NXP Semiconductors BUK964R2-55B/C

Overview

BUK964R2-55B from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in D2PAK (SOT404) package, rated for 55 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 3.5 mΩ typical R_DS(on) at V_GS = 5 V and T_j = 25 °C. It serves as a high-current, thermally robust switch in automotive 12 V/24 V load control circuits including solenoids, lamps, and motors.

For engineers reviewing the BUK964R2-55B datasheet, BUK964R2-55B pinout, BUK964R2-55B application, or BUK964R2-55B equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.1–2.0 V), 175 °C junction rating, avalanche ruggedness (1.2 J), low thermal resistance (R_th(j-mb) = 0.5 K/W), and automotive qualification per AEC-Q101.

Technical Context

This device uses TrenchMOS technology to achieve low on-state resistance while maintaining fast switching performance: Q_G(tot) = 95 nC and t_d(off) = 273 ns at V_DS = 30 V, enabling efficient operation in high-frequency PWM-controlled loads. Its gate threshold voltage (V_GS(th)) remains stable across temperature (0.5 V min at 175 °C), supporting reliable turn-on under hot-cranking conditions.

The integrated source-drain diode exhibits V_SD = 0.85 V typical at I_S = 40 A and T_j = 25 °C, with t_rr = 78 ns and Q_r = 171 nC - characteristics critical for freewheeling in inductive load switching. Mounting base (mb) is electrically connected to drain, requiring isolation-aware PCB layout.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N4LF6AG and IRF1404ZLPBF, the BUK964R2-55B uniquely combines 55 V rating, AEC-Q101 qualification, 175 °C operation, and true logic-level drive - making it the only viable option for automotive 24 V load switching where reliability, thermal margin, and gate drive simplicity are jointly required.

Availability

BUK964R2-55B is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V motor drives, and solenoid actuation systems requiring stable component supply across extended production lifecycles.

Supply support for BUK964R2-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK964R2-55B belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for robust, low-loss switching in harsh automotive environments including engine compartments and chassis electronics.

FAQ

What is the maximum continuous drain current for BUK964R2-55B at 100 °C mounting base temperature?

The BUK964R2-55B supports 75 A continuous drain current at T_mb = 100 °C under V_GS = 5 V conditions, as specified in Table 4 of the datasheet. This value is identical to its rating at 25 °C because current is package-limited rather than chip-limited at this temperature range. Derating begins above 100 °C per Figure 1.

Is BUK964R2-55B suitable for high-side switching configurations?

Yes, BUK964R2-55B is commonly used in high-side switching due to its logic-level gate threshold (1.1–2.0 V) and drain-connected mounting base. However, the mounting base must be electrically isolated from PCB ground, and gate drive must reference the source potential - typically requiring a charge pump or isolated gate driver for full enhancement in floating configurations.

Does BUK964R2-55B have built-in avalanche ruggedness, and what is its rated energy?

Yes, BUK964R2-55B is rated for unclamped inductive switching with E_AS = 1.2 J at I_D = 75 A, V_sup ≤55 V, R_GS = 50 Ω, and T_j(init) = 25 °C. This specification is confirmed in Table 1 and Table 4 of the datasheet and enables reliable operation in inductive load circuits without external snubbers.

What is the thermal resistance from junction to mounting base for BUK964R2-55B?

The maximum thermal resistance from junction to mounting base (R_th(j-mb)) for BUK964R2-55B is 0.5 K/W, as stated in Table 5. This low value results from the direct metal mounting base connection to the drain, enabling efficient heat transfer to an external heatsink when properly mounted with thermal interface material.

Can BUK964R2-55B be driven directly by a 3.3 V microcontroller GPIO?

Yes, BUK964R2-55B can be driven directly by a 3.3 V microcontroller GPIO because its gate threshold voltage V_GS(th) ranges from 1.1 V to 2.0 V at 25 °C, and its R_DS(on) remains low (4.4 mΩ max at V_GS = 4.5 V). Full enhancement is achieved with 3.3 V, though R_DS(on) will be slightly higher than at 5 V - verified in Figure 6 and Table 6.