NXP Semiconductors BUK9616-55A,118

Overview

BUK9616-55A from Nexperia is an N-channel TrenchMOS logic-level power MOSFET in TO220AB and SOT404 packages, rated for 55 V V_DS, 66 A DC drain current at T_mb = 25 °C, and 138 W total power dissipation. It features 15 mΩ R_DS(on) at V_GS = 10 V and operates up to 175 °C junction temperature, designed for high-current automotive load switching.

For engineers reviewing the BUK9616-55A datasheet, BUK9616-55A pinout, BUK9616-55A application, or BUK9616-55A equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.5 V typ.), low on-resistance at 5 V drive (16 mΩ), avalanche energy rating (120 mJ), and dual-package availability for through-hole or surface-mount thermal management.

Technical Context

This device uses trench-gate technology to achieve low R_DS(on) while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (1.0–2.0 V at 25 °C) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

The integrated body diode supports reverse current up to 66 A continuous, with V_SD = 0.85 V typical at 25 A and t_rr = 51 ns typical-critical for synchronous rectification and flyback snubbing in automotive DC-DC converters.

Key Specifications

Pinout & Package

BUK9616-55A is offered in two thermally optimized plastic packages: TO220AB (SOT78) and SOT404 (D2-PAK variant). Both feature pin 2 (drain) electrically connected to the mounting base/tab for low-inductance, high-current path and enhanced thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N5LF5 and IRFZ44NPBF, the BUK9616-55A delivers balanced performance: sufficient current capability (66 A) and avalanche ruggedness (120 mJ) in industry-standard TO220AB/SOT404 packages, making it ideal for automotive-grade load switching without footprint or thermal redesign.

Availability

BUK9616-55A is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor starters, and 48 V mild hybrid DC-DC converters requiring stable component supply across long production lifecycles.

Supply support for BUK9616-55A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with deep expertise in automotive-qualified components.

The BUK9616-55A belongs to Nexperia's TrenchMOS logic-level power MOSFET family, engineered specifically for robust, high-current switching in automotive and industrial environments where reliability under thermal and electrical stress is mandatory.

FAQ

What is the maximum continuous drain current for BUK9616-55A at 100 °C mounting base temperature?

The BUK9616-55A supports 46 A DC drain current at T_mb = 100 °C, as specified in the Limiting Values table. This derating reflects thermal resistance constraints and ensures safe operation within the 175 °C maximum junction temperature limit. Engineers must verify heatsink design to maintain T_mb ≤ 100 °C under full-load conditions to sustain this current rating in the BUK9616-55A.

Does BUK9616-55A have a specified avalanche energy rating, and how is it tested?

Yes, the BUK9616-55A has a non-repetitive unclamped inductive turn-off avalanche energy rating of 120 mJ, measured under conditions of ID = 49 A, VDD ≤ 25 V, VGS = 5 V, RGS = 50 Ω, and Tmb = 25 °C. The test circuit is defined in Figure 17 of the datasheet, using a controlled inductive load to simulate real-world inductive switching stress. This rating confirms the BUK9616-55A's ability to absorb transient energy without failure during relay or motor turn-off events.

Can BUK9616-55A be driven directly by a 3.3 V microcontroller GPIO?

Yes, the BUK9616-55A is a logic-level MOSFET with a typical gate threshold voltage of 1.5 V and guaranteed turn-on at V_GS ≥ 4.5 V. At 3.3 V drive, it achieves partial enhancement (R_DS(on) ≤ 17 mΩ), but full conduction (15 mΩ max) requires ≥5 V. For reliable 3.3 V operation, use a gate driver or ensure load current stays within derated R_DS(on) limits. The BUK9616-55A datasheet explicitly validates 4.5 V and 5 V gate drive performance.

What is the thermal resistance from junction to mounting base for BUK9616-55A, and why does it matter?

The BUK9616-55A has a maximum thermal resistance of 1.1 K/W from junction to mounting base (R_th(j-mb)). This low value is critical because the drain is internally connected to the mounting base/tab, enabling efficient heat transfer to an external heatsink. Unlike junction-to-ambient ratings, R_th(j-mb) reflects the dominant thermal path in properly mounted designs-making it the key parameter for calculating actual junction temperature in high-power applications of the BUK9616-55A.

How does the body diode performance of BUK9616-55A compare to standard rectifiers in freewheeling applications?

The BUK9616-55A's integrated body diode has a typical forward voltage of 0.85 V at 25 A and 51 ns reverse recovery time-comparable to fast recovery diodes used in motor drive freewheeling paths. Its Q_rr of 102 nC minimizes stored charge loss during commutation. While not optimized as a dedicated diode, this performance is sufficient for synchronous rectification and inductive load flyback in automotive and industrial switching circuits using the BUK9616-55A.