Nexperia USA Inc. BUK964R1-40E,118

Overview

BUK964R1-40E from Nexperia is a logic-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 40 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 3.4 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching in thermally demanding environments up to 175 °C junction temperature.

For engineers reviewing the BUK964R1-40E datasheet, BUK964R1-40E pinout, BUK964R1-40E application, or BUK964R1-40E equivalent, key selection criteria include its true logic-level gate drive (V_GS(th) ≥ 0.5 V at 175 °C), repetitive avalanche rating, 0.82 K/W R_th(j-mb), and suitability for 12 V start-stop micro-hybrid systems requiring robust thermal performance and low conduction loss.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) with stable threshold voltage across temperature - V_GS(th) remains ≥0.5 V even at 175 °C, enabling reliable turn-on with standard 5 V logic drivers. Its D2PAK package features an exposed mounting base electrically connected to the drain, delivering low thermal resistance (0.82 K/W) and supporting high-power dissipation (182 W at T_mb = 25 °C).

The device supports ultra-high-performance switching with Q_GD = 18.8 nC, t_d(on) = 34 ns, and t_f = 60 ns under defined test conditions, while maintaining ruggedness via 302 mJ non-repetitive avalanche energy rating and compliance with IEC 60134 absolute maximum ratings.

Key Specifications

Pinout & Package

The BUK964R1-40E is housed in a plastic single-ended surface-mounted D2PAK (SOT404) package with three leads (one cropped) and an exposed metal mounting base electrically tied to the drain terminal. The package provides mechanical robustness and low thermal impedance for automotive under-hood applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N4F7AG and IRF1404ZLPbF, the BUK964R1-40E uniquely combines AEC-Q101 qualification, true 5 V logic-level operation, and D2PAK thermal performance - making it the only viable option for new 12 V automotive power modules requiring zero gate-drive overhead and high ambient temperature resilience.

Availability

BUK964R1-40E is available at Aetrix Electronics and suitable for engine start-stop control, transmission solenoid actuation, and 12 V battery load management requiring stable component supply across automotive production lifecycles.

Supply support for BUK964R1-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK964R1-40E belongs to Nexperia's TrenchMOS logic-level automotive power FET product line, engineered specifically for thermally aggressive 12 V vehicle subsystems requiring robust avalanche capability and extended temperature operation.

FAQ

Is BUK964R1-40E suitable for high-side switching configurations?

Yes - the SOT404 package isolates the source lead from the mounting base, enabling high-side switch implementation. Gate drive must reference the source potential, and the 0.5 V minimum V_GS(th) at 175 °C ensures reliable turn-on even under worst-case thermal conditions. Layout must minimize source inductance (L_S = 7.5 nH) to avoid oscillation.

What is the maximum allowable mounting base temperature for continuous 75 A operation?

Per Figure 2 in the datasheet, continuous 75 A operation is only permissible when the mounting base temperature (T_mb) is ≤25 °C. At T_mb = 100 °C, the rated continuous current drops to 75 A due to thermal derating - this reflects package-limited conduction, not silicon limitation. Derating curves are provided in Fig. 2.

Does BUK964R1-40E have integrated ESD protection on the gate?

No - the device does not include on-chip gate ESD protection diodes. External gate protection (e.g., 10 kΩ series resistor + 12 V Zener clamp to source) is required per application note AN10273 to prevent damage from human-body-model (HBM) or charged-device-model (CDM) events during handling or PCB assembly.

Can BUK964R1-40E replace older 40 V MOSFETs like IRF3205 in automotive upgrades?

Only with design validation - while both are 40 V N-channel FETs, the BUK964R1-40E has significantly lower R_DS(on) (3.4 mΩ vs. 8.0 mΩ), different gate charge profile (Q_GD = 18.8 nC), and AEC-Q101 qualification. Gate drive timing, PCB thermal layout, and avalanche behavior must be re-evaluated; direct drop-in replacement is not guaranteed.