Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK964R4-40B,118

Part No.:
BUK964R4-40B,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK964R4-40B,118.pdf
Description:
MOSFET N-CH 40V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,266

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK964R4-40B,118 from Nexperia is an AEC-Q101 qualified logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, designed for automotive-critical 12 V power switching. It delivers 75 A continuous drain current at 5 V gate drive, features 3.9 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, supports 175 °C junction operation, and withstands 961 mJ unclamped avalanche energy - enabling robust control of motors, lamps, and solenoids in engine bays and body electronics.

For engineers reviewing the BUK964R4-40B,118 datasheet, BUK964R4-40B,118 pinout, BUK964R4-40B,118 application, or BUK964R4-40B,118 equivalent, key selection criteria include logic-level gate compatibility with 5 V microcontrollers, thermal performance under mounting-base-limited conduction (Rth(j-mb) = 0.59 K/W), SOA compliance up to 75 A/40 V, and automotive qualification for safety-critical load switching.

Technical Context

This device implements a trench-gate MOSFET structure optimized for low RDS(on) and high avalanche ruggedness. Its gate threshold voltage (VGS(th)) ranges from 0.5 V at 175 °C to 2.3 V at −55 °C, ensuring reliable turn-on across automotive temperature extremes while maintaining sub-1 µA IDSS leakage at 25 °C and 40 V VDS.

Dynamic behavior is characterized by 64 nC total gate charge (QG(tot)) and 24 nC gate-drain charge (QGD) at VGS = 5 V, supporting fast switching with 44 ns turn-on delay and 132 ns fall time. The integrated source-drain diode exhibits 0.85 V forward drop at 25 A and 70 ns reverse recovery time, suitable for freewheeling in inductive loads.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum - defines safe blocking capability for 12 V automotive systems with transient overvoltage margin
ID (continuous) 75 A at Tmb = 25 °C and VGS = 5 V - package-limited current rating for sustained load switching
RDS(on) 3.9 mΩ typical at VGS = 5 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements
EAS 961 mJ non-repetitive avalanche energy - provides fault tolerance during inductive load interruption without external snubbers
Tj max 175 °C - allows operation in high-ambient under-hood environments without derating below rated current
Rth(j-mb) 0.59 K/W - enables efficient heat transfer to PCB copper or heatsink via exposed mounting base
QG(tot) 64 nC at VGS = 5 V - determines gate driver strength requirement for <1 µs switching transitions

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with exposed mounting base connected to drain. Dimensions per IEC JEDEC outline: 15.8 × 10.3 × 4.5 mm (L × W × H), 3 leads (lead 2 cropped).

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Logic-level input terminal; accepts 5 V TTL/CMOS drive directly without level-shifting
2 (D) Drain High-side switched output node; electrically tied to mounting base for thermal and electrical connection
3 (S) Source Power return path; referenced to system ground in low-side switch configurations
Mounting base Drain (mb) Thermally conductive metal pad soldered to PCB copper pour; carries full drain current and dissipates >90% of heat

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive safety-critical applications including engine control, chassis, and body electronics
Logic-level gate drive Guaranteed turn-on with standard 5 V microcontroller outputs, eliminating need for gate driver ICs
175 °C junction rating Enables uninterrupted operation in under-hood locations where ambient exceeds 125 °C
Low RDS(on) at 5 V 3.9 mΩ typical ensures minimal I²R losses during high-current motor/lamp actuation cycles
High avalanche energy 961 mJ rating protects against voltage spikes during inductive load turn-off without external clamping

Applications

Engine Control Module Loads Body Control Module Switching

Use Scenario: Driving fuel injectors, ignition coils, and EGR valves in ICE powertrain systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12 V inductive loads with precise PWM timing.

Use Value: 175 °C rating ensures reliability in proximity to exhaust manifolds; 961 mJ avalanche energy absorbs coil flyback without snubber circuits.

Use Scenario: Controlling door locks, window lifters, interior lighting, and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch interfacing with 5 V MCU GPIO pins for on/off and PWM dimming control.

Use Value: 3.9 mΩ RDS(on) minimizes self-heating during extended duty cycles; AEC-Q101 certification meets OEM functional safety requirements.

Start-Stop System Solenoids Electric Power Steering Assist

Use Scenario: Engaging/disengaging starter motor solenoids and battery disconnect relays in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch handling repeated 75 A surge currents during cranking events.

Use Value: 75 A continuous rating and 697 A peak current capability support rapid start-stop cycling; D2PAK thermal design sustains 100% duty cycle at Tmb ≤ 100 °C.

Use Scenario: Driving torque-assist motors in column-assist or rack-assist EPS modules.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in three-phase inverter stage, requiring fast switching and low conduction loss.

Use Value: 64 nC QG(tot) and 44 ns td(on) enable efficient 20 kHz PWM operation; 0.59 K/W Rth(j-mb) maintains junction temperature below 150 °C under full-load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V VDS, 220 A ID, 1.8 mΩ RDS(on) at 10 V; requires 10 V gate drive for rated RDS(on) Higher current capacity but not logic-level optimized - needs gate driver for 5 V MCU interface Select when higher peak current (>100 A) is required and gate drive voltage can be increased to 10 V
IRF1404ZLPBF 40 V VDS, 195 A ID, 3.7 mΩ RDS(on) at 10 V; no AEC-Q101 qualification; TO-220 package Lacks automotive qualification and thermal performance of D2PAK; unsuitable for under-hood use Acceptable only for non-automotive industrial 12 V switching where qualification and thermal limits are not critical

Compared with STL220N4F7AG and IRF1404ZLPBF, BUK964R4-40B,118 uniquely combines AEC-Q101 qualification, true 5 V logic-level operation, D2PAK thermal efficiency, and 175 °C capability - making it the only viable choice for safety-critical, thermally constrained automotive power switching.

Availability

BUK964R4-40B,118 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and start-stop system designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for Tier-1 production programs.

Supply support for BUK964R4-40B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.

This part belongs to Nexperia's TrenchMOS automotive logic-level power MOSFET product line, engineered specifically for replacing mechanical relays and discrete transistors in 12 V automotive power distribution systems with enhanced efficiency, reliability, and integration.

FAQ

Is BUK964R4-40B,118 suitable for high-frequency PWM motor control?

Yes - with 44 ns turn-on delay, 132 ns fall time, and 64 nC total gate charge, it supports PWM frequencies up to 100 kHz in motor drive half-bridges. Its 24 nC gate-drain charge minimizes Miller-induced shoot-through risk, and the 0.59 K/W junction-to-mounting-base thermal resistance ensures stable operation at 20–50 kHz switching with proper PCB copper area.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is derated to 75 A at Tmb = 100 °C with VGS = 5 V. This limit is package-constrained, not silicon-limited - the die itself supports higher current, but thermal saturation in the D2PAK leadframe caps conduction at 75 A regardless of junction temperature.

Does the mounting base require electrical isolation from the PCB?

No - the mounting base is internally connected to the drain terminal (pin 2). It must be soldered directly to a large copper pour or heatsink that is electrically tied to the drain net. Isolation would impede both thermal dissipation and circuit functionality, as the base serves as the primary current and heat path.

Can BUK964R4-40B,118 replace a mechanical relay in automotive lighting circuits?

Yes - its 75 A continuous rating, 961 mJ avalanche energy, and 175 °C operation make it ideal for headlamp, fog lamp, and daytime running light control. Unlike relays, it offers silent operation, infinite cycle life, and precise PWM dimming without contact wear or bounce, while meeting ISO 7637-2 pulse immunity requirements when properly protected.

BUK964R4-40B,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
64 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
7124 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
254W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK964R4-40B,118 FAQ

1.How can I place an order for BUK964R4-40B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK964R4-40B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK964R4-40B,118 reliable?

The price and inventory of BUK964R4-40B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK964R4-40B,118 is usually 5 days.

3.What payment methods are accepted for BUK964R4-40B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK964R4-40B,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK964R4-40B,118?

BUK964R4-40B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK964R4-40B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK964R4-40B,118?

For technical support, including BUK964R4-40B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK964R4-40B,118 requirements.

6.How does Aetrix verify that BUK964R4-40B,118 is sourced from the original manufacturer or authorized distributors?

All BUK964R4-40B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK964R4-40B,118 meets industry standards.

7.What is the process for return or replacement of BUK964R4-40B,118?

All BUK964R4-40B,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK964R4-40B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK964R4-40B,118 part is unused and in its original packaging.

Return procedure for BUK964R4-40B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK964R4-40B,118 Tags

  • BUK964R4-40B,118
  • BUK964R4-40B,118 PDF
  • BUK964R4-40B,118 Datasheet
  • BUK964R4-40B,118 Specifications
  • BUK964R4-40B,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK964R4-40B,118
  • Buy BUK964R4-40B,118
  • BUK964R4-40B,118 Price
  • BUK964R4-40B,118 Distributor
  • BUK964R4-40B,118 Supplier
  • BUK964R4-40B,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER