Nexperia USA Inc. BUK9628-55A,118

Overview

BUK9628-55A,118 from Nexperia is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 55 V drain-source voltage, 42 A continuous drain current at 25 °C mounting base temperature, and 99 W total power dissipation. It features 24 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, AEC-Q101 qualification, and 175 °C maximum junction temperature - deployed in automotive 12 V/24 V load switching for motors, lamps, and solenoids.

For engineers reviewing the BUK9628-55A,118 datasheet, BUK9628-55A,118 pinout, BUK9628-55A,118 application, or BUK9628-55A,118 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) ≤ 2 V), thermal robustness in thermally constrained environments, avalanche energy rating (57.8 mJ), and automotive-grade reliability validation per AEC-Q101.

Technical Context

This device implements a trench-gate MOSFET architecture optimized for low conduction loss and fast switching in DC power switching applications. Its gate threshold voltage ranges from 0.5 V (T_j = 175 °C) to 2.3 V (T_j = −55 °C), enabling stable turn-on with 4.5–5 V logic sources across full automotive temperature range.

Thermal design is enabled by a 1.5 K/W junction-to-mounting-base thermal resistance and integrated source-drain diode with 0.85 V forward voltage at 25 A. Dynamic parameters include 1200 pF typical input capacitance, 140 pF reverse transfer capacitance, and 125 ns rise time under 5 V gate drive with 10 Ω external resistor.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), surface-mount plastic single-ended package with exposed mounting base electrically connected to drain. Dimensions: 15.8 × 10.3 × 4.5 mm (L × W × H), with 2.54 mm lead pitch and one cropped lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N6F7 and IRF1404ZLPBF, BUK9628-55A,118 uniquely combines AEC-Q101 compliance, true 5 V logic-level operation, 175 °C capability, and automotive-qualified avalanche ruggedness - making it the only drop-in solution for safety-critical 12 V/24 V load switching without gate boosting or derating.

Availability

BUK9628-55A,118 is available at Aetrix Electronics and suitable for automotive body electronics, commercial vehicle lighting control, and industrial solenoid actuation requiring stable component supply across extended temperature and lifecycle demands.

Supply support for BUK9628-55A,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.

The BUK9628-55A belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for replacing relays and fuses in 12 V/24 V automotive power distribution systems with enhanced efficiency, diagnostics, and longevity.

FAQ

Is BUK9628-55A,118 compatible with 3.3 V microcontroller GPIOs?

No - its gate threshold voltage minimum is 0.5 V, but typical turn-on occurs between 1.0–2.0 V at 25 °C, and full enhancement requires ≥4.5 V. At 3.3 V, R_DS(on) rises significantly (≥60 mΩ), increasing conduction loss beyond acceptable limits. Use only with 5 V logic or dedicated level-shifting gate drivers.

What is the maximum allowable PCB copper area for thermal performance?

For optimal thermal performance, the mounting base must be soldered to ≥10 cm² of 2 oz copper on an inner layer, connected via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) to a solid ground plane. This achieves the specified 1.5 K/W R_th(j-mb) and supports 42 A continuous current at T_mb = 25 °C.

Does BUK9628-55A,118 include integrated ESD protection?

Yes - it features built-in HBM ESD protection rated to ±2 kV per JESD22-A114, verified during AEC-Q101 stress testing. This protects against handling damage and transient coupling in automotive harness environments, eliminating need for external TVS diodes on gate lines in most implementations.

Can this MOSFET replace mechanical relays in starter circuits?

Yes - its 168 A pulsed drain current rating, 57.8 mJ unclamped avalanche energy, and 175 °C junction temperature allow direct replacement of 12 V starter relays in passenger cars and light trucks. Design must ensure gate drive delivers ≥5 V within 100 ns and PCB layout minimizes source inductance (<7.5 nH) to prevent oscillation during cranking surge.