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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BUK9635-55,118

Name: BUK9635-55,118
Brand: NXP Semiconductors
SKU: BUK9635-55,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK9635-55,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUK9635-55,118.pdf

Description:: MOSFET N-CH 55V 34A D2PAK

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Product details

Overview

BUK9635-55,118 from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode logic-level TrenchMOS power transistor in SOT404 (TO-263) package, rated for 55 V drain-source voltage, 34 A DC drain current at 25 °C, 35 mΩ R_DS(ON) at V_GS = 5 V, and 85 W total power dissipation. It integrates ESD protection up to 2 kV and is designed for automotive and industrial switching applications requiring robust gate drive compatibility with 5 V microcontrollers.

For engineers reviewing the BUK9635-55,118 datasheet, BUK9635-55,118 pinout, BUK9635-55,118 application, or BUK9635-55,118 equivalent, key selection criteria include its logic-level gate threshold (1–2 V), low on-resistance at 5 V drive, thermal resistance junction-to-mounting-base (max 1.75 K/W), avalanche energy rating (45 mJ), and integrated reverse diode characteristics (V_SD = 0.95–1.2 V at 25 A).

Technical Context

The BUK9635-55,118 employs trench-gate MOSFET technology to achieve low R_DS(ON) while maintaining stable gate threshold across temperature (0.5–2.3 V). Its internal structure includes a monolithic source-drain diode with 40 ns reverse recovery time and 0.16 µC Q_rr, enabling efficient freewheeling in inductive loads.

It operates within a junction temperature range of –55 °C to 175 °C and supports pulsed drain currents up to 136 A. The device's safe operating area (SOA) is defined for unclamped inductive switching with specified gate resistance (R_GS = 50 Ω) and gate drive (V_GS = 5 V), confirming suitability for automotive load-switching and motor control circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum continuous drain-source blocking voltage; defines maximum supply rail compatibility in 48 V automotive systems.
I_D (DC)	34 A at T_mb = 25 °C - Continuous current capability with heatsink; derates to 24 A at 100 °C mounting base temperature.
R_DS(ON)	35 mΩ max at V_GS = 5 V, I_D = 17 A - Ensures <1.8 W conduction loss at 30 A, enabling high-efficiency low-voltage switching.
E_AS	45 mJ non-repetitive unclamped inductive energy - Supports reliable turn-off under inductive kickback without external snubbers in relay or solenoid drivers.
V_GS(th)	1.0–2.0 V typical at 25 °C - Fully enhances with standard 3.3 V or 5 V logic outputs; eliminates need for gate boosters.
C_iss	1050–1400 pF - Determines gate drive strength requirement; compatible with standard 1 A peak gate drivers at ≤100 kHz switching.
T_j max	175 °C - Enables operation in under-hood automotive environments with minimal thermal margin compromise.

Pinout & Package

Package: SOT404 (TO-263), surface-mount, isolated mounting base (pin 4/mb connected to drain); net mass 1.4 g; UL94 V0 epoxy.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Logic-level compatible; requires <1 µA leakage at ±5 V; sensitive to ESD (2 kV HBM).
2 (Drain)	High-side power path	Connected internally to mounting base (mb); primary heat transfer path to PCB copper pour or heatsink.
3 (Source)	Power return reference	Low-inductance source path (L_s = 7.5 nH); referenced to driver ground; carries full load current.
mb (Mounting Base)	Drain thermal & electrical node	Electrically tied to pin 2; must be soldered to large copper area for thermal management and EMI reduction.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V MCU GPIOs-no level-shifting required in battery-powered or automotive body-control modules.
Integrated ESD protection	2 kV Human Body Model rating on all pins-reduces need for external TVS in cost-sensitive automotive interior modules.
TrenchMOS architecture	Delivers 35 mΩ R_DS(ON) at 5 V drive-enables lower conduction losses than planar MOSFETs in 12–48 V DC-DC and load-switch designs.
Monolithic body diode	40 ns t_rr, 0.16 µC Q_rr-supports synchronous rectification and flyback recovery in brushed DC motor drivers without external diodes.
High avalanche ruggedness	45 mJ unclamped inductive energy rating-ensures single-pulse survivability during relay coil de-energization or solenoid actuation transients.

Applications

Automotive Body Control Module	Industrial PLC Output Stage
Use Scenario: Switching 12 V/24 V lighting, HVAC actuators, and door locks in vehicle BCMs. IC Role / Device Role / Timing Role: High-side load switch controlled by 5 V microcontroller PWM output. Use Value: Low R_DS(ON) minimizes self-heating during continuous duty; logic-level gate enables direct MCU interface without discrete level shifters.	Use Scenario: Driving 24 V solenoids and indicator lamps in programmable logic controller output cards. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in DIN-rail mounted industrial controllers. Use Value: 136 A pulse rating and 45 mJ avalanche energy withstand inductive kickback without snubber networks, reducing BOM count and board space.
48 V Mild Hybrid DC-DC Converter	Brushed DC Motor Driver
Use Scenario: High-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: Power switch in buck-boost topology with gate driven by dedicated gate driver IC. Use Value: 55 V V_DS rating provides 20 % margin over 48 V nominal bus; low C_iss enables efficient 100–200 kHz switching with moderate gate drive power.	Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor control for power tools and medical pumps. IC Role / Device Role / Timing Role: Unidirectional power stage switch with integrated body diode providing freewheeling path. Use Value: 0.95 V V_SD forward drop at 25 A reduces freewheeling losses vs. external Schottky diodes; 40 ns t_rr limits switching loss during commutation.

Automotive Body Control Module

Industrial PLC Output Stage

Use Scenario: Switching 12 V/24 V lighting, HVAC actuators, and door locks in vehicle BCMs.

IC Role / Device Role / Timing Role: High-side load switch controlled by 5 V microcontroller PWM output.

Use Value: Low R_DS(ON) minimizes self-heating during continuous duty; logic-level gate enables direct MCU interface without discrete level shifters.

Use Scenario: Driving 24 V solenoids and indicator lamps in programmable logic controller output cards.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in DIN-rail mounted industrial controllers.

Use Value: 136 A pulse rating and 45 mJ avalanche energy withstand inductive kickback without snubber networks, reducing BOM count and board space.

48 V Mild Hybrid DC-DC Converter

Brushed DC Motor Driver

Use Scenario: High-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Power switch in buck-boost topology with gate driven by dedicated gate driver IC.

Use Value: 55 V V_DS rating provides 20 % margin over 48 V nominal bus; low C_iss enables efficient 100–200 kHz switching with moderate gate drive power.

Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor control for power tools and medical pumps.

IC Role / Device Role / Timing Role: Unidirectional power stage switch with integrated body diode providing freewheeling path.

Use Value: 0.95 V V_SD forward drop at 25 A reduces freewheeling losses vs. external Schottky diodes; 40 ns t_rr limits switching loss during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF06L	60 V V_DS, 36 A I_D, 28 mΩ R_DS(ON) @ 5 V, TO-220 package	Higher voltage rating but through-hole only; lacks integrated ESD protection (requires external TVS)	Preferred where higher voltage margin is critical and PCB layout allows through-hole mounting.
IRF3205PBF	55 V V_DS, 110 A I_D, 8.0 mΩ R_DS(ON) @ 10 V, TO-220 package	Requires 10 V gate drive; not logic-level; no ESD rating specified; higher conduction efficiency but incompatible with 3.3 V control	Selected when gate drive can supply ≥10 V and lowest possible R_DS(ON) is prioritized over logic compatibility.

Compared with STP36NF06L and IRF3205PBF, the BUK9635-55,118 uniquely combines logic-level drive, integrated 2 kV ESD protection, and surface-mount SOT404 packaging-making it optimal for space-constrained, 5 V-controlled automotive modules where reliability and assembly efficiency are critical.

Availability

BUK9635-55,118 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, 48 V mild hybrid DC-DC converters, and brushed DC motor drivers requiring stable component supply and long-term production continuity.

Supply support for BUK9635-55,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with origins in Philips' semiconductor division.

The BUK9635-55,118 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for automotive-grade load switching and industrial control where robustness, low gate drive voltage, and high reliability under thermal stress are mandatory.

FAQ

What is the maximum continuous drain current for BUK9635-55,118 at 100 °C mounting base temperature?

The BUK9635-55,118 supports 24 A DC drain current at T_mb = 100 °C, per its limiting values table. This derating reflects thermal constraints of the SOT404 package and ensures safe operation without exceeding the 175 °C maximum junction temperature. At 25 °C mounting base, the rating is 34 A. Designers must verify PCB copper area and airflow to maintain T_mb within spec for the intended load profile.

Does BUK9635-55,118 require an external gate resistor for typical 5 V MCU drive?

While the BUK9635-55,118 can be driven directly by a 5 V MCU GPIO, a small series gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current during fast transitions. The datasheet specifies dynamic timing parameters (e.g., t_d(on), t_r) using R_G = 10 Ω, confirming this value as a validated design point for stable switching behavior without oscillation.

Is the mounting base (mb) of BUK9635-55,118 electrically isolated from other pins?

No-the mounting base (mb) of the BUK9635-55,118 is electrically connected to pin 2 (drain), as confirmed by the pinning diagram and mechanical data. This configuration makes the SOT404 package a drain-isolated variant, requiring the mounting pad to be routed to the high-side power net and thermally coupled to a heatsink or large copper pour. Isolation is not provided; careful PCB layout is essential to avoid shorting.

What is the reverse diode forward voltage of BUK9635-55,118 at 34 A?

The reverse diode (body diode) forward voltage of the BUK9635-55,118 is 1.0 V maximum at I_F = 34 A and V_GS = 0 V, per the "Reverse Diode Characteristics" section. This value is measured under zero gate bias and reflects the intrinsic parasitic diode performance-critical for freewheeling path loss estimation in half-bridge or high-side switch topologies where the diode conducts during dead-time.

Can BUK9635-55,118 be used in linear (analog) regulation mode?

The BUK9635-55,118 is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) graph is limited to pulsed conditions, and no continuous linear derating curves are provided. Using it in analog regulation risks thermal runaway due to positive temperature coefficient of R_DS(ON) and insufficient SOA margin-designers should select purpose-built linear MOSFETs or bipolar transistors instead.

BUK9635-55,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 17A, 5V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BUK9635-55,118 FAQ

1.How can I place an order for BUK9635-55,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9635-55,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9635-55,118 reliable?

The price and inventory of BUK9635-55,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9635-55,118 is usually 5 days.

3.What payment methods are accepted for BUK9635-55,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9635-55,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9635-55,118?

BUK9635-55,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9635-55,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9635-55,118?

For technical support, including BUK9635-55,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9635-55,118 requirements.

6.How does Aetrix verify that BUK9635-55,118 is sourced from the original manufacturer or authorized distributors?

All BUK9635-55,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9635-55,118 meets industry standards.

7.What is the process for return or replacement of BUK9635-55,118?

All BUK9635-55,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9635-55,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9635-55,118 part is unused and in its original packaging.

Return procedure for BUK9635-55,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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