Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK9616-75B,118

Part No.:
BUK9616-75B,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK9616-75B,118.pdf
Description:
MOSFET N-CH 75V 67A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,533

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK9616-75B,118 from Nexperia is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 75 V drain-source voltage, 67 A continuous drain current at 25 °C mounting base temperature, and 157 W total power dissipation. It delivers 12 mΩ RDS(on) at VGS = 10 V and 25 °C, supports automotive AEC-Q101 qualification, and operates up to 175 °C junction temperature for engine bay and transmission control applications.

For engineers reviewing the BUK9616-75B,118 datasheet, BUK9616-75B,118 pinout, BUK9616-75B,118 application, or BUK9616-75B,118 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) typ. 1.5 V), low RDS(on) at 5 V gate drive (14 mΩ), avalanche energy rating (140 mJ), thermal resistance to mounting base (0.95 K/W), and automotive-grade reliability validation.

Technical Context

This device implements a trench-gate MOSFET architecture optimized for low conduction loss and fast switching in high-current DC loads. Its gate threshold voltage ranges from 0.5 V at 175 °C to 2.3 V at –55 °C, enabling robust turn-on across automotive temperature extremes while maintaining sub-1 µA gate leakage at ±15 V.

The integrated source-drain diode exhibits 0.85 V forward voltage at 25 A and 25 °C, with 96 ns reverse recovery time and 138 nC recovered charge-critical for inductive load commutation in motor and solenoid drivers. Dynamic parameters include 14 nC QGD, 35 nC QG(tot), and 3026 pF Ciss, supporting efficient gate driving in 12 V/24 V systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 75 V maximum - supports 42 V automotive bus transients per ISO 7637-2 without clamping.
ID (continuous) 67 A at Tmb = 25 °C - enables direct replacement of mechanical relays in high-current body electronics.
RDS(on) 12 mΩ @ VGS = 10 V, 25 °C - reduces conduction loss to ≤0.5 W at 25 A, easing thermal design.
RDS(on) @ 5 V 14 mΩ @ VGS = 5 V, 25 °C - ensures full enhancement using standard microcontroller GPIOs without level-shifting.
EAS 140 mJ non-repetitive avalanche energy - sustains unclamped inductive kickback from 24 V solenoids or motors during fault conditions.
Rth(j-mb) 0.95 K/W - allows >100 W power handling with moderate heatsinking when mounted on copper PCB area or chassis.
Tj max 175 °C - qualified for under-hood environments including transmission control modules and EPS ECUs.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base electrically connected to drain terminal for low-inductance thermal and electrical path.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Logic-level input requiring ≤10 V for full enhancement; gate charge QG(tot) = 35 nC enables fast switching with <10 Ω driver.
2 (D) Drain Not externally accessible - internally bonded to mounting base; primary high-side connection point for load return path.
3 (S) Source Low-side reference node; connects to ground plane; internal source inductance 7.5 nH minimizes ringing in PWM-driven loads.
Mounting Base Drain (electrical & thermal) Provides primary heat transfer path to heatsink/chassis; must be soldered to ≥200 mm² copper area for rated power handling.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive safety-critical systems including engine management and ADAS power stages.
Logic-level gate drive VGS(th) max 2.3 V at –55 °C ensures reliable turn-on with 3.3 V/5 V MCU outputs across full temperature range.
Low RDS(on) at 5 V 14 mΩ @ VGS = 5 V enables <1 W conduction loss at 25 A - eliminates need for external gate drivers in many body control modules.
175 °C junction rating Supports operation in high-ambient zones (e.g., near exhaust manifolds or inverters) without derating below 100 °C ambient.
Avalanche ruggedness 140 mJ EAS withstands repeated inductive switching events in motor drives without degradation or failure.

Applications

Engine Control Unit Load Switching Electric Power Steering Motor Driver

Use Scenario: High-side switching of fuel injector solenoids and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12 V/24 V inductive loads with precise pulse-width modulation at up to 20 kHz.

Use Value: 14 mΩ RDS(on) at 5 V gate drive reduces coil heating by >30% vs. legacy discrete FETs, extending solenoid life and improving fuel metering accuracy.

Use Scenario: Half-bridge low-side switch in 24 V EPS motor phase legs, handling peak currents >100 A.

IC Role / Device Role / Timing Role: Fast-switching power stage element with 102 ns td(off) and 57 ns tf enabling efficient 10–20 kHz PWM control.

Use Value: 0.95 K/W Rth(j-mb) allows direct mounting to aluminum housing, eliminating discrete heatsinks and reducing module size by 25%.

Automotive HVAC Blower Control Commercial Vehicle Lighting Management

Use Scenario: PWM-controlled DC motor driver for cabin air blower fans in passenger and commercial vehicles.

