Nexperia USA Inc. BUK962R5-60E,118
- Part No.:
- BUK962R5-60E,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK962R5-60E,118.pdf
- Description:
- MOSFET N-CH 60V 120A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,942
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Product details
Overview
BUK962R5-60E from Nexperia is a logic-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 60 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 2.5 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It is AEC-Q101 qualified, avalanche-rated, and designed for high-current automotive power switching - including start-stop micro-hybrid systems and transmission control.
For engineers reviewing the BUK962R5-60E datasheet, BUK962R5-60E pinout, BUK962R5-60E application, or BUK962R5-60E equivalent, this device is selected for thermally demanding 12 V automotive loads requiring true logic-level gate drive, repetitive avalanche capability, and junction temperature operation up to 175 °C.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance with robust thermal performance. Its gate threshold voltage exceeds 0.5 V at 175 °C, ensuring reliable turn-on under worst-case thermal conditions in automotive environments.
The device integrates a source-drain diode with 53 ns reverse recovery time and 98 nC recovered charge, supporting synchronous rectification and inductive load switching. Mounting base thermal resistance is 0.43 K/W, enabling high-power dissipation when soldered to a heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; supports full 12 V automotive system transients including load dump. |
| RDS(on) | 2.5 mΩ @ VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 20 A, critical for high-efficiency motor/solenoid drivers. |
| ID (cont) | 120 A @ Tmb = 25 °C - Package-limited continuous current; usable up to 120 A with proper heatsinking and board layout. |
| EAS | 655 mJ - Non-repetitive avalanche energy rating; allows safe clamping of inductive kickback without external snubbers. |
| Tj max | 175 °C - Junction temperature limit enabling operation in engine bay and transmission control modules. |
| QGD | 41.2 nC - Gate-drain charge value directly impacts switching loss and EMI during hard-switching in DC-DC and motor drives. |
| Rth(j-mb) | 0.43 K/W - Low junction-to-mounting-base thermal resistance enables >300 W power handling with active heatsink attachment. |
Pinout & Package
SOT404 (D2PAK) package with isolated mounting base electrically connected to the drain terminal. Requires thermal pad soldering to PCB copper pour or external heatsink for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level input; VGS(th) ≥ 0.5 V at 175 °C ensures turn-on with standard 5 V MCU GPIOs even at peak temperature. |
| 2 (D) | Drain | Main high-side or low-side power path; internally bonded to mounting base for direct thermal conduction. |
| 3 (S) | Source | Power return node; referenced for gate drive; forms source-drain body diode for freewheeling. |
| Mounting Base (mb) | Drain (electrically tied) | Primary thermal interface; must be soldered to ≥ 10 cm² copper area or heatsink to maintain Tj ≤ 175 °C at full load. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use per stress test requirements including temperature cycling, HTRB, and UHAST - required for engine control and safety-critical subsystems. |
| Repetitive avalanche rating | Enables robust operation in inductive switching applications without external protection; eliminates need for discrete avalanche diodes in solenoid drivers. |
| True logic-level gate | VGS(th) > 0.5 V at 175 °C ensures guaranteed turn-on with 5 V microcontrollers across full automotive temperature range. |
| 175 °C junction rating | Supports placement in high-temperature zones (e.g., near engines or transmissions) without derating or forced cooling. |
| Low QG/QGD ratio | QGS = 25.6 nC, QGD = 41.2 nC - Optimized for fast, controllable switching with reduced Miller effect in 10–100 kHz motor control. |
Applications
| Start-Stop Micro-Hybrid Control | Transmission Solenoid Driver |
|---|---|
|
Use Scenario: High-current engagement/disengagement of starter motor and belt-driven integrated starter-generator (BISG) during engine restart. IC Role / Device Role / Timing Role: Main power switch controlling 12 V battery-to-starter path; handles 100+ A pulsed currents with <10 µs turn-off for precise timing. Use Value: 655 mJ avalanche energy absorbs inductive energy from starter coil without failure; 175 °C rating sustains repeated hot cranking cycles. |
Use Scenario: PWM-controlled hydraulic pressure modulation in automatic transmission valve bodies. IC Role / Device Role / Timing Role: Low-side driver for 12 V solenoids drawing up to 8 A; switched at 1–10 kHz with tight duty cycle control. Use Value: 2.5 mΩ RDS(on) limits conduction loss to <170 mW at 8 A, reducing thermal load on compact transmission control unit PCB. |
