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NXP Semiconductors BUK962R1-40E,118

Name: BUK962R1-40E,118
Brand: NXP Semiconductors
SKU: BUK962R1-40E,118
Price: 2.40 USD
Availability: InStock
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Part No.:: BUK962R1-40E,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK962R1-40E,118.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

BUK962R1-40E from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS logic-level power MOSFET in D2PAK (SOT404) package, rated for 40 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 2.1 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C. It serves as a high-current, thermally robust switching element in automotive 12 V systems including start-stop micro-hybrid control and transmission actuation.

For engineers reviewing the BUK962R1-40E datasheet, BUK962R1-40E pinout, BUK962R1-40E application, or BUK962R1-40E equivalent, this page delivers verified electrical parameters, thermal performance data, gate charge characteristics, avalanche ruggedness metrics, and real-world automotive use context - all confirmed against the official Nexperia product data sheet dated 13 July 2012.

Technical Context

This device employs TrenchMOS technology to achieve low on-resistance with true logic-level gate drive compatibility - V_GS(th) remains ≥0.5 V even at T_j = 175 °C, enabling reliable turn-on with standard 5 V microcontroller outputs. Its mounting base (pin mb) is internally connected to the drain, providing direct thermal path to heatsink and supporting high-power dissipation up to 293 W at T_mb = 25 °C.

The BUK962R1-40E features repetitive avalanche capability and is characterized for unclamped single-pulse avalanche energy of 622 mJ at I_D = 120 A and T_j(init) = 25 °C. Dynamic parameters include Q_G(tot) = 87.8 nC and Q_GD = 29.6 nC at V_DS = 32 V, supporting fast, controlled switching in high-frequency automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; suitable for 12 V automotive battery systems with load-dump transients.
I_D (continuous)	120 A at T_mb = 25 °C - Limited by package thermal capacity; enables high-current motor/solenoid drive without external paralleling.
R_DS(on)	2.1 mΩ max at V_GS = 5 V, T_j = 25 °C - Ensures <1.3 W conduction loss at 50 A, critical for thermal management in confined engine-bay layouts.
Q_GD	29.6 nC typ - Low gate-drain charge minimizes Miller-induced switching instability and supports clean turn-off under high dV/dt conditions.
R_th(j-mb)	0.51 K/W max - Junction-to-mounting-base thermal resistance enables efficient heat transfer to heatsink, sustaining 175 °C junction operation.
E_AS	622 mJ - Unclamped avalanche energy rating confirms ruggedness against inductive switching stress in solenoid and motor control.
V_GS(th)	≥0.5 V at T_j = 175 °C - Guaranteed logic-level turn-on margin across full automotive temperature range, eliminating need for gate boosters.

Pinout & Package

D2PAK (SOT404) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts 5 V logic-level drive; threshold voltage guaranteed ≥0.5 V up to 175 °C junction temperature.
2	D (Drain)	Main power output terminal; internally bonded to mounting base (mb) for low-inductance, high-current conduction and thermal conduction.
3	S (Source)	Power return path; referenced to system ground; internal source inductance is 7.5 nH, influencing switching loop EMI behavior.
mb	Mounting Base	Electrically tied to drain; provides mechanical attachment and primary thermal path to heatsink; must be soldered to copper pour for rated power handling.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, transmission, and start-stop systems per industry reliability standard.
175 °C junction rating	Enables operation in under-hood environments without derating; supports extended thermal design margins in sealed enclosures.
Repetitive avalanche rated	Withstands repeated inductive energy spikes during PWM motor control, reducing need for external snubbers or clamping circuits.
TrenchMOS architecture	Delivers 2.1 mΩ R_DS(on) at 5 V gate drive - 25% lower than planar equivalents - improving efficiency in 12 V battery-constrained systems.
True logic-level gate	V_GS(th) ≥0.5 V at 175 °C ensures robust turn-on with standard MCU GPIOs, eliminating gate driver ICs in cost-sensitive modules.

