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NXP Semiconductors BUK961R7-40E,118
- Part No.:
- BUK961R7-40E,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK961R7-40E,118.pdf
- Description:
- MOSFET N-CH 40V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,177
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Product details
Overview
BUK961R7-40E from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS logic-level power MOSFET in D2PAK (SOT404) package, rated for 40 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 1.35 mΩ typical RDS(on) at VGS = 5 V and Tj = 25 °C. It serves as a high-current, thermally robust switching element in automotive 12 V systems including start-stop micro-hybrid control and transmission actuation.
For engineers reviewing the BUK961R7-40E datasheet, BUK961R7-40E pinout, BUK961R7-40E application, or BUK961R7-40E equivalent, key selection criteria include its true logic-level gate drive (VGS(th) ≥ 0.5 V at 175 °C), repetitive avalanche rating, 175 °C junction temperature capability, and mounting-base thermal resistance of 0.46 K/W - all critical for under-hood automotive power switching reliability.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-resistance with logic-level gate compatibility, enabling direct drive from 5 V microcontrollers without level-shifting. Its internal structure supports unclamped inductive switching with 801 mJ non-repetitive avalanche energy at ID = 120 A and Tj(init) = 25 °C.
The device features integrated source-drain diode with 46.5 ns reverse recovery time and 58.5 nC recovered charge, optimized for fast-switching DC-DC and motor control topologies. Thermal design is anchored to the mounting base (D2PAK leadframe), where Rth(j-mb) = 0.46 K/W enables high-power dissipation in constrained automotive PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; defines use in 12 V automotive systems with load-dump transients. |
| ID (continuous) | 120 A at Tmb = 25 °C - Package-limited current; requires heatsinking for sustained operation above ambient. |
| RDS(on) | 1.35 mΩ typ @ VGS = 5 V, Tj = 25 °C - Enables <1.5 W conduction loss at 60 A, critical for efficiency in high-current solenoid/motor drivers. |
| VGS(th) | 0.5 V min @ Tj = 175 °C - Ensures reliable turn-on under worst-case hot-cranking conditions without gate boosting. |
| EAS | 801 mJ - Non-repetitive avalanche energy; supports robustness against inductive kickback in transmission valve control. |
| Rth(j-mb) | 0.46 K/W - Junction-to-mounting-base thermal resistance; allows >300 W power dissipation with 140 K temperature rise across heatsink interface. |
| QG(tot) | 105.4 nC - Total gate charge; determines gate driver current requirement (~2 A peak for 50 ns turn-on with 5 Ω external resistor). |
Pinout & Package
D2PAK (SOT404) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; threshold voltage ≥0.5 V up to 175 °C ensures stable turn-on in engine bay environments. |
| 2 (D) | Drain | Main high-side or low-side power terminal; internally bonded to mounting base for low-inductance, high-current routing and thermal conduction. |
| 3 (S) | Source | Power return path; referenced to gate drive; internal source inductance of 7.5 nH impacts switching ringing in high-dI/dt applications. |
| Mounting base (mb) | Drain / Thermal interface | Electrically tied to drain; provides mechanical attachment and primary heat transfer path to heatsink or PCB copper plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity testing, and mechanical shock per AEC standard. |
| Repetitive avalanche rating | Enables safe operation in inductive load switching without external snubbers in transmission solenoid drivers. |
| 175 °C maximum junction temperature | Supports placement near hot components (e.g., exhaust, ECU power stages) without derating in start-stop duty cycles. |
| True logic-level gate | VGS(th) ≥ 0.5 V at 175 °C eliminates need for gate boosters or charge pumps in 5 V MCU-controlled systems. |
| Low RDS(on) × QG figure-of-merit | 1.35 mΩ × 105.4 nC = 142.3 - Balances conduction and switching losses for high-efficiency 12 V power switching. |
Applications
| Start-Stop Micro-Hybrid Control | Transmission Solenoid Actuation |
|---|---|
|
Use Scenario: Switching high-current battery disconnect relays and starter motor pre-engagement circuits during engine auto-stop/start cycles. IC Role / Device Role / Timing Role: High-side power switch controlling 12 V battery feed to starter solenoid and auxiliary loads. Use Value: 120 A continuous rating and 801 mJ avalanche energy ensure reliable interruption of inrush currents up to 1260 A peak without failure. |
Use Scenario: Driving hydraulic pressure control solenoids in automatic transmissions requiring precise PWM-based current regulation. IC Role / Device Role / Timing Role: Low-side switching element in closed-loop current-controlled H-bridge or half-bridge configurations. Use Value: 1.35 mΩ RDS(on) minimizes resistive heating during 20–30 A steady-state solenoid hold, extending coil life and reducing thermal stress on PCB. |
| 12 V Automotive Lighting Systems | Electric Power Steering (EPS) Motor Phasing |
|
Use Scenario: High-current switching of LED headlamp arrays and adaptive front-lighting modules with dynamic dimming and fault protection. IC Role / Device Role / Timing Role: Logic-level controlled power FET in constant-current LED driver output stage. Use Value: 40 V VDS rating accommodates ISO 7637-2 pulse 5a (load dump up to 40 V), ensuring immunity to automotive electrical transients. |
Use Scenario: Phase-leg switching in 12 V EPS motor inverters delivering torque assist during steering maneuvers. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg handling up to 80 A peak phase current. Use Value: 175 °C junction rating and 0.46 K/W Rth(j-mb) allow sustained operation under hood temperatures exceeding 125 °C without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, RDS(on) = 0.75 mΩ @ 10 V; requires 10 V gate drive for full performance; not AEC-Q101 qualified. | Better conduction loss at higher gate voltage but lacks automotive qualification and logic-level compatibility at 5 V. | Prefer BUK961R7-40E when 5 V MCU drive, AEC-Q101 compliance, or guaranteed 175 °C operation are mandatory. |
| IRF1404ZLPBF | 40 V, 180 A, RDS(on) = 2.7 mΩ @ 10 V; no AEC-Q101 rating; max Tj = 175 °C; gate threshold ~2–4 V - not logic-level. | Higher RDS(on) and non-logic gate require gate driver IC; unsuitable for direct 5 V MCU interface in automotive. | BUK961R7-40E offers lower RDS(on), verified automotive qualification, and true 5 V logic-level operation - superior for space-constrained, safety-critical vehicle systems. |
Compared with STL220N4F7AG and IRF1404ZLPBF, the BUK961R7-40E uniquely combines AEC-Q101 qualification, 5 V logic-level gate, 1.35 mΩ RDS(on), and 175 °C operation - making it the only option among the three qualified for direct integration into ASIL-B relevant power stages without additional gate support circuitry.
Availability
BUK961R7-40E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control units, and 12 V high-current lighting applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for BUK961R7-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.
The BUK961R7-40E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for thermally demanding 12 V automotive power switching where AEC-Q101 compliance, low RDS(on), and robust avalanche performance are essential.
FAQ
What is the maximum continuous drain current rating for BUK961R7-40E?
The BUK961R7-40E has a maximum continuous drain current of 120 A at mounting base temperature (Tmb) = 25 °C, limited by package thermal capacity rather than silicon. At Tmb = 100 °C, the rating remains 120 A due to thermal derating curves in the datasheet, confirming robust package design for high-power automotive use cases.
Is BUK961R7-40E compatible with 5 V microcontroller GPIO outputs?
Yes, the BUK961R7-40E is a true logic-level MOSFET with VGS(th) ≥ 0.5 V at Tj = 175 °C, ensuring full enhancement at 5 V gate drive across its entire operating temperature range. This eliminates the need for external gate drivers or level shifters in MCU-based automotive control modules.
Does BUK961R7-40E meet automotive reliability standards?
Yes, the BUK961R7-40E is fully qualified to AEC-Q101 standards for discrete semiconductors, covering stress tests such as temperature cycling, highly accelerated life testing (HALT), and mechanical shock - confirming suitability for under-hood automotive applications including start-stop and transmission control.
What is the thermal resistance from junction to mounting base for BUK961R7-40E?
The BUK961R7-40E has a maximum thermal resistance of Rth(j-mb) = 0.46 K/W from junction to mounting base. This low value enables efficient heat transfer to an external heatsink or copper plane, supporting >300 W power dissipation with a 140 K temperature rise - critical for compact automotive power modules.
Can BUK961R7-40E be used in avalanche-mode switching applications?
Yes, the BUK961R7-40E is repetitively avalanche rated with a non-repetitive drain-source avalanche energy (EAS) of 801 mJ at ID = 120 A and Tj(init) = 25 °C. This ruggedness supports reliable operation in inductive load switching like solenoid and motor control without external clamping components.
BUK961R7-40E,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 105.4 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15010 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 324W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK961R7-40E,118 FAQ
1.How can I place an order for BUK961R7-40E,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK961R7-40E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK961R7-40E,118 reliable?
The price and inventory of BUK961R7-40E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK961R7-40E,118 is usually 5 days.
3.What payment methods are accepted for BUK961R7-40E,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK961R7-40E,118 transactions.
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4.How is shipping managed for BUK961R7-40E,118?
BUK961R7-40E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK961R7-40E,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK961R7-40E,118?
For technical support, including BUK961R7-40E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK961R7-40E,118 requirements.
6.How does Aetrix verify that BUK961R7-40E,118 is sourced from the original manufacturer or authorized distributors?
All BUK961R7-40E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK961R7-40E,118 meets industry standards.
7.What is the process for return or replacement of BUK961R7-40E,118?
All BUK961R7-40E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK961R7-40E,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK961R7-40E,118 part is unused and in its original packaging.
Return procedure for BUK961R7-40E,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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