NXP Semiconductors BUK961R4-30E,118
- Part No.:
- BUK961R4-30E,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK961R4-30E,118.pdf
- Description:
- MOSFET N-CH 30V 120A D2PAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BUK961R4-30E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in D2PAK (SOT404) package, rated for 30 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 1.18 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, enabling high-efficiency switching in automotive 12 V systems.
For engineers reviewing the BUK961R4-30E datasheet, BUK961R4-30E pinout, BUK961R4-30E application, or BUK961R4-30E equivalent, key selection criteria include its true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), repetitive avalanche rating, and thermal robustness in thermally demanding automotive environments.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance and fast switching with QG(tot) = 113 nC and QGD = 39.2 nC at VDS = 24 V. Its gate threshold voltage remains functional up to 175 °C, supporting reliable turn-on under extreme thermal stress.
The mounting base (pin 2/D) is electrically connected to the drain and serves as the primary thermal path, with Rth(j-mb) = 0.42 K/W. The source-drain diode exhibits VSD = 0.76 V at IS = 25 A and Tj = 25 °C, with trr = 62 ns and Qr = 112 nC for controlled commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operation in 12 V automotive systems with load-dump transients. |
| ID (continuous) | 120 A at Tmb = 25 °C - Current capability limited by D2PAK package thermal performance; derates with mounting base temperature. |
| RDS(on) | 1.18 mΩ at VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 30 A, critical for high-current motor/solenoid drivers. |
| VGS(th) | 0.5 V min at Tj = 175 °C - Ensures guaranteed turn-on with standard 3.3 V/5 V logic controllers even under worst-case thermal conditions. |
| EDS(AL)S | 1380 mJ - Single-pulse unclamped avalanche energy; supports robustness against inductive switching spikes without external snubbers. |
| Rth(j-mb) | 0.42 K/W - Low junction-to-mounting-base thermal resistance enables direct heatsink attachment for high-power dissipation. |
| QGD | 39.2 nC - Gate-drain charge determines Miller plateau duration; impacts switching speed and gate driver sizing in hard-switched topologies. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; accepts logic-level input (≥0.5 V threshold at 175 °C); requires ≤15 V DC rating per datasheet limiting values. |
| 2 | D (Drain) | Main power output terminal; internally connected to mounting base for low-inductance, high-current drain path and thermal conduction. |
| 3 | S (Source) | Power return reference; forms low-side switch common node; internal source inductance LS = 7.5 nH affects high-speed switching behavior. |
| Mounting base (mb) | Drain connection | Electrically tied to pin 2 (D); provides primary thermal interface to heatsink; must be soldered to copper area for rated Ptot = 357 W. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity testing, and mechanical shock per AEC standard. |
| Repetitive avalanche rating | Rated for repeated inductive energy clamping without degradation-enables elimination of external avalanche protection in solenoid/motor drives. |
| 175 °C junction rating | Supports operation in engine bay or transmission control modules where ambient temperatures exceed 125 °C. |
| True logic-level gate | VGS(th) ≥ 0.5 V at 175 °C ensures compatibility with 3.3 V microcontrollers and avoids need for gate boosters in space-constrained designs. |
| TrenchMOS technology | Delivers optimized trade-off between RDS(on), QG, and ruggedness-critical for high-frequency PWM in start-stop micro-hybrid systems. |
Applications
| Engine Start-Stop Control | Transmission Solenoid Driver |
|---|---|
Use Scenario: High-current switching of starter motor engagement/disengagement during automatic engine restart in micro-hybrid vehicles. IC Role / Device Role / Timing Role: Low-side power switch controlling solenoid coil current; handles repetitive 120 A pulses with <100 ns switching transitions. Use Value: 1.18 mΩ RDS(on) minimizes resistive heating during frequent engagement cycles; 1380 mJ avalanche rating absorbs coil flyback energy without failure. |
Use Scenario: Precision current control of hydraulic pressure solenoids in automatic transmission valve bodies. IC Role / Device Role / Timing Role: PWM-controlled power stage delivering regulated 5–20 A to solenoid windings at 1–10 kHz switching frequency. Use Value: Low QGD (39.2 nC) and fast tf (111 ns) enable accurate duty-cycle resolution; 175 °C rating sustains reliability near hot gearbox housing. |
| 12 V Battery Disconnect Switch | High-Power Lamp Driver |
Use Scenario: Isolation of auxiliary battery banks or safety-critical subsystems during fault conditions in commercial vehicle electrical architecture. IC Role / Device Role / Timing Role: High-side or low-side disconnect switch activated via CAN-linked controller; must sustain 120 A short-circuit current. Use Value: Repetitive avalanche capability and 30 V VDS withstand 24 V jump-start transients; Rth(j-mb) = 0.42 K/W allows direct heatsink mounting for sustained fault current handling. |
Use Scenario: Dimmable headlamp or fog lamp control in adaptive lighting systems requiring rapid on/off sequencing and analog current regulation. IC Role / Device Role / Timing Role: High-current, low-loss switching element in buck-derived constant-current LED driver topology. Use Value: 1.18 mΩ RDS(on) reduces conduction loss at 30–60 A lamp currents; fast tr/tf (127 ns/111 ns) supports flicker-free PWM dimming above 1 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A, RDS(on) = 0.95 mΩ @ 5 V, but only rated to 150 °C junction; no AEC-Q101 certification stated in datasheet. | Higher current capability suits larger solenoids, but lacks automotive qualification and high-temp gate threshold guarantee. | Prefer BUK961R4-30E when AEC-Q101 compliance and 175 °C operation are mandatory. |
| IRL1404ZPBF | 40 V, 162 A, RDS(on) = 3.2 mΩ @ 5 V; TO-220 package; not AEC-Q101 qualified; VGS(th) min = 1.0 V at 25 °C (not specified at 175 °C). | Higher voltage margin useful in 24 V systems, but higher RDS(on) increases conduction loss; TO-220 limits power density vs. D2PAK. | Choose BUK961R4-30E for compact 12 V automotive designs requiring guaranteed logic-level turn-on at extreme temperature. |
Compared with STL220N3LLH6 and IRL1404ZPBF, the BUK961R4-30E uniquely combines AEC-Q101 qualification, 175 °C-rated logic-level gate, and sub-1.2 mΩ on-resistance in a thermally optimized D2PAK package-making it the preferred choice for mission-critical 12 V automotive power switching where thermal resilience and qualification integrity are non-negotiable.
Availability
BUK961R4-30E is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and start-stop micro-hybrid systems requiring stable component supply across extended production lifecycles.
Supply support for BUK961R4-30E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.
The BUK961R4-30E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for high-reliability, thermally demanding 12 V automotive power switching applications.
FAQ
What is the maximum continuous drain current rating for BUK961R4-30E?
The BUK961R4-30E has a maximum continuous drain current of 120 A at mounting base temperature (Tmb) = 25 °C. This rating is package-limited and decreases with rising Tmb, as shown in Figure 1 of the datasheet. At Tmb = 100 °C, the device still supports 120 A, confirming robust thermal design within its D2PAK package.
Is BUK961R4-30E qualified for automotive applications?
Yes, the BUK961R4-30E is explicitly designed and qualified to AEC-Q101 standards for high-performance automotive applications. It meets rigorous requirements for temperature cycling, humidity, mechanical shock, and long-term reliability-making it suitable for engine bay, transmission, and start-stop system deployments.
What is the gate threshold voltage of BUK961R4-30E at elevated temperature?
The BUK961R4-30E guarantees VGS(th) ≥ 0.5 V at junction temperature (Tj) = 175 °C, ensuring reliable turn-on with standard 3.3 V or 5 V logic controllers even under worst-case thermal stress. At 25 °C, VGS(th) ranges from 1.4 V to 2.1 V.
Does BUK961R4-30E have avalanche capability?
Yes, the BUK961R4-30E is repetitively avalanche rated. Its single-pulse unclamped avalanche energy (EDS(AL)S) is 1380 mJ at ID = 120 A, Vsup ≤ 30 V, and Tj(init) = 25 °C. This ruggedness supports reliable operation in inductive load switching without external protection components.
What package type does BUK961R4-30E use, and how is thermal management implemented?
The BUK961R4-30E uses the D2PAK (SOT404) package, where the mounting base is electrically connected to the drain and serves as the primary thermal interface. With Rth(j-mb) = 0.42 K/W, effective heatsinking requires soldering the mounting base to a large copper area or dedicated heatsink to achieve its full 357 W power dissipation capability.
BUK961R4-30E,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.4mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 113 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 16150 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 357W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK961R4-30E,118 FAQ
1.How can I place an order for BUK961R4-30E,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK961R4-30E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK961R4-30E,118 reliable?
The price and inventory of BUK961R4-30E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK961R4-30E,118 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK961R4-30E,118?
For technical support, including BUK961R4-30E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK961R4-30E,118 requirements.
6.How does Aetrix verify that BUK961R4-30E,118 is sourced from the original manufacturer or authorized distributors?
All BUK961R4-30E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK961R4-30E,118 meets industry standards.
7.What is the process for return or replacement of BUK961R4-30E,118?
All BUK961R4-30E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK961R4-30E,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK961R4-30E,118 part is unused and in its original packaging.
Return procedure for BUK961R4-30E,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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