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Nexperia USA Inc. BUK963R3-60E,118

Part No.:
BUK963R3-60E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK963R3-60E,118.pdf
Description:
MOSFET N-CH 60V 120A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,882

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Product details

Overview

BUK963R3-60E from Nexperia is a logic-level N-channel TrenchMOS power FET in SOT404 (D2PAK) package, rated for 60 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 2.73 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching in thermally demanding environments up to 175 °C junction temperature.

For engineers reviewing the BUK963R3-60E datasheet, BUK963R3-60E pinout, BUK963R3-60E application, or BUK963R3-60E equivalent, this device is selected for high-current, low-RDS(on) 12 V automotive loads where true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), repetitive avalanche capability, and mounting-base thermal management are critical.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 95 nC, QGD = 31 nC). Its gate threshold voltage remains functional across the full −55 °C to +175 °C junction range, enabling robust operation in engine bay and transmission control modules.

The device features an integrated source-drain diode with 43 ns reverse recovery time and 67 nC recovered charge, and its thermal resistance from junction to mounting base is 0.51 K/W - optimized for direct heatsink attachment via the exposed drain pad (mb).

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage compatible with 12 V automotive systems under load dump transients.
RDS(on) 2.73 mΩ (typ.) at VGS = 5 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 60 A, reducing heatsink requirements.
ID (cont.) 120 A at Tmb = 25 °C - Limited by package thermal capacity; derates to zero at Tmb ≈ 200 °C per Fig. 2.
Ptot 293 W at Tmb = 25 °C - High power handling enabled by low Rth(j-mb) = 0.51 K/W and copper D2PAK mounting base.
VGS(th) ≥ 0.5 V at Tj = 175 °C - Ensures reliable turn-on with standard 3.3 V/5 V microcontroller GPIO without level-shifting.
EAS 404 mJ (unclamped single-pulse) - Supports energy absorption during inductive load switching without external snubbers.
QGD 31 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency.

Pinout & Package

SOT404 (D2PAK) package with exposed drain mounting base (mb) for direct thermal interface. Three terminals: Gate (G), Drain (D), Source (S); mounting base electrically connected to drain.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Logic-level control input; requires ≤5 V for full enhancement; low input capacitance (Ciss = 10.1–13.5 nF) eases driver selection.
2 (D) Drain Main high-side power path; electrically tied to mounting base (mb) for low-inductance, high-current routing and thermal conduction.
3 (S) Source Power return node; internal source bonding provides low-inductance path (LS = 7.5 nH) for fast switching stability.
mb Mounting Base Exposed copper pad connected to drain; serves as primary thermal interface and current-carrying path - must be soldered to PCB copper pour or heatsink.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC-Q101 Rev D.
Repetitive avalanche rating Rated for repeated unclamped inductive switching events up to EAS = 404 mJ, eliminating need for external clamping in many solenoid/motor drives.
175 °C maximum junction temperature Enables operation in under-hood locations without derating for ambient temperature extremes.
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures gate turn-on margin even at peak temperature, supporting direct MCU drive.
Low Rth(j-mb) 0.51 K/W thermal resistance enables efficient heat transfer to heatsink or PCB, critical for sustained 100+ A operation.

Applications

Engine Start-Stop Control Transmission Solenoid Driver

Use Scenario: High-current switching of starter motor engagement solenoids and battery disconnect relays in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Main power switch controlling 12 V battery-to-starter path; handles 100–120 A pulses with <100 µs turn-on/off timing.

Use Value: Low RDS(on) reduces contactor coil heating and extends relay life; avalanche ruggedness absorbs back-EMF from solenoid de-energization.

Use Scenario: Precision PWM control of hydraulic pressure solenoids in automatic transmissions.

IC Role / Device Role / Timing Role: High-side switch driving inductive solenoid loads with 1–10 kHz switching frequency and tight duty-cycle resolution.

Use Value: Fast switching (tr = 100 ns, tf = 109 ns) and low QGD enable accurate current regulation; 175 °C rating supports placement near hot gearbox housing.

Electric Power Steering (EPS) Motor Phase Switch 12 V DC-DC Converter Primary Switch

Use Scenario: Half-bridge phase leg switching in brushless EPS motor inverters operating in confined, high-temperature chassis locations.

IC Role / Device Role / Timing Role: Low-side or high-side power FET in 3-phase inverter; conducts up to 80 A RMS with 20 kHz PWM.

Use Value: Low Coss (822–990 pF) and Crss (427–585 pF) minimize switching losses; Rth(j-mb) = 0.51 K/W allows direct heatsink mounting without thermal interface pads.

Use Scenario: Primary-side synchronous rectifier or high-side switch in 12 V input, 5–48 V output automotive DC-DC converters.

IC Role / Device Role / Timing Role: Hard-switched power FET operating at 200–500 kHz with 5 V gate drive from controller IC.

Use Value: Logic-level VGS(th) ensures full enhancement at 5 V; low QG(tot) = 95 nC reduces gate driver power consumption and improves efficiency at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power FET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 RDS(on) = 2.2 mΩ @ 10 V (vs. 2.73 mΩ @ 5 V); VGS(th) = 2.0–4.0 V - not logic-level; requires 10 V gate drive. Requires external gate driver for MCU compatibility; better conduction loss only when driven at 10 V. Select if system uses 10 V gate bias and prioritizes lowest RDS(on) over logic-level simplicity.
IRFB4115PBF RDS(on) = 3.2 mΩ @ 10 V; VGS(th) = 2.0–4.0 V; no AEC-Q101 qualification; Rth(j-mb) = 0.75 K/W. Lacks automotive qualification and thermal performance; higher conduction and switching losses at same current. Only suitable for non-automotive industrial use where qualification and thermal limits are not required.

Compared with STL220N6F7 and IRFB4115PBF, the BUK963R3-60E uniquely delivers logic-level gate compatibility, AEC-Q101 qualification, and superior thermal resistance (0.51 K/W) - making it the only choice for space-constrained, high-reliability 12 V automotive switching where MCU-direct drive and under-hood thermal resilience are mandatory.

Availability

BUK963R3-60E is available at Aetrix Electronics and suitable for engine start-stop systems, transmission control modules, and electric power steering units requiring stable component supply across extended automotive production lifecycles.

Supply support for BUK963R3-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

The BUK963R3-60E belongs to Nexperia's TrenchMOS automotive power FET product line, engineered specifically for high-current, high-temperature 12 V automotive power switching where AEC-Q101 compliance, thermal robustness, and logic-level gate drive are essential.

FAQ

Is the BUK963R3-60E pin-compatible with other D2PAK MOSFETs?

No - while the SOT404 (D2PAK) footprint is standardized, pin numbering and internal layout vary. BUK963R3-60E uses Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, with mounting base (mb) electrically tied to drain. Always verify pinout against the official Nexperia package drawing (sot404_po) before PCB layout.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is capped at 120 A regardless of mounting base temperature due to package limitation - but derating begins above 25 °C: at Tmb = 100 °C, ID is approximately 75 A (linear interpolation from Fig. 2 curve).

Does the BUK963R3-60E require a gate resistor for automotive PWM applications?

Yes - a gate resistor (typically 2.2–10 Ω) is required to control dV/dt and prevent oscillation, especially given its low QGD and high di/dt capability. The datasheet recommends RG(ext) = 5 Ω for switching time measurements (td(on), tr, etc.), and layout must minimize gate loop inductance.

Can the mounting base (mb) be left floating or insulated from the heatsink?

No - the mounting base is electrically connected to the drain terminal. Insulating it creates a hazardous floating high-voltage surface and blocks the primary thermal path. It must be soldered directly to a grounded copper pour or mounted to a heatsink using electrically conductive thermal interface material.

BUK963R3-60E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
13490 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
293W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK963R3-60E,118 FAQ

1.How can I place an order for BUK963R3-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK963R3-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK963R3-60E,118 reliable?

The price and inventory of BUK963R3-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK963R3-60E,118 is usually 5 days.

3.What payment methods are accepted for BUK963R3-60E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK963R3-60E,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK963R3-60E,118?

BUK963R3-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK963R3-60E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK963R3-60E,118?

For technical support, including BUK963R3-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK963R3-60E,118 requirements.

6.How does Aetrix verify that BUK963R3-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK963R3-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK963R3-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK963R3-60E,118?

All BUK963R3-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK963R3-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK963R3-60E,118 part is unused and in its original packaging.

Return procedure for BUK963R3-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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