Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK965R4-40E,118

Part No.:
BUK965R4-40E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK965R4-40E,118.pdf
Description:
MOSFET N-CH 40V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,861

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK965R4-40E from Nexperia is a logic-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 40 V drain-source voltage, 75 A continuous drain current at 25 °C mounting base temperature, and 4.3 mΩ typical RDS(on) at VGS = 5 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching including start-stop micro-hybrid systems.

For engineers reviewing the BUK965R4-40E datasheet, BUK965R4-40E pinout, BUK965R4-40E application, or BUK965R4-40E equivalent, key selection criteria include its true logic-level gate (VGS(th) ≥ 0.5 V at 175 °C), 175 °C junction rating, repetitive avalanche capability, and thermal resistance of 1.09 K/W (junction-to-mounting base).

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 33.9 nC, QGD = 12.6 nC). Its gate threshold remains functional up to 175 °C, enabling stable operation in thermally demanding under-hood environments.

The device integrates a robust body diode with 27 ns reverse recovery time and 22.6 nC recovered charge, supporting synchronous rectification and inductive load control. Mounting base (drain-connected) enables direct heatsinking, and its SOA supports 460 A peak drain current for ≤10 µs pulses.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 12 V automotive battery systems with load dump margin.
RDS(on)4.3 mΩ typ @ VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 75 A, reducing thermal design burden.
ID75 A continuous @ Tmb = 25 °C - Package-limited current suitable for high-power solenoid and motor drivers.
QGD12.6 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency.
Rth(j-mb)1.09 K/W - Enables direct PCB copper pour or heatsink attachment for efficient thermal management in space-constrained modules.
VGS(th)≥0.5 V @ Tj = 175 °C - Ensures reliable turn-on with standard 3.3 V/5 V logic controllers even at extreme junction temperatures.
EAS131 mJ (non-repetitive) - Supports unclamped inductive switching events without failure in transmission control actuators.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateLogic-level input controlling channel conduction; requires ≤5 V drive for full enhancement.
2 (D)DrainMain high-side or low-side power terminal; internally bonded to mounting base for thermal and electrical continuity.
3 (S)SourceReference node for gate drive and current return path; forms source-drain diode anode.
Mounting Base (mb)Drain connection / Thermal interfaceExposed copper pad soldered to PCB thermal plane; carries full drain current and dissipates >90% of heat.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive use per stress test requirements including HTOL, TC, HTRB, and UHAST.
Repetitive avalanche ratingRated for repeated inductive energy clamping without degradation-critical for transmission valve control.
175 °C maximum junction temperatureEnables operation in engine bay locations where ambient exceeds 125 °C, reducing need for derating.
True logic-level gateVGS(th) ≥ 0.5 V at 175 °C ensures compatibility with 3.3 V microcontrollers without level-shifting circuitry.
Low RDS(on) × QG figure-of-merit~183 Ω·nC - Balances conduction and switching losses for high-efficiency 12 V DC-DC and motor drives.

Applications

Start-Stop Micro-Hybrid ControlTransmission Solenoid Driver

Use Scenario: Controlling starter motor engagement and battery isolation during engine restart cycles in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch handling bidirectional load currents up to 75 A with precise timing control.

Use Value: Eliminates need for external gate drivers due to logic-level compatibility, while 131 mJ avalanche energy withstands coil back-EMF spikes.

Use Scenario: Driving electro-hydraulic transmission solenoids requiring fast, repeatable actuation under high ambient temperature.

IC Role / Device Role / Timing Role: Robust low-side switch delivering 20–40 A pulsed current with <55 ns turn-off delay for precise pressure modulation.

Use Value: 175 °C rating and 1.09 K/W Rth(j-mb) maintain reliability in confined transmission control units without forced air cooling.

12 V Automotive Lamp DriverHigh-Performance Power Distribution

Use Scenario: PWM-controlled headlamp and fog lamp dimming in modern lighting modules with CAN-based diagnostics.

IC Role / Device Role / Timing Role: High-efficiency, low-noise switching element operating at 100–500 Hz with minimal EMI generation.

Use Value: 4.3 mΩ RDS(on) limits self-heating to <0.5 W at 10 A, enabling compact PCB layout and eliminating heatsinks.

Use Scenario: Centralized power distribution unit (PDU) managing multiple 12 V loads including ADAS cameras, radar, and infotainment subsystems.

IC Role / Device Role / Timing Role: Smart high-side switch providing overcurrent protection, diagnostics, and load shedding via integrated sensing.

Use Value: Repetitive avalanche capability allows safe interruption of inductive loads during fault conditions without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AG40 V, 220 A, RDS(on) = 1.7 mΩ @ 10 V; requires 10 V gate drive for full spec compliance.Higher current capacity but not logic-level-needs gate driver for 3.3 V MCU interfaces.Select when higher peak current and lower RDS(on) justify added gate drive complexity.
IRF1404ZLPBF40 V, 180 A, RDS(on) = 3.8 mΩ @ 10 V; non-AEC-Q101; max Tj = 175 °C but no automotive qualification.Lacks AEC-Q101 validation and has weaker avalanche rating (EAS = 95 mJ).Acceptable for industrial 12 V power switching where automotive qualification is not mandated.

Compared with STL220N4F7AG and IRF1404ZLPBF, BUK965R4-40E uniquely combines AEC-Q101 qualification, true logic-level operation down to 175 °C, and 131 mJ avalanche energy-making it the only drop-in solution for safety-critical automotive start-stop and transmission control without gate driver redesign.

Availability

BUK965R4-40E is available at Aetrix Electronics and suitable for automotive power distribution, start-stop micro-hybrid systems, and transmission control modules requiring stable component supply across extended production lifecycles.

Supply support for BUK965R4-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The TrenchMOS logic-level FET product line targets automotive power switching applications demanding AEC-Q101 compliance, high-temperature stability, and robust avalanche performance-especially in engine control, transmission, and body electronics.

FAQ

Is BUK965R4-40E suitable for high-side switching configurations?

Yes-it supports both high-side and low-side topologies. Its gate threshold remains ≥0.5 V at 175 °C, and the mounting base is tied to drain, enabling direct heatsinking in high-side layouts. However, high-side use requires a floating gate driver capable of delivering ≥5 V above the drain rail.

What is the maximum allowable PCB copper area for thermal performance?

Per Nexperia's thermal characterