Nexperia USA Inc. BUK9637-100E,118
- Part No.:
- BUK9637-100E,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUK9637-100E,118.pdf
- Description:
- MOSFET N-CH 100V 31A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:739
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Product details
Overview
BUK9637-100E from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS logic-level power MOSFET in SOT404 (D2PAK) package, rated for 100 V VDS, 31 A continuous drain current at Tmb = 25 °C, and 96 W total power dissipation. It delivers 31 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, with true logic-level gate drive (VGS(th) ≥ 0.5 V up to 175 °C), enabling direct interface with 3.3 V/5 V microcontrollers in automotive power switching.
For engineers reviewing the BUK9637-100E datasheet, BUK9637-100E pinout, BUK9637-100E application, or BUK9637-100E equivalent, key selection criteria include its 175 °C junction rating, repetitive avalanche capability, low RDS(on) at logic-level gate drive, and qualification for start-stop micro-hybrid and transmission control systems.
Technical Context
This MOSFET employs TrenchMOS technology to achieve high current density and low conduction losses while maintaining robust thermal performance. Its gate threshold voltage remains functional across the full -55 °C to +175 °C junction range, and it features a mounting base thermally and electrically connected to the drain-enabling efficient heat transfer to PCB copper or heatsink.
The device supports unclamped inductive switching with 44 mJ single-pulse avalanche energy (ID = 31 A, Vsup ≤ 100 V), and exhibits low dynamic parameters: QGD = 9.3 nC, Ciss = 2681 pF (typ), and tf = 35.1 ns-making it suitable for high-frequency PWM motor and solenoid control in 12 V/24 V/48 V automotive architectures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; supports 48 V automotive bus with margin for load dump transients. |
| ID (continuous) | 31 A at Tmb = 25 °C - Enables high-current switching without external heatsink in moderate-duty cycles. |
| RDS(on) | 31 mΩ typ at VGS = 5 V, ID = 10 A, Tj = 25 °C - Minimizes conduction loss (≤ 9.6 W at 17.5 A) in thermally constrained modules. |
| Tj max | 175 °C - Allows operation in under-hood environments where ambient exceeds 125 °C. |
| Avalanche energy | 44 mJ (non-repetitive, unclamped) - Withstands inductive kickback from motors/solenoids without external snubbers. |
| QGD | 9.3 nC - Low gate-drain charge reduces Miller-induced switching delay and improves turn-off controllability. |
| Rth(j-mb) | 1.56 K/W - Enables >60 W power handling with modest heatsinking via mounting base. |
Pinout & Package
SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically and thermally connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level input controlling channel conduction; requires ≤5 V for full enhancement; VGS(th) ≥ 0.5 V even at 175 °C. |
| 2 (D) | Drain | Main high-side power path; internally bonded to mounting base for low-inductance, high-current routing and thermal conduction. |
| 3 (S) | Source | Return path for load current; referenced to system ground; forms body diode anode with drain cathode. |
| mb | Mounting base | Electrically tied to drain; provides primary thermal interface to PCB copper pour or heatsink; critical for power derating. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC standard-suitable for safety-critical ECUs. |
| True logic-level gate | VGS(th) ≥ 0.5 V at Tj = 175 °C ensures turn-on compatibility with 3.3 V MCU GPIOs without level-shifting circuitry. |
| Repetitive avalanche rated | Rated for repeated inductive switching events under controlled conditions-reduces need for external protection components. |
| 175 °C junction rating | Enables placement in high-temperature zones (e.g., near engine bay electronics) without derating penalties below 150 °C ambient. |
| Low RDS(on) × QG product | 31 mΩ × 22.8 nC = 0.71 Ω·nC - Balances conduction and switching losses for high-efficiency 20–100 kHz PWM operation. |
Applications
| Start-Stop Micro-Hybrid Control | Transmission Solenoid Driver |
|---|---|
Use Scenario: Controlling starter motor engagement/disengagement during engine auto-stop and restart cycles in 12 V/48 V mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side power switch interfacing directly with 5 V microcontroller output; handles peak currents up to 123 A (pulsed). Use Value: Eliminates need for gate driver IC due to logic-level compatibility, reducing BOM count and PCB area while sustaining 175 °C junction temperature during repeated cranking events. | Use Scenario: Driving hydraulic solenoids in automatic transmission valve bodies requiring precise 12 V PWM current regulation. IC Role / Device Role / Timing Role: Low-loss, fast-switching power stage delivering 31 A continuous current with <35 ns fall time for accurate duty-cycle control. Use Value: Low RDS(on) minimizes self-heating during sustained actuation; avalanche ruggedness absorbs back-EMF without snubber networks. |
