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NXP Semiconductors BUK961R4-30E,118

Part No.:
BUK961R4-30E,118
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK961R4-30E,118.pdf
Description:
MOSFET N-CH 30V 120A D2PAK
Quantity:
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Payment
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Inventory:7,146

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Product details

Overview

BUK961R4-30E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in D2PAK (SOT404) package, rated for 30 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 1.18 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, enabling high-efficiency switching in automotive 12 V systems.

For engineers reviewing the BUK961R4-30E datasheet, BUK961R4-30E pinout, BUK961R4-30E application, or BUK961R4-30E equivalent, key selection criteria include its true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), repetitive avalanche rating, and thermal robustness in thermally demanding automotive environments.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance and fast switching with QG(tot) = 113 nC and QGD = 39.2 nC at VDS = 24 V. Its gate threshold voltage remains functional up to 175 °C, supporting reliable turn-on under extreme thermal stress.

The mounting base (pin 2/D) is electrically connected to the drain and serves as the primary thermal path, with Rth(j-mb) = 0.42 K/W. The source-drain diode exhibits VSD = 0.76 V at IS = 25 A and Tj = 25 °C, with trr = 62 ns and Qr = 112 nC for controlled commutation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum drain-source blocking voltage; defines safe operation in 12 V automotive systems with load-dump transients.
ID (continuous) 120 A at Tmb = 25 °C - Current capability limited by D2PAK package thermal performance; derates with mounting base temperature.
RDS(on) 1.18 mΩ at VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 30 A, critical for high-current motor/solenoid drivers.
VGS(th) 0.5 V min at Tj = 175 °C - Ensures guaranteed turn-on with standard 3.3 V/5 V logic controllers even under worst-case thermal conditions.
EDS(AL)S 1380 mJ - Single-pulse unclamped avalanche energy; supports robustness against inductive switching spikes without external snubbers.
Rth(j-mb) 0.42 K/W - Low junction-to-mounting-base thermal resistance enables direct heatsink attachment for high-power dissipation.
QGD 39.2 nC - Gate-drain charge determines Miller plateau duration; impacts switching speed and gate driver sizing in hard-switched topologies.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain for enhanced thermal transfer.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; accepts logic-level input (≥0.5 V threshold at 175 °C); requires ≤15 V DC rating per datasheet limiting values.
2 D (Drain) Main power output terminal; internally connected to mounting base for low-inductance, high-current drain path and thermal conduction.
3 S (Source) Power return reference; forms low-side switch common node; internal source inductance LS = 7.5 nH affects high-speed switching behavior.
Mounting base (mb) Drain connection Electrically tied to pin 2 (D); provides primary thermal interface to heatsink; must be soldered to copper area for rated Ptot = 357 W.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive use including temperature cycling, humidity testing, and mechanical shock per AEC standard.
Repetitive avalanche rating Rated for repeated inductive energy clamping without degradation-enables elimination of external avalanche protection in solenoid/motor drives.
175 °C junction rating Supports operation in engine bay or transmission control modules where ambient temperatures exceed 125 °C.
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures compatibility with 3.3 V microcontrollers and avoids need for gate boosters in space-constrained designs.
TrenchMOS technology Delivers optimized trade-off between RDS(on), QG, and ruggedness-critical for high-frequency PWM in start-stop micro-hybrid systems.

Applications

Engine Start-Stop Control Transmission Solenoid Driver

Use Scenario: High-current switching of starter motor engagement/disengagement during automatic engine restart in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side power switch controlling solenoid coil current; handles repetitive 120 A pulses with <100 ns switching transitions.

Use Value: 1.18 mΩ RDS(on) minimizes resistive heating during frequent engagement cycles; 1380 mJ avalanche rating absorbs coil flyback energy without failure.

Use Scenario: Precision current control of hydraulic pressure solenoids in automatic transmission valve bodies.

IC Role / Device Role / Timing Role: PWM-controlled power stage delivering regulated 5–20 A to solenoid windings at 1–10 kHz switching frequency.

Use Value: Low QGD (39.2 nC) and fast tf (111 ns) enable accurate duty-cycle resolution; 175 °C rating sustains reliability near hot gearbox housing.

12 V Battery Disconnect Switch High-Power Lamp Driver

Use Scenario: Isolation of auxiliary battery banks or safety-critical subsystems during fault conditions in commercial vehicle electrical architecture.

IC Role / Device Role / Timing Role: High-side or low-side disconnect switch activated via CAN-linked controller; must sustain 120 A short-circuit current.

Use Value: Repetitive avalanche capability and 30 V VDS withstand 24 V jump-start transients; Rth(j-mb) = 0.42 K/W allows direct heatsink mounting for sustained fault current handling.