IC Role / Device Role / Timing Role: Low-loss power switch operating continuously at 30–50 A with thermal cycling from –40 °C to 125 °C ambient.

Use Value: 175 °C Tj rating prevents thermal shutdown during sustained high-load operation in summer conditions, ensuring uninterrupted airflow.

Use Scenario: Centralized LED headlamp and fog lamp switching in Class 8 trucks and buses with 24 V/42 V architectures.

IC Role / Device Role / Timing Role: High-reliability load switch managing 67 A steady-state current for multi-LED arrays with surge immunity.

Use Value: 140 mJ avalanche energy absorbs load dump transients up to 60 V, eliminating need for external TVS diodes in lamp control modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power FET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V VDS, 220 A ID, 1.2 mΩ RDS(on) @ 10 V - higher current, lower voltage, smaller DFN package. Targeted at compact 12 V battery management systems; not rated for 75 V transients or AEC-Q101. Select when board space is constrained and 60 V rating suffices; avoid for 42 V systems or automotive safety-critical use.
IRF1405ZPBF 55 V VDS, 169 A ID, 5.3 mΩ RDS(on) @ 10 V - TO-220 package, no AEC qualification, higher gate charge (130 nC). Suitable for industrial motor drives but lacks automotive qualification and thermal performance at elevated temperatures. Choose for cost-sensitive non-automotive applications where 55 V rating and TO-220 mounting are acceptable.

Compared with STL220N6F7 and IRF1405ZPBF, the BUK9616-75B,118 uniquely combines 75 V rating, AEC-Q101 compliance, 14 mΩ RDS(on) at 5 V, and 0.95 K/W thermal resistance-making it the only drop-in solution for thermally demanding, safety-critical 24 V/42 V automotive power switching.

Availability

BUK9616-75B,118 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and commercial vehicle lighting management requiring stable component supply and long-term lifecycle support.

Supply support for BUK9616-75B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to Nexperia's TrenchMOS automotive logic-level FET product line, engineered specifically for replacing electromechanical relays and discrete switches in harsh-environment vehicle subsystems.

FAQ

Is BUK9616-75B,118 pin-compatible with other D2PAK-packaged N-channel FETs?

No-pin 2 is internally connected to the mounting base and not externally accessible. Only pins 1 (gate) and 3 (source) are usable; the drain is exclusively routed through the mounting base. This differs from standard 3-pin D2PAK layouts and requires PCB layout adaptation to accommodate base-soldered drain connection.

What is the maximum safe operating area (SOA) limitation at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is derated to 47 A per limiting values table. The SOA curve (Figure 3) shows that at VDS = 30 V, the device supports ≤100 A for 10 ms pulses but only ≤25 A for DC operation-dictated by thermal resistance and power dissipation limits, not just current rating.

Does BUK9616-75B,118 require a gate resistor for automotive PWM applications?

Yes-a 5–10 Ω series gate resistor is recommended to dampen ringing caused by 7.5 nH internal source inductance and PCB trace inductance. Without it, fast switching (tf = 57 ns) can induce >10 V overshoot on gate drive lines, risking gate oxide stress in 12 V/24 V systems with long harness traces.

How does the source-drain diode performance compare to discrete Schottky solutions?

The integrated body diode has VSD = 0.85 V at 25 A and 25 °C, higher than typical Schottky diodes (0.3–0.5 V), but offers matched thermal tracking and eliminates parasitic inductance from external components. Its 96 ns trr and 138 nC Qr are optimized for snubberless inductive flyback in automotive solenoid drivers.

BUK9616-75B,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
4034 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
157W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK9616-75B,118 FAQ

1.How can I place an order for BUK9616-75B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9616-75B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9616-75B,118 reliable?

The price and inventory of BUK9616-75B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9616-75B,118 is usually 5 days.

3.What payment methods are accepted for BUK9616-75B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9616-75B,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9616-75B,118?

BUK9616-75B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9616-75B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9616-75B,118?

For technical support, including BUK9616-75B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9616-75B,118 requirements.

6.How does Aetrix verify that BUK9616-75B,118 is sourced from the original manufacturer or authorized distributors?

All BUK9616-75B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9616-75B,118 meets industry standards.

7.What is the process for return or replacement of BUK9616-75B,118?

All BUK9616-75B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9616-75B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9616-75B,118 part is unused and in its original packaging.

Return procedure for BUK9616-75B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9616-75B,118 Tags

  • BUK9616-75B,118
  • BUK9616-75B,118 PDF
  • BUK9616-75B,118 Datasheet
  • BUK9616-75B,118 Specifications
  • BUK9616-75B,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK9616-75B,118
  • Buy BUK9616-75B,118
  • BUK9616-75B,118 Price
  • BUK9616-75B,118 Distributor
  • BUK9616-75B,118 Supplier
  • BUK9616-75B,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER