A switching with minimal I²R loss using standard 5 V MCU GPIOs.
Ptot 157 W @ Tmb = 25 °C - Power handling capacity defined by mounting base temperature, not ambient air.
Tj max 175 °C - Supports operation in under-hood environments without derating for thermal shutdown.
EAS 172 mJ - Unclamped avalanche energy rating ensures robustness against inductive kickback in motor/solenoid circuits.
QG(tot) 31 nC - Total gate charge enabling <100 ns turn-on/off times with 10 Ω external gate resistor.
Rth(j-mb) 0.95 K/W - Low junction-to-mounting-base thermal resistance allows direct heatsinking to metal chassis.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.

Pin/Terminal Circuit Role Design Meaning
1 Gate (G) Control input requiring ≥4.5 V for full enhancement; compatible with 5 V logic; low QGS (6 nC) enables fast turn-on.
2 Drain (D) Not externally accessible-internally bonded to mounting base; forms primary high-current output and thermal interface.
3 Source (S) Power return path; referenced to system ground; carries full load current and supports internal body diode conduction.
Mounting Base (mb) Drain / Thermal Interface Electrically tied to drain; provides low-inductance, high-current connection and dominant heat transfer path (Rth(j-mb) = 0.95 K/W).

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced at VGS = 4.5–5 V, eliminating need for gate driver ICs in MCU-controlled 12 V/24 V systems.
AEC-Q101 qualification Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages.
175 °C junction rating Enables uninterrupted operation in under-hood locations where ambient temperatures exceed 125 °C.
Low RDS(on) at elevated Tj RDS(on) = 24 mΩ @ VGS = 5 V, ID = 25 A, Tj = 175 °C-ensures predictable on-state loss in worst-case thermal conditions.
High avalanche ruggedness 172 mJ unclamped EAS withstands repetitive inductive energy spikes without degradation in motor/solenoid switching.

Applications

Automotive Body Control Module (BCM) 12 V Starter Solenoid Driver

Use Scenario: Switching high-current door locks, seat heaters, and lighting loads in modern BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling up to 75 A resistive/inductive loads.

Use Value: Eliminates need for discrete gate drivers due to 5 V logic compatibility and sustains 175 °C operation near HVAC units.

Use Scenario: Driving starter solenoid coils in 12 V passenger vehicles during cranking.

IC Role / Device Role / Timing Role: Low-side switch enabling precise timing of solenoid engagement via MCU PWM or digital control.

Use Value: Withstands repeated 322 A peak currents (tp ≤10 µs) and absorbs inductive flyback energy (172 mJ EAS) without failure.

24 V Commercial Vehicle Lighting Industrial DC Motor H-Bridge Leg

Use Scenario: Controlling LED headlamps and auxiliary lighting in trucks and buses with 24 V nominal systems.

IC Role / Device Role / Timing Role: High-current, thermally robust switch managing up to 75 A steady-state current with fast turn-off (tf = 75 ns).

Use Value: Maintains <10 mΩ RDS(on) at 5 V drive even at 100 °C mounting base, minimizing thermal runaway risk.

Use Scenario: One leg of an H-bridge driving brushed DC motors in industrial actuators and pumps.

IC Role / Device Role / Timing Role: Power stage switch with integrated body diode (VSD = 0.85 V) enabling efficient freewheeling.

Use Value: Reverse recovery time (trr = 55 ns) and recovered charge (Qr = 53 nC) reduce switching losses and EMI in 20 kHz PWM operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N5LF8AG 60 V VDS, 220 A ID, 1.8 mΩ RDS(on) @ 10 V, but requires 10 V gate drive for full spec; not AEC-Q101 qualified. Higher current/power capability but unsuitable for automotive qualification-critical designs. Select only for non-automotive 24 V industrial systems needing lower RDS(on) and higher ID.
IRF1404ZLPBF 40 V VDS, 195 A ID, 3.7 mΩ RDS(on) @ 10 V; logic-level but only rated to 175 °C junction, no AEC-Q101 certification. Limited to 40 V systems; lacks automotive qualification and avalanche energy rating (EAS unspecified). Acceptable for cost-sensitive 12 V non-automotive motor drives where qualification and 55 V margin are not required.

Compared with STL220N5LF8AG and IRF1404ZLPBF, the BUK9612-55B,118 uniquely combines AEC-Q101 qualification, 55 V rating, 5 V logic compatibility, and 172 mJ avalanche energy-making it the only drop-in solution for thermally demanding automotive power switching where reliability and compliance are mandatory.

Availability

BUK9612-55B,118 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V solenoid drivers, and industrial DC motor controllers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK9612-55B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK9612-55B belongs to Nexperia's TrenchMOS logic-level automotive power FET product line, engineered specifically for robust, high-current switching in space-constrained, thermally aggressive automotive environments.

FAQ

Is BUK9612-55B,118 pin-compatible with other D2PAK MOSFETs?

Yes-it uses standard SOT404 (D2PAK) footprint with pins 1 (G), 3 (S), and mounting base (D). Pin 2 is internally connected to drain and not externally accessible. PCB layout must accommodate the metal mounting base as the primary drain terminal and thermal interface, matching industry-standard D2PAK land patterns.

What is the maximum continuous drain current at 100 °C mounting base temperature?

At Tmb = 100 °C and VGS = 5 V, the maximum continuous drain current is 56 A per Figure 1 in the datasheet. This reflects thermal derating due to reduced power dissipation capability as mounting base temperature rises, independent of ambient conditions.

Does BUK9612-55B,118 require a gate resistor for safe operation?

Yes-a series gate resistor (typically 10 Ω) is recommended to control dI/dt and suppress oscillation during switching. The device's QG(tot) = 31 nC and QGD = 12 nC make it sensitive to ringing without proper gate drive impedance, especially in high-di/dt motor/solenoid applications.

Can BUK9612-55B,118 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (increasing with junction temperature) enables inherent current sharing when paralleled. However, matched gate drive layout, symmetrical thermal mounting, and individual gate resistors are required to ensure balanced dynamic current distribution and avoid shoot-through risks.

BUK9612-55B,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
3693 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
157W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK9612-55B,118 FAQ

1.How can I place an order for BUK9612-55B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9612-55B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9612-55B,118 reliable?

The price and inventory of BUK9612-55B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9612-55B,118 is usually 5 days.

3.What payment methods are accepted for BUK9612-55B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9612-55B,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9612-55B,118?

BUK9612-55B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9612-55B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9612-55B,118?

For technical support, including BUK9612-55B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9612-55B,118 requirements.

6.How does Aetrix verify that BUK9612-55B,118 is sourced from the original manufacturer or authorized distributors?

All BUK9612-55B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9612-55B,118 meets industry standards.

7.What is the process for return or replacement of BUK9612-55B,118?

All BUK9612-55B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9612-55B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9612-55B,118 part is unused and in its original packaging.

Return procedure for BUK9612-55B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9612-55B,118 Tags

  • BUK9612-55B,118
  • BUK9612-55B,118 PDF
  • BUK9612-55B,118 Datasheet
  • BUK9612-55B,118 Specifications
  • BUK9612-55B,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK9612-55B,118
  • Buy BUK9612-55B,118
  • BUK9612-55B,118 Price
  • BUK9612-55B,118 Distributor
  • BUK9612-55B,118 Supplier
  • BUK9612-55B,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER