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Nexperia USA Inc. BUK963R1-40E,118

Part No.:
BUK963R1-40E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK963R1-40E,118.pdf
Description:
MOSFET N-CH 40V 100A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:8,421

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Product details

Overview

BUK963R1-40E from Nexperia is a logic-level N-channel TrenchMOS power MOSFET in SOT404 (D2PAK) package, rated for 40 V VDS, 100 A continuous drain current at Tmb = 25 °C, and 234 W total power dissipation. It features 2.6 mΩ typical RDS(on) at VGS = 5 V and Tj = 25 °C, true logic-level gate drive with VGS(th) ≥ 0.5 V at 175 °C, and AEC-Q101 qualification for automotive use.

For engineers reviewing the BUK963R1-40E datasheet, BUK963R1-40E pinout, BUK963R1-40E application, or BUK963R1-40E equivalent, this device is selected for high-current, thermally demanding 12 V automotive switching-especially where low gate drive voltage (5 V), repetitive avalanche capability, and 175 °C junction operation are required.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 69.5 nC, QGD = 25.8 nC). Its internal mounting base is electrically connected to the drain, enabling direct thermal coupling to heatsinks while defining a fixed high-side reference for layout.

The device supports unclamped inductive switching with 419 mJ single-pulse avalanche energy (ID = 100 A, Vsup ≤ 40 V), and maintains stable RDS(on) up to 175 °C (max 6 mΩ at Tj = 175 °C, VGS = 5 V, ID = 25 A), making it suitable for start-stop micro-hybrid and transmission control systems with transient thermal stress.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum drain-source blocking voltage; defines compatibility with 12 V automotive battery systems including load dump transients.
ID (continuous) 100 A at Tmb = 25 °C - Package-limited current capacity; requires robust PCB copper or external heatsink for sustained operation.
RDS(on) 2.6 mΩ typ @ VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 20 A, critical for efficiency in high-duty-cycle solenoid/motor drivers.
QGD 25.8 nC - Gate-drain charge directly impacts switching loss and Miller-induced turn-off delay; optimized for 5 V logic-level drive stability.
Tj max 175 °C - Junction temperature rating enables operation in under-hood environments without derating below ambient extremes.
EAS 419 mJ - Non-repetitive avalanche energy supports reliable inductive load switching without external snubbers in transmission valve control.
Rth(j-mb) 0.64 K/W - Thermal resistance from junction to mounting base; enables >300 W theoretical dissipation with 200 K/W heatsink (ΔT = 128 K).

Pinout & Package

SOT404 (D2PAK) plastic surface-mount package with 3 leads (one cropped), featuring an exposed metal mounting base electrically tied to the drain terminal for low-inductance, high-current routing and direct thermal path to heatsink.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Logic-level control input; threshold voltage ≥0.5 V at 175 °C ensures reliable turn-on with standard 5 V microcontroller outputs.
2 (D) Drain Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current return path and thermal conduction.
3 (S) Source Power return node; referenced to system ground in low-side switch configurations; source inductance LS = 7.5 nH affects switching ringing.
Mounting Base (mb) Drain (electrically connected) Primary thermal interface and mechanical anchor; must be soldered to large copper pour or heatsink for rated power handling.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability across temperature cycling, humidity, and mechanical shock per JESD47.
Repetitive avalanche rated Rated for repeated inductive switching events without degradation-critical for solenoid and motor phase control.
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures guaranteed turn-on margin with 5 V MCU I/O even at maximum junction temperature.
175 °C junction rating Enables uninterrupted operation in engine bay locations where ambient exceeds 125 °C, eliminating need for thermal throttling.
Low QGD/QG ratio QGD = 25.8 nC / QG(tot) = 69.5 nC ≈ 37% - Reduces Miller plateau duration and improves EMI behavior during hard-switching.

Applications

Engine Start-Stop Control Transmission Solenoid Driver

Use Scenario: High-current switching of starter motor engagement/disengagement in micro-hybrid vehicles during frequent engine restarts.

IC Role / Device Role / Timing Role: Low-side power switch controlling solenoid coil current (up to 100 A peak) with precise timing and fast turn-off to prevent coil saturation.

Use Value: 2.6 mΩ RDS(on) minimizes resistive heating during repeated 500 ms pulses; 175 °C rating prevents thermal shutdown during back-to-back cycles.

Use Scenario: Driving hydraulic pressure control solenoids in automatic transmissions requiring precise current regulation and fast response.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability power stage delivering regulated 12 V/20–40 A pulses with sub-100 ns fall time for accurate pressure modulation.

Use Value: 76 ns fall time and 40 ns reverse recovery enable clean PWM edges; avalanche ruggedness absorbs inductive kickback without clamping diodes.

12 V Battery Load Switch Electric Power Steering (EPS) Motor Phase

Use Scenario: Main battery disconnect switch protecting downstream ECUs from overcurrent, short-circuit, and reverse polarity events.

IC Role / Device Role / Timing Role: High-side or low-side protection FET with integrated current sensing and fast fault response (<1 µs overcurrent detection compatible).

Use Value: 40 V VDS withstands ISO 7637-2 pulse 5a (load dump); 100 A rating supports >5 kW peak load shedding in safety-critical modules.

Use Scenario: Inverter half-bridge leg in 12 V EPS motor drives, handling bidirectional current during torque assist and regenerative braking phases.

IC Role / Device Role / Timing Role: Power switching element in three-phase inverter topology, operating with 10–20 kHz PWM and high dv/dt immunity.

Use Value: 0.64 K/W Rth(j-mb) enables stable 150 W continuous dissipation per device; source-drain diode VSD = 0.8 V aids freewheeling efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V, 220 A, RDS(on) = 1.4 mΩ @ 10 V; requires 10 V gate drive for full rating; not AEC-Q101 qualified. Better conduction loss at high VGS, but unsuitable for 5 V logic-only systems; lacks automotive qualification. Select only if gate drive is ≥10 V and automotive qualification is not required.
IRF1405PBF 55 V, 169 A, RDS(on) = 5.3 mΩ @ 10 V; no logic-level rating; TO-220 package; no AEC-Q101 qualification. Higher voltage margin but higher on-resistance and larger footprint; lacks thermal performance and automotive reliability validation. Use only for non-automotive 12–24 V industrial loads where 5 V drive and AEC-Q101 are unnecessary.

Compared with STL220N4F7AG and IRF1405PBF, the BUK963R1-40E uniquely delivers AEC-Q101 compliance, true 5 V logic-level operation, and 175 °C capability in a thermally optimized D2PAK package-making it the only choice for production automotive power switching where gate drive simplicity and under-hood reliability are mandatory.

Availability

BUK963R1-40E is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and electric power steering systems requiring stable component supply across extended product lifecycles.

Supply support for BUK963R1-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK963R1-40E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for thermally aggressive 12 V vehicle subsystems requiring zero-compromise reliability and simplified 5 V gate drive.

FAQ

Is BUK963R1-40E suitable for high-frequency PWM applications above 50 kHz?

Yes-its 76 ns fall time, 114 ns turn-off delay, and 25.8 nC QGD support efficient operation up to 100 kHz in hard-switched topologies. However, switching losses increase significantly above 50 kHz due to QG = 69.5 nC; gate driver strength ≥2 A peak is recommended for optimal efficiency.

What is the maximum allowable PCB copper area for thermal performance in SOT404?

For rated 234 W dissipation, Nexperia recommends ≥1000 mm² of 2 oz (70 µm) copper on both top and bottom layers, connected via ≥12 thermal vias (0.3 mm diameter) under the mounting base. Smaller areas reduce Ptot linearly per Fig. 2 in the datasheet.

Does the mounting base require electrical isolation from the heatsink?

No-the mounting base is electrically connected to the drain terminal. Heatsinks must be isolated or designed for high-side potential. Use electrically insulating thermal pads or ceramic washers if mounting to a grounded heatsink; failure to isolate risks short-circuiting the drain to ground.

Can BUK963R1-40E replace older BUK9615-40B in existing designs?

Yes-both share identical SOT404 package, 40 V rating, and AEC-Q101 qualification, but BUK963R1-40E offers 2.6 mΩ vs. 3.5 mΩ RDS(on), lower QGD, and improved 175 °C performance. Layout and gate drive remain compatible; verify thermal margin due to higher power density.

BUK963R1-40E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
69.5 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
9150 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
234W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK963R1-40E,118 FAQ

1.How can I place an order for BUK963R1-40E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK963R1-40E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK963R1-40E,118 reliable?

The price and inventory of BUK963R1-40E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK963R1-40E,118 is usually 5 days.

3.What payment methods are accepted for BUK963R1-40E,118?

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4.How is shipping managed for BUK963R1-40E,118?

BUK963R1-40E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK963R1-40E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK963R1-40E,118?

For technical support, including BUK963R1-40E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK963R1-40E,118 requirements.

6.How does Aetrix verify that BUK963R1-40E,118 is sourced from the original manufacturer or authorized distributors?

All BUK963R1-40E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK963R1-40E,118 meets industry standards.

7.What is the process for return or replacement of BUK963R1-40E,118?

All BUK963R1-40E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK963R1-40E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK963R1-40E,118 part is unused and in its original packaging.

Return procedure for BUK963R1-40E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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