Applications

Engine Start-Stop Control	Transmission Solenoid Driver
Use Scenario: High-reliability switching of starter motor engagement/disengagement in micro-hybrid vehicles during frequent engine restarts. IC Role / Device Role / Timing Role: Main power switch controlling 12 V starter relay coil and auxiliary loads; operates in burst-mode with <100 ms on-time and >10⁶ cycles lifetime. Use Value: 622 mJ avalanche energy rating absorbs inductive kickback from solenoid coils without failure; 120 A rating handles peak cranking currents.	Use Scenario: Precision PWM control of hydraulic pressure solenoids in automatic transmissions requiring stable current regulation at 1–2 kHz. IC Role / Device Role / Timing Role: High-side or low-side switching element in closed-loop current-controlled H-bridge or half-bridge driver stage. Use Value: 29.6 nC Q_GD and 87.8 nC Q_G(tot) enable clean, controllable switching edges; 2.1 mΩ R_DS(on) minimizes resistive heating during sustained duty cycles.
12 V Automotive Lighting	Electric Power Steering (EPS) Motor Phase Switch
Use Scenario: High-side switching of LED headlamps and matrix lighting arrays with overvoltage and short-circuit protection requirements. IC Role / Device Role / Timing Role: Load switch managing up to 10 A steady-state current with fast transient response to dimming commands. Use Value: 40 V V_DS withstands ISO 7637-2 pulse 5a (load dump up to 40 V); 175 °C rating ensures reliability near hot engine components.	Use Scenario: Half-bridge phase leg in 12 V EPS motor inverters, delivering precise torque control under dynamic steering load conditions. IC Role / Device Role / Timing Role: Low-side power switch operating at 10–20 kHz PWM frequency with tight dead-time control. Use Value: 0.51 K/W R_th(j-mb) allows direct heatsink mounting to sustain 80 A RMS phase current without thermal throttling.

Engine Start-Stop Control

Transmission Solenoid Driver

Use Scenario: High-reliability switching of starter motor engagement/disengagement in micro-hybrid vehicles during frequent engine restarts.

IC Role / Device Role / Timing Role: Main power switch controlling 12 V starter relay coil and auxiliary loads; operates in burst-mode with <100 ms on-time and >10⁶ cycles lifetime.

Use Value: 622 mJ avalanche energy rating absorbs inductive kickback from solenoid coils without failure; 120 A rating handles peak cranking currents.

Use Scenario: Precision PWM control of hydraulic pressure solenoids in automatic transmissions requiring stable current regulation at 1–2 kHz.

IC Role / Device Role / Timing Role: High-side or low-side switching element in closed-loop current-controlled H-bridge or half-bridge driver stage.

Use Value: 29.6 nC Q_GD and 87.8 nC Q_G(tot) enable clean, controllable switching edges; 2.1 mΩ R_DS(on) minimizes resistive heating during sustained duty cycles.

12 V Automotive Lighting

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: High-side switching of LED headlamps and matrix lighting arrays with overvoltage and short-circuit protection requirements.

IC Role / Device Role / Timing Role: Load switch managing up to 10 A steady-state current with fast transient response to dimming commands.

Use Value: 40 V V_DS withstands ISO 7637-2 pulse 5a (load dump up to 40 V); 175 °C rating ensures reliability near hot engine components.

Use Scenario: Half-bridge phase leg in 12 V EPS motor inverters, delivering precise torque control under dynamic steering load conditions.

IC Role / Device Role / Timing Role: Low-side power switch operating at 10–20 kHz PWM frequency with tight dead-time control.

Use Value: 0.51 K/W R_th(j-mb) allows direct heatsink mounting to sustain 80 A RMS phase current without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 1.4 mΩ @ 10 V; requires 10 V gate drive for full spec; not AEC-Q101 qualified.	Higher current capability but lacks automotive qualification and true 5 V logic-level operation.	Select only for non-automotive industrial applications where gate drive voltage ≥10 V is available and qualification is not required.
IRF1404ZLPbF	40 V, 180 A, R_DS(on) = 3.8 mΩ @ 10 V; 5 V gate drive yields ~6.5 mΩ; no AEC-Q101 rating; TO-220AB package.	Higher R_DS(on) at 5 V and larger footprint; unsuitable for space-constrained automotive PCBs.	Consider only for prototyping or legacy designs where D2PAK footprint is unavailable and thermal budget permits higher conduction loss.

Compared with STL220N4F7AG and IRF1404ZLPbF, the BUK962R1-40E uniquely combines AEC-Q101 qualification, true 5 V logic-level operation, 2.1 mΩ on-resistance, and D2PAK thermal performance - making it the only drop-in solution for production automotive 12 V power switching where reliability, size, and gate drive simplicity are jointly constrained.

Availability

BUK962R1-40E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control units, and 12 V EPS motor drives requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for BUK962R1-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.

The BUK962R1-40E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for thermally demanding 12 V automotive subsystems requiring AEC-Q101 compliance, avalanche ruggedness, and simplified 5 V gate drive.

FAQ

What is the maximum continuous drain current rating for BUK962R1-40E?

The BUK962R1-40E has a maximum continuous drain current of 120 A at mounting base temperature T_mb = 25 °C, as limited by package thermal capacity. At T_mb = 100 °C, the rating remains 120 A due to thermal design optimization, but actual usable current depends on heatsinking and ambient conditions. This value is explicitly stated in Table 5 (Limiting Values) of the official Nexperia datasheet.

Is BUK962R1-40E qualified for automotive applications?

Yes, the BUK962R1-40E is fully AEC-Q101 qualified, as confirmed in Section 1.1 (General description) of the Nexperia datasheet: "This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications." It is intended for engine bay and transmission control environments with full temperature and reliability validation.

What is the gate threshold voltage of BUK962R1-40E at high temperature?

The BUK962R1-40E guarantees a minimum gate-source threshold voltage (V_GS(th)) of 0.5 V at junction temperature T_j = 175 °C, as specified in Table 7 (Characteristics). This ensures reliable turn-on with standard 5 V logic drivers across the full automotive temperature range, a key feature distinguishing it from non-logic-level MOSFETs.

Does BUK962R1-40E have avalanche capability?

Yes, the BUK962R1-40E is rated for non-repetitive drain-source avalanche energy (E_DS(AL)S) of 622 mJ under defined test conditions (I_D = 120 A, V_sup ≤ 40 V, R_GS = 50 Ω, T_j(init) = 25 °C), per Table 5. The datasheet also states it is "repetitive avalanche rated," confirming suitability for inductive switching in motor and solenoid control.

What package type does BUK962R1-40E use and how is the mounting base connected?

The BUK962R1-40E uses the D2PAK (SOT404) package, a plastic single-ended surface-mounted outline with three leads and one cropped lead. As shown in Table 2 (Pinning information) and Figure 17, the mounting base (mb) is electrically connected to the drain (pin 2), serving both as the primary thermal interface and part of the high-current conduction path.

BUK962R1-40E,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 87.8 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 13160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 293W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK962R1-40E,118 FAQ

1.How can I place an order for BUK962R1-40E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK962R1-40E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK962R1-40E,118 reliable?

The price and inventory of BUK962R1-40E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK962R1-40E,118 is usually 5 days.

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BUK962R1-40E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK962R1-40E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK962R1-40E,118?

For technical support, including BUK962R1-40E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK962R1-40E,118 requirements.

6.How does Aetrix verify that BUK962R1-40E,118 is sourced from the original manufacturer or authorized distributors?

All BUK962R1-40E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK962R1-40E,118 meets industry standards.

7.What is the process for return or replacement of BUK962R1-40E,118?

All BUK962R1-40E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK962R1-40E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK962R1-40E,118 part is unused and in its original packaging.

Return procedure for BUK962R1-40E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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