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Nexperia USA Inc. BUK9635-55A,118

Part No.:
BUK9635-55A,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK9635-55A,118.pdf
Description:
MOSFET N-CH 55V 34A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,281

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Product details

Overview

BUK9635-55A,118 from Nexperia is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for automotive-critical power switching with 55 V VDS, 34 A continuous drain current at Tmb = 25 °C, and RDS(on) of 24 mΩ @ VGS = 10 V / ID = 25 A / Tj = 25 °C. It supports high-reliability engine control, battery disconnect, and HVAC blower drives.

For engineers reviewing the BUK9635-55A,118 datasheet, BUK9635-55A,118 pinout, BUK9635-55A,118 application, or BUK9635-55A,118 equivalent, this device delivers AEC-Q101 qualified ruggedness, low-conduction-loss switching at 5 V gate drive, and validated avalanche energy handling (49 mJ) for unclamped inductive loads in automotive subsystems.

Technical Context

This FET uses TrenchMOS technology to achieve low RDS(on) and fast switching with td(on) = 6 ns, tr = 36 ns, td(off) = 96 ns, and tf = 73 ns under standard test conditions (VDS = 30 V, RL = 1.2 Ω, VGS = 5 V, RG(ext) = 10 Ω). Its gate threshold voltage ranges from 0.5 V (Tj = 175 °C) to 2.3 V (Tj = −55 °C), enabling robust turn-on across full automotive temperature range.

Thermal design is supported by Rth(j-mb) = 1.8 K/W junction-to-mounting-base resistance and normalized power derating down to 0% at Tmb = 200 °C. The mounting base is internally connected to the drain, enabling direct heatsink attachment for high-power dissipation up to 85 W at Tmb = 25 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - Maximum drain-source blocking voltage compatible with 42 V automotive systems and transient clamping up to ISO 7637-2 Pulse 5a.
ID (continuous) 34 A @ Tmb = 25 °C - Sustains high-current motor and solenoid loads without external forced cooling.
RDS(on) 24 mΩ @ VGS = 10 V / ID = 25 A / Tj = 25 °C - Minimizes conduction loss (Pcond ≈ 21 W at 34 A), reducing thermal stress in compact modules.
EAS 49 mJ (unclamped) - Withstands single-pulse inductive energy from 14 A load current, supporting reliable operation in relay replacement and actuator circuits.
VGS(th) 1.0–2.0 V @ Tj = 25 °C - Ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO, eliminating need for gate drivers in many applications.
Ciss 880–1173 pF - Enables predictable gate drive sizing and low EMI during hard-switching in 100 kHz–500 kHz PWM circuits.
Rth(j-mb) 1.8 K/W - Allows direct mounting to aluminum heatsinks for efficient thermal management in space-constrained ECUs.

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain terminal for low-inductance, high-current thermal path.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control input requiring ≤100 nA leakage at ±10 V; driven directly by MCU GPIO or low-power gate driver.
2 (D) Drain Main high-side or low-side power path; electrically tied to mounting base for direct heatsink coupling and minimized thermal resistance.
3 (S) Source Power return node; internal source bond pad inductance is 7.5 nH, critical for minimizing switching overshoot in high-dI/dt applications.
Mounting Base (mb) Drain (common) Exposed copper pad on underside; must be soldered to PCB copper pour or heatsink to achieve rated Rth(j-mb) = 1.8 K/W.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive safety-critical functions including engine management, transmission control, and ADAS power stages.
Logic-level gate drive Guaranteed turn-on at VGS ≥ 4.5 V, enabling direct interface with 3.3 V/5 V MCUs without level-shifting or external drivers.
Low RDS(on) at 5 V 26.5 mΩ typical @ VGS = 4.5 V / ID = 25 A / Tj = 25 °C - Reduces conduction loss by >30% vs. standard MOSFETs at same gate voltage.
High avalanche ruggedness 49 mJ non-repetitive EAS - Supports robust operation in unclamped inductive switching (e.g., fuel injectors, fan motors) without snubbers.
Optimized thermal path 1.8 K/W Rth(j-mb) enables 85 W power dissipation at Tmb = 25 °C - Suitable for thermally demanding under-hood environments.

Applications

Engine Control Unit (ECU) Load Switch Automotive HVAC Blower Driver

Use Scenario: High-side switching of fuel injector or ignition coil in gasoline/diesel engine control units.

IC Role / Device Role / Timing Role: Power switch controlling 12–42 V inductive loads with precise 1–10 ms pulse-width modulation.

Use Value: 49 mJ avalanche rating prevents failure during coil flyback transients; 24 mΩ RDS(on) limits self-heating during extended duty cycles.

Use Scenario: Low-side PWM control of 12 V/24 V HVAC blower motor in passenger cabin climate systems.

IC Role / Device Role / Timing Role: Fast-switching power stage operating at 20–100 kHz with <100 ns fall time to minimize audible noise and torque ripple.

Use Value: 73 ns tf and 111–152 pF Crss reduce switching losses and EMI; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime.

Battery Disconnect Unit (BDU) Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Isolation of 12 V/48 V battery banks during fault conditions or key-off state in 12/48 V dual-voltage architectures.

IC Role / Device Role / Timing Role: High-current bidirectional switch (with external diode) handling up to 34 A continuous and 133 A pulsed currents.

Use Value: 133 A IDM peak rating supports short-circuit withstand; mounting base connection enables direct heatsink integration for sustained fault-current handling.

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter, switching at 10–20 kHz with high dI/dt demands.

IC Role / Device Role / Timing Role: Low-side switch with 7.5 nH internal source inductance to minimize voltage spikes during 100 A/µs transitions.

Use Value: 2.5 nH internal drain inductance (from mounting base edge) and low Coss (165–198 pF) improve commutation efficiency and reduce shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N5LF8AG 60 V VDS, 220 A ID (Tc = 25 °C), RDS(on) = 1.8 mΩ @ 10 V - larger die, higher current, TO-263 package. Targeted at high-power traction inverters; not AEC-Q101 qualified; requires gate driver due to higher QG. Select when >100 A continuous current is required and AEC-Q101 is not mandatory; avoid for space-constrained ECU designs.
IRF1405PBF 55 V VDS, 169 A ID, RDS(on) = 5.3 mΩ @ 10 V - legacy planar MOSFET, no AEC-Q101 qualification, higher RDS(on) at 5 V. General-purpose industrial switching; lacks automotive thermal cycling validation and avalanche testing. Acceptable for non-automotive 12 V systems where cost is primary; unsuitable for safety-critical or high-temperature under-hood use.

Compared with STL220N5LF8AG and IRF1405PBF, the BUK9635-55A,118 uniquely balances AEC-Q101 compliance, 5 V logic-level drive, 24 mΩ RDS(on), and D2PAK thermal performance-making it optimal for mid-power automotive modules where qualification, size, and gate-drive simplicity are jointly critical.

Availability

BUK9635-55A,118 is available at Aetrix Electronics and suitable for automotive engine control, HVAC blower drives, and battery disconnect units requiring stable component supply across long production lifecycles and stringent quality traceability.

Supply support for BUK9635-55A,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

The BUK9635-55A,118 belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for robust, low-loss switching in engine management, body electronics, and ADAS subsystems.

FAQ

Is BUK9635-55A,118 suitable for high-side switching configurations?

Yes - its 55 V VDS rating and 10 V maximum VGS allow safe operation in high-side configurations with appropriate gate-driving circuitry. The mounting base is internally connected to the drain, so PCB layout must isolate the base from source-referenced ground planes. For floating gate drive, a bootstrap or isolated DC-DC solution is required to maintain VGS ≥ 4.5 V during conduction.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum VGS is ±10 V for continuous operation, with a pulsed peak rating of ±15 V (tp ≤ 50 µs). Exceeding ±10 V continuously risks gate oxide degradation; transient spikes above +15 V or below −15 V may cause irreversible damage. Use Zener clamps (e.g., 9.1 V) between gate and source if driving from noisy or inductive sources.

How does RDS(on) change with junction temperature?

RDS(on) increases linearly with Tj: at VGS = 5 V and ID = 25 A, it rises from 26 mΩ at 25 °C to 70 mΩ at 175 °C. This 169% increase must be factored into thermal design - worst-case conduction loss at hot junction exceeds 43 W, requiring adequate heatsinking or derating to maintain reliability.

Can BUK9635-55A,118 replace older BUK9535-55A in existing designs?

Yes - BUK9635-55A,118 is a direct functional and pin-compatible successor to BUK9535-55A, with identical D2PAK package, pinout, and electrical specifications. It features improved RDS(on) consistency and updated AEC-Q101 requalification per Rev. 2 (2011). No layout or firmware changes are needed for drop-in replacement.

BUK9635-55A,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
32mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
1173 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
85W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK9635-55A,118 FAQ

1.How can I place an order for BUK9635-55A,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9635-55A,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9635-55A,118 reliable?

The price and inventory of BUK9635-55A,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9635-55A,118 is usually 5 days.

3.What payment methods are accepted for BUK9635-55A,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9635-55A,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9635-55A,118?

BUK9635-55A,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9635-55A,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9635-55A,118?

For technical support, including BUK9635-55A,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9635-55A,118 requirements.

6.How does Aetrix verify that BUK9635-55A,118 is sourced from the original manufacturer or authorized distributors?

All BUK9635-55A,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9635-55A,118 meets industry standards.

7.What is the process for return or replacement of BUK9635-55A,118?

All BUK9635-55A,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9635-55A,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9635-55A,118 part is unused and in its original packaging.

Return procedure for BUK9635-55A,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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