Nexperia USA Inc. BUK964R7-80E,118

Overview

BUK964R7-80E from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS logic-level power MOSFET in SOT404 (D2PAK) package, rated for 80 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and 3.6 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C. It delivers ultra-low on-resistance with true logic-level gate drive compatibility down to 0.5 V threshold at 175 °C junction temperature, enabling direct interface with 3.3 V/5 V microcontrollers in automotive power switching.

For engineers reviewing the BUK964R7-80E datasheet, BUK964R7-80E pinout, BUK964R7-80E application, or BUK964R7-80E equivalent, key selection criteria include its 175 °C thermal rating, repetitive avalanche capability, 0.46 K/W junction-to-mounting-base thermal resistance, and suitability for high-current 12V/24V/48V automotive subsystems requiring robust thermally demanding operation.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) while maintaining high ruggedness and stable threshold voltage over temperature. Its gate-source threshold voltage remains ≥0.5 V even at 175 °C, ensuring reliable turn-on under worst-case thermal conditions in engine bay or transmission control modules.

The device features a mounting base (mb) electrically connected to the drain, enabling low-inductance PCB layout and efficient heat transfer to heatsinks. Its 28.9 nC Q_GD and 92.1 nC Q_G(tot) support fast switching in high-frequency PWM applications up to several hundred kHz without excessive gate drive loss.

Key Specifications

Pinout & Package

Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is integral to the drain terminal and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N6F7 and IRFB4115PBF, the BUK964R7-80E uniquely balances 80 V rating, AEC-Q101 compliance, 175 °C operation, and logic-level gate drive - making it the only option qualified for thermally aggressive 48 V automotive power nodes without gate boosting.

Availability

BUK964R7-80E is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and electric power steering systems requiring stable component supply across extended production lifecycles.

Supply support for BUK964R7-80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK964R7-80E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V–48 V automotive subsystems where AEC-Q101 compliance and thermal resilience are mandatory.

FAQ

Is BUK964R7-80E suitable for high-frequency PWM in EPS motor inverters?

Yes. With 28.9 nC Q_GD, 92.1 nC Q_G(tot), and 0.46 K/W R_th(j-mb), it supports efficient 10–50 kHz switching in half-bridge topologies. Its low C_oss (744–892 pF) and Crss (360–493 pF) minimize switching losses and EMI, and the 175 °C rating maintains performance under sustained thermal load in EPS enclosures.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is capped at 120 A regardless of mounting base temperature due to package limitation. At T_mb = 100 °C, the device still delivers 120 A, but total power dissipation must be reduced to maintain T_j ≤ 175 °C - corresponding to ~160 W P_tot based on thermal derating curves.

Does the mounting base require electrical isolation from the heatsink?

No. The mounting base is internally connected to the drain terminal, so it must be electrically tied to the drain net. If the heatsink is grounded, a dielectric thermal pad or insulating washer is required. Direct metal-to-metal contact is permitted only when the heatsink potential matches the drain voltage.

Can BUK964R7-80E replace BUZ72A in existing 12 V automotive designs?

Yes, with design validation. BUK964R7-80E offers lower R_DS(on) (3.6 mΩ vs. 12 mΩ), higher I_D (120 A vs. 30 A), and AEC-Q101 qualification - but requires verification of gate drive strength (higher Q_G), PCB copper area (larger D2PAK footprint), and thermal interface. Its logic-level gate simplifies replacement of BUZ72A in 5 V-driven circuits.