Use Scenario: Dimmable headlamp or fog lamp control in adaptive lighting systems requiring rapid on/off sequencing and analog current regulation.

IC Role / Device Role / Timing Role: High-current, low-loss switching element in buck-derived constant-current LED driver topology.

Use Value: 1.18 mΩ RDS(on) reduces conduction loss at 30–60 A lamp currents; fast tr/tf (127 ns/111 ns) supports flicker-free PWM dimming above 1 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N3LLH6 30 V, 220 A, RDS(on) = 0.95 mΩ @ 5 V, but only rated to 150 °C junction; no AEC-Q101 certification stated in datasheet. Higher current capability suits larger solenoids, but lacks automotive qualification and high-temp gate threshold guarantee. Prefer BUK961R4-30E when AEC-Q101 compliance and 175 °C operation are mandatory.
IRL1404ZPBF 40 V, 162 A, RDS(on) = 3.2 mΩ @ 5 V; TO-220 package; not AEC-Q101 qualified; VGS(th) min = 1.0 V at 25 °C (not specified at 175 °C). Higher voltage margin useful in 24 V systems, but higher RDS(on) increases conduction loss; TO-220 limits power density vs. D2PAK. Choose BUK961R4-30E for compact 12 V automotive designs requiring guaranteed logic-level turn-on at extreme temperature.

Compared with STL220N3LLH6 and IRL1404ZPBF, the BUK961R4-30E uniquely combines AEC-Q101 qualification, 175 °C-rated logic-level gate, and sub-1.2 mΩ on-resistance in a thermally optimized D2PAK package-making it the preferred choice for mission-critical 12 V automotive power switching where thermal resilience and qualification integrity are non-negotiable.

Availability

BUK961R4-30E is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and start-stop micro-hybrid systems requiring stable component supply across extended production lifecycles.

Supply support for BUK961R4-30E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.

The BUK961R4-30E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for high-reliability, thermally demanding 12 V automotive power switching applications.

FAQ

What is the maximum continuous drain current rating for BUK961R4-30E?

The BUK961R4-30E has a maximum continuous drain current of 120 A at mounting base temperature (Tmb) = 25 °C. This rating is package-limited and decreases with rising Tmb, as shown in Figure 1 of the datasheet. At Tmb = 100 °C, the device still supports 120 A, confirming robust thermal design within its D2PAK package.

Is BUK961R4-30E qualified for automotive applications?

Yes, the BUK961R4-30E is explicitly designed and qualified to AEC-Q101 standards for high-performance automotive applications. It meets rigorous requirements for temperature cycling, humidity, mechanical shock, and long-term reliability-making it suitable for engine bay, transmission, and start-stop system deployments.

What is the gate threshold voltage of BUK961R4-30E at elevated temperature?

The BUK961R4-30E guarantees VGS(th) ≥ 0.5 V at junction temperature (Tj) = 175 °C, ensuring reliable turn-on with standard 3.3 V or 5 V logic controllers even under worst-case thermal stress. At 25 °C, VGS(th) ranges from 1.4 V to 2.1 V.

Does BUK961R4-30E have avalanche capability?

Yes, the BUK961R4-30E is repetitively avalanche rated. Its single-pulse unclamped avalanche energy (EDS(AL)S) is 1380 mJ at ID = 120 A, Vsup ≤ 30 V, and Tj(init) = 25 °C. This ruggedness supports reliable operation in inductive load switching without external protection components.

What package type does BUK961R4-30E use, and how is thermal management implemented?

The BUK961R4-30E uses the D2PAK (SOT404) package, where the mounting base is electrically connected to the drain and serves as the primary thermal interface. With Rth(j-mb) = 0.42 K/W, effective heatsinking requires soldering the mounting base to a large copper area or dedicated heatsink to achieve its full 357 W power dissipation capability.

BUK961R4-30E,118 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
113 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
16150 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
357W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK961R4-30E,118 FAQ

1.How can I place an order for BUK961R4-30E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK961R4-30E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK961R4-30E,118 reliable?

The price and inventory of BUK961R4-30E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK961R4-30E,118 is usually 5 days.

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BUK961R4-30E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK961R4-30E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK961R4-30E,118?

For technical support, including BUK961R4-30E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK961R4-30E,118 requirements.

6.How does Aetrix verify that BUK961R4-30E,118 is sourced from the original manufacturer or authorized distributors?

All BUK961R4-30E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK961R4-30E,118 meets industry standards.

7.What is the process for return or replacement of BUK961R4-30E,118?

All BUK961R4-30E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK961R4-30E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK961R4-30E,118 part is unused and in its original packaging.

Return procedure for BUK961R4-30E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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