Nexperia USA Inc. BUK962R8-60E,118

Overview

BUK962R8-60E from Nexperia is a logic-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 60 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and R_DS(on) = 2.29 mΩ (typ.) at V_GS = 5 V and T_j = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching including start-stop micro-hybrid systems.

For engineers reviewing the BUK962R8-60E datasheet, BUK962R8-60E pinout, BUK962R8-60E application, or BUK962R8-60E equivalent, this page delivers verified thermal resistance (R_th(j-mb) = 0.46 K/W), avalanche energy rating (519 mJ), gate charge profile (Q_G(tot) = 96 nC), and mounting-base–limited current derating curves - all critical for thermally constrained 12 V automotive power stages.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance with true logic-level gate drive compatibility (V_GS(th) > 0.5 V at T_j = 175 °C). Its integrated source-drain diode supports freewheeling in inductive loads, and its repetitive avalanche rating enables robust operation under transient overvoltage conditions without external snubbers.

The device features a thermally optimized D2PAK package with the mounting base electrically connected to the drain, enabling direct heatsinking while maintaining low junction-to-mounting-base thermal resistance (0.46 K/W). Gate charge parameters (Q_GD = 28.6 nC, Q_GS = 27.8 nC) support fast, controlled switching in high-frequency PWM applications up to 100 kHz.

Key Specifications

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Compared with STL220N6F7 and IRFB4115PBF, BUK962R8-60E uniquely combines AEC-Q101 qualification, true 5 V logic-level drive, 0.46 K/W thermal resistance, and 519 mJ avalanche energy - making it the only option qualified for thermally aggressive, safety-critical automotive power stages requiring no gate-level translation.

Availability

BUK962R8-60E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control modules, and engine cooling fan drivers requiring stable component supply and long-term lifecycle continuity.

Supply support for BUK962R8-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with deep expertise in automotive-qualified power MOSFETs and ESD protection solutions.

This device belongs to Nexperia's TrenchMOS automotive logic-level FET product line, engineered specifically for high-current, high-temperature 12 V power distribution and motor control in modern vehicles.

FAQ

Is BUK962R8-60E suitable for high-side switching in 12 V automotive applications?

Yes - its 60 V V_DS rating and 175 °C junction temperature support high-side configuration in 12 V systems. However, a gate driver capable of level-shifting above the source potential (e.g., bootstrap or isolated driver) is required to maintain V_GS ≥ 5 V during conduction. The mounting base must be electrically isolated from chassis ground when used in high-side layout.

What is the maximum allowable mounting base temperature for continuous 120 A operation?

Continuous 120 A operation is only permissible at T_mb = 25 °C, as shown in Figure 2 of the datasheet. At T_mb = 100 °C, the rated continuous current drops to 120 A due to thermal limits - but actual usable current is lower; derating follows the normalized curve in Figure 1, reaching ~60 A at T_mb = 100 °C.

Does BUK962R8-60E include an integrated body diode, and what are its recovery characteristics?

Yes - it features an integrated source-drain diode with typical V_SD = 0.77 V at I_S = 25 A and T_j = 25 °C. Its reverse recovery time (t_rr) is 45 ns and recovered charge (Q_r) is 74 nC, enabling use in freewheeling and synchronous rectification without excessive switching loss or voltage overshoot.

How does the mounting base connection affect PCB layout and thermal design?

The mounting base is electrically connected to the drain, so PCB copper pour or heatsink must be isolated from other potentials unless drain-referenced. For optimal thermal performance, a minimum 10 cm² 2-oz copper area with thermal vias to inner layers is recommended. Mechanical mounting torque must not exceed 0.5 N·m to avoid die stress or solder joint fracture.