| 12 V/24 V Motor Control Module | LED Headlamp Power Switch |
Use Scenario: Bidirectional DC motor control in HVAC blower or power seat modules using half-bridge topology. IC Role / Device Role / Timing Role: Low-side or high-side switch in discrete H-bridge; leverages 1.56 K/W Rth(j-mb) for thermal management on 2 oz copper PCB. Use Value: Mounting base connection enables direct thermal coupling to chassis ground plane, supporting >25 A RMS current in compact form factor. | Use Scenario: High-current on/off switching of LED headlamp arrays (e.g., adaptive driving beam segments) in ADB modules. IC Role / Device Role / Timing Role: Primary power switch handling up to 31 A inrush and steady-state current; operates with 5 V MCU control signal. Use Value: True logic-level gate ensures reliable turn-on at cold start (-40 °C) and hot soak (175 °C), eliminating gate driver dependency and improving system startup timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, 3.2 mΩ RDS(on) at VGS = 10 V; requires 10 V gate drive for full enhancement. | Higher current capacity but not logic-level; needs gate driver for 3.3 V/5 V MCU interface. | Select when higher current and lower RDS(on) justify added gate driver complexity and cost. |
| IRF3205PBF | 55 V, 110 A, 8 mΩ RDS(on) at VGS = 10 V; non-AEC-Q101; no avalanche rating. | Limited to 55 V systems; unsuitable for 48 V automotive or load-dump tolerant designs. | Consider only for non-automotive industrial 12 V/24 V applications where qualification and ruggedness are not required. |
Compared with STL220N10F7 and IRF3205PBF, BUK9637-100E uniquely combines AEC-Q101 qualification, true 5 V logic-level drive, 100 V rating, and repetitive avalanche capability-making it the only drop-in solution for space-constrained, thermally demanding automotive power switches without gate drivers.
Availability
BUK9637-100E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control units, and LED headlamp power modules requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for BUK9637-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The BUK9637-100E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for thermally aggressive, safety-critical vehicle subsystems requiring robust switching, low gate-drive voltage, and extended temperature operation.
FAQ
Is BUK9637-100E compatible with 3.3 V microcontroller GPIOs?
Yes. Its gate-source threshold voltage is guaranteed ≥0.5 V at 175 °C junction temperature, and typical RDS(on) is 31 mΩ at VGS = 5 V-ensuring full enhancement with 3.3 V logic when used with appropriate gate resistor and layout. At 3.3 V, RDS(on) increases to ~65 mΩ (per Fig. 7), which remains usable for moderate-current applications.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 2 in the datasheet, the continuous drain current is derated to 22 A at Tmb = 100 °C. This reflects thermal limits imposed by the 1.56 K/W junction-to-mounting-base resistance and 96 W Ptot rating at 25 °C.
Does BUK9637-100E have an integrated body diode, and what are its characteristics?
Yes. It features a source-drain body diode with forward voltage VSD = 0.82–1.2 V at IS = 10 A and Tj = 25 °C, reverse recovery time trr = 39.8 ns, and recovered charge Qr = 70.6 nC. These values support fast freewheeling in inductive loads like solenoids and motors.
Can BUK9637-100E be used in parallel configurations?
Yes, but with design precautions. Its positive RDS(on) temperature coefficient promotes current sharing, yet matching gate drive impedance and thermal coupling across paralleled devices is essential. Layout symmetry and individual gate resistors are recommended to avoid oscillation and uneven current distribution.
BUK9637-100E,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 36mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.8 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2681 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 96W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
BUK9637-100E,118 FAQ
1.How can I place an order for BUK9637-100E,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9637-100E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BUK9637-100E,118 is sourced from the original manufacturer or authorized distributors?
All BUK9637-100E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9637-100E,118 meets industry standards.
7.What is the process for return or replacement of BUK9637-100E,118?
All BUK9637-100E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9637-100E,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9637-100E,118 part is unused and in its original packaging.
Return procedure for BUK9637-100E,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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