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Nexperia USA Inc. BUK964R8-60E,118

Part No.:
BUK964R8-60E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK964R8-60E,118.pdf
Description:
MOSFET N-CH 60V 100A D2PAK
Quantity:
Payment:
Payment
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Inventory:1,843

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Product details

Overview

BUK964R8-60E from Nexperia is a logic-level N-channel TrenchMOS power FET in SOT404 (D2PAK) package, rated for 60 V VDS, 100 A continuous drain current at Tmb = 25 °C, and 3.78 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching - including start-stop micro-hybrid control and transmission solenoid drivers.

For engineers reviewing the BUK964R8-60E datasheet, BUK964R8-60E pinout, BUK964R8-60E application, or BUK964R8-60E equivalent, this part supports thermally demanding 12 V automotive systems where true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), repetitive avalanche ruggedness, and 175 °C junction operation are critical selection criteria.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance with logic-compatible gate drive, enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting. Its mounting base (pin 4, connected to drain) provides low thermal resistance (Rth(j-mb) = 0.64 K/W) for high-power dissipation up to 234 W at Tmb = 25 °C.

The device features integrated source-drain diode with 39 ns reverse recovery time and 56 nC recovered charge, supporting synchronous rectification and freewheeling in inductive loads. Avalanche energy rating of 273 mJ (unclamped, single-pulse) ensures robustness against inductive switching transients in motor and solenoid control.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems under load dump conditions.
RDS(on) 3.78 mΩ (typ.) at VGS = 5 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 50 A, reducing heatsink requirements.
ID (cont.) 100 A at Tmb = 25 °C - Package-limited continuous current suitable for high-current solenoid and motor drivers.
QGD 20.3 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency.
Tj max 175 °C - Extended junction temperature rating enables operation in engine bay environments without derating.
EAS 273 mJ - Single-pulse unclamped avalanche energy supports reliable turn-off into inductive loads without external snubbers.
VGS(th) ≥0.5 V at Tj = 175 °C - True logic-level threshold ensures gate turn-on even under worst-case high-temperature conditions.

Pinout & Package

Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Logic-level input terminal; accepts 3.3 V/5 V drive directly from MCU GPIO or driver IC.
2 (D) Drain Main high-side power switch node; internally bonded to mounting base for low-inductance, high-current routing.
3 (S) Source Power return path; referenced to system ground in low-side configurations or used as sense node in current monitoring.
Mounting Base (mb) Drain / Thermal Interface Electrically tied to drain; provides mechanical attachment and primary thermal conduction path to heatsink or PCB copper pour.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability across temperature, humidity, and vibration stress profiles per JESD47.
Repetitive avalanche rating Rated for repeated inductive switching events without degradation, enabling robust motor commutation.
175 °C junction operation Full electrical performance maintained up to Tj = 175 °C, eliminating thermal derating in under-hood applications.
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures guaranteed turn-on with standard 5 V logic, avoiding gate driver complexity.
Low RDS(on) × QG figure-of-merit Combined 3.78 mΩ RDS(on) and 65 nC total gate charge optimizes conduction + switching loss trade-off.

Applications

Start-Stop Micro-Hybrid Control Transmission Solenoid Driver

Use Scenario: High-cycle switching of starter motor engagement/disengagement during engine restart in 12 V stop-start systems.

IC Role / Device Role / Timing Role: Main power switch controlling starter relay coil or direct battery-to-motor path; operates at <10 Hz with <10 ms on-time.

Use Value: 175 °C rating and repetitive avalanche capability prevent failure during frequent cranking pulses and load dump transients.

Use Scenario: Driving hydraulic solenoids in automatic transmission valve bodies requiring precise 12 V PWM current control.

IC Role / Device Role / Timing Role: Low-side switch modulating solenoid current via 1–5 kHz PWM; handles peak currents up to 80 A.

Use Value: 3.78 mΩ RDS(on) limits I²R heating to <0.5 W at 80 A, enabling compact PCB layout without forced air cooling.

Engine Cooling Fan Driver 12 V DC Motor Controller

Use Scenario: Controlling brushless or brushed radiator fan motors in passenger vehicles, subject to ambient temperatures up to 105 °C.

