Nexperia USA Inc. BUK964R2-80E,118

Overview

BUK964R2-80E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in SOT404 (D2PAK) package, rated for 80 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 3.4 mΩ typical R_DS(on) at V_GS = 5 V and T_j = 25 °C. It delivers ultra-low on-resistance for high-efficiency 12V/24V/48V automotive power switching in thermally demanding environments up to 175 °C junction temperature.

For engineers reviewing the BUK964R2-80E datasheet, BUK964R2-80E pinout, BUK964R2-80E application, or BUK964R2-80E equivalent, this device is selected for high-current, high-reliability automotive load control where true logic-level gate drive (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche capability, and mounting-base thermal performance are critical design requirements.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) while maintaining robust switching behavior and thermal stability across -55 °C to +175 °C operating range. Its gate threshold voltage remains functional at elevated temperatures, enabling reliable turn-on with standard 5 V microcontroller outputs without level-shifting.

The device features a thermally optimized D2PAK package with mounting base (mb) electrically connected to the drain, delivering 0.43 K/W junction-to-mounting-base thermal resistance. It supports unclamped inductive switching with 485 mJ non-repetitive avalanche energy rating under defined test conditions.

Key Specifications

Pinout & Package

Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level automotive MOSFET applications.

Compared with STL220N6F7 and IRF1405PBF, the BUK964R2-80E uniquely combines 80 V rating, true 5 V logic-level operation, AEC-Q101 qualification, and 175 °C thermal capability-making it the only viable option for next-generation 48 V automotive power switching where safety, efficiency, and space-constrained thermal management are co-primary constraints.

Availability

BUK964R2-80E is available at Aetrix Electronics and suitable for automotive power distribution, transmission control modules, and 48 V mild hybrid systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK964R2-80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This device belongs to Nexperia's TrenchMOS automotive logic-level power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine control units, ADAS power supplies, and electrified vehicle subsystems.

FAQ

Is BUK964R2-80E compatible with 3.3 V microcontroller GPIOs?

No. While it is a logic-level MOSFET, its minimum guaranteed V_GS(th) is 0.5 V at 175 °C - sufficient for 5 V drive but insufficient for reliable turn-on with 3.3 V outputs. At V_GS = 3.3 V, R_DS(on) increases significantly (≥12 mΩ at 25 °C), causing excessive conduction loss. A gate driver or level shifter is required for 3.3 V systems.

What is the maximum recommended PCB copper area for the mounting base?

Nexperia recommends a minimum 1000 mm² (e.g., 25 mm × 40 mm) of 2 oz copper on the top layer, directly soldered to the mounting base, with ≥4 thermal vias (0.5 mm diameter, spaced ≤2 mm apart) connecting to internal ground/power planes. This achieves near-datasheet R_th(j-mb) of 0.43 K/W and prevents thermal runaway at full 120 A rating.

Does BUK964R2-80E include integrated ESD protection?

No. The device has no built-in ESD protection circuitry beyond inherent MOSFET gate oxide robustness. Per datasheet Section 12.3, it is rated to HBM ±2 kV (Class C), which is insufficient for direct board-level handling. External TVS diodes or series resistors are required on gate traces in production environments to prevent electrostatic damage during assembly or field operation.

Can BUK964R2-80E replace BUZ72A in existing designs?

No. BUZ72A is a 55 V, 12 A TO-220 device with 0.2 Ω R_DS(on); BUK964R2-80E is an 80 V, 120 A SOT404 device with 3.4 mΩ R_DS(on). They differ in voltage rating, current capacity, package, thermal interface, and gate drive requirements. Direct replacement would require PCB redesign, gate driver revalidation, and thermal analysis - not a drop-in upgrade.