| Engine Cooling Fan Driver | Electric Power Steering (EPS) Motor Phase Switch |
|
Use Scenario: Variable-speed control of high-power radiator fans in ICE vehicles under full-load thermal conditions. IC Role / Device Role / Timing Role: High-side or low-side switch in H-bridge or 3-phase inverter stage; operates continuously at ambient >105 °C. Use Value: 0.43 K/W Rth(j-mb) enables 200 W dissipation with 40 °C rise above heatsink - sufficient for 30 A fan loads. |
Use Scenario: Phase-leg switching in 12 V EPS motor inverters, where reliability and thermal margin are critical for steering assist function. IC Role / Device Role / Timing Role: N-channel MOSFET in half-bridge configuration; commutates motor current with <200 ns turn-off delay and low QGD. Use Value: 41.2 nC QGD minimizes voltage overshoot during high-dV/dt switching, reducing EMI and gate driver stress in safety-critical EPS systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | RDS(on) = 1.8 mΩ @ 10 V, but requires 10 V gate drive; no AEC-Q101 certification listed in public datasheet. | Not qualified for automotive safety-critical systems; suitable only for non-safety 12 V industrial loads. | Select only if gate drive is ≥10 V and AEC-Q101 compliance is not required. |
| IRFB4115PBF | 60 V, 110 A, RDS(on) = 3.2 mΩ @ 10 V; TO-220AB package; no 175 °C rating or repetitive avalanche spec. | Limited to lower-temperature under-hood locations; unsuitable for sustained 150 °C ambient operation. | Choose only for cost-sensitive, non-automotive applications with adequate heatsinking and <125 °C ambient. |
Compared with STL220N6F7 and IRFB4115PBF, BUK962R5-60E uniquely combines AEC-Q101 qualification, 175 °C operation, true 5 V logic-level drive, and documented repetitive avalanche capability - making it the only drop-in solution for start-stop, transmission, and EPS systems requiring functional safety alignment.
Availability
BUK962R5-60E is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and start-stop micro-hybrid systems requiring stable component supply and long-term lifecycle support.
Supply support for BUK962R5-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
BUK962R5-60E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for high-current, high-temperature 12 V vehicle subsystems where AEC-Q101 compliance and thermal ruggedness are mandatory.
FAQ
Is BUK962R5-60E pin-compatible with other D2PAK MOSFETs?
Yes - it uses standard SOT404 (D2PAK) footprint with 3 leads (one cropped) and identical mechanical dimensions per IEC JEDEC outline sot404_po. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, and mounting base is electrically tied to drain. Layout compatibility is confirmed by Nexperia's package drawing revision 06-03-16.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 2 in the datasheet, the continuous drain current is 120 A at Tmb = 25 °C and remains 120 A at Tmb = 100 °C due to package limitation - not junction temperature derating. This reflects the device's ability to sustain full rated current under elevated under-hood thermal conditions when properly heatsinked.
Does BUK962R5-60E include an integrated gate resistor or ESD protection?
No - it is a bare silicon MOSFET with no integrated gate resistor or ESD protection circuitry. External gate series resistance (typically 5–22 Ω) is required for controlled switching and ringing suppression, and system-level ESD protection must be implemented externally per ISO 10605 requirements for automotive applications.
Can BUK962R5-60E be used in synchronous rectification topologies?
Yes - its source-drain diode has 53 ns reverse recovery time and 98 nC recovered charge, verified per Figure 16 and Table 10. Combined with low RDS(on), it supports efficient synchronous rectification in 12 V DC-DC converters and bidirectional motor drives where body diode conduction occurs during dead-time.
BUK962R5-60E,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 357W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK962R5-60E,118 FAQ
1.How can I place an order for BUK962R5-60E,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK962R5-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of BUK962R5-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK962R5-60E,118 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK962R5-60E,118?
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6.How does Aetrix verify that BUK962R5-60E,118 is sourced from the original manufacturer or authorized distributors?
All BUK962R5-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK962R5-60E,118 meets industry standards.
7.What is the process for return or replacement of BUK962R5-60E,118?
All BUK962R5-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK962R5-60E,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK962R5-60E,118 part is unused and in its original packaging.
Return procedure for BUK962R5-60E,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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