IC Role / Device Role / Timing Role: High-side or low-side power switch in H-bridge or single-FET configuration; duty-cycled at 100–500 Hz.

Use Value: Integrated source-drain diode with 39 ns trr enables efficient freewheeling, reducing EMI and voltage spikes during PWM off-time.

Use Scenario: Bidirectional control of auxiliary 12 V DC motors (e.g., power seat, window lift) using half-bridge topology.

IC Role / Device Role / Timing Role: One leg of dual-MOSFET half-bridge; switched at ≤20 kHz with 5 V gate drive from motor driver IC.

Use Value: Logic-level VGS(th) ensures full enhancement at MCU output voltage, eliminating need for external gate boost circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 220 A, RDS(on) = 2.2 mΩ @ 10 V; requires 10 V gate drive for full spec; no AEC-Q101 certification stated. Higher current capacity but not automotive-qualified; suited for industrial motor drives where qualification is not mandated. Select only if higher current headroom is needed and AEC-Q101 compliance is not required.
IRF1405ZPBF 55 V, 169 A, RDS(on) = 3.3 mΩ @ 10 V; TO-220 package; non-logic-level (VGS(th) = 2–4 V); no AEC-Q101 rating. Larger footprint and higher gate drive requirement limit use in space-constrained automotive modules. Consider only for legacy designs using through-hole assembly or where 5 V gate drive is unavailable.

Compared with STL220N6F7 and IRF1405ZPBF, BUK964R8-60E uniquely combines AEC-Q101 qualification, true 5 V logic-level operation, and D2PAK thermal performance - making it the only drop-in solution for new automotive power modules requiring zero gate-level translation and extended temperature reliability.

Availability

BUK964R8-60E is available at Aetrix Electronics and suitable for 12 V automotive systems, start-stop micro-hybrid control, and transmission solenoid drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for BUK964R8-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

BUK964R8-60E belongs to Nexperia's TrenchMOS automotive power portfolio, engineered specifically for thermally aggressive, safety-critical 12 V vehicle subsystems where robustness, low RDS(on), and logic-level compatibility are mandatory.

FAQ

Is BUK964R8-60E suitable for high-frequency PWM switching above 100 kHz?

No - while its QGD (20.3 nC) and Ciss (7.28 nF typ.) support moderate-speed switching, the device is optimized for 1–50 kHz automotive power control (e.g., solenoids, fans). Above 100 kHz, switching losses rise significantly due to gate charge and output capacitance values; dedicated high-frequency MOSFETs with lower QG and Coss are recommended.

Can BUK964R8-60E be used in a high-side configuration with 12 V supply?

Yes - its 60 V VDS rating and 175 °C operation make it suitable for high-side switching in 12 V systems. However, gate drive must provide ≥5 V relative to the source (i.e., floating or bootstrapped gate driver), as the device lacks integrated level-shifting. Standard high-side driver ICs (e.g., NCV8405) are compatible.

What is the maximum allowable PCB copper area for thermal relief when using the mounting base?

The datasheet specifies thermal performance assuming minimum footprint on FR4 PCB. For optimal Rth(j-a) (50 K/W), use ≥10 cm² of 2 oz copper connected directly to the mounting base via multiple thermal vias (≥8×0.3 mm diameter). Larger copper areas further reduce Rth(j-a), but diminishing returns occur beyond 25 cm² without forced airflow.

Does BUK964R8-60E include built-in ESD protection?

No - the device has no integrated ESD protection diodes. Per Nexperia's design, external TVS or RC filtering is required on gate and drain lines in automotive environments to withstand ISO 10605 ±25 kV contact discharge. Gate oxide integrity relies on proper handling and board-level protection.

BUK964R8-60E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
9710 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
234W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK964R8-60E,118 FAQ

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Please submit a Request for Quotation (RFQ) for BUK964R8-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of BUK964R8-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK964R8-60E,118 is usually 5 days.

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5.How can I obtain technical support or documentation for BUK964R8-60E,118?

For technical support, including BUK964R8-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK964R8-60E,118 requirements.

6.How does Aetrix verify that BUK964R8-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK964R8-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK964R8-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK964R8-60E,118?

All BUK964R8-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK964R8-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK964R8-60E,118 part is unused and in its original packaging.

Return procedure for BUK964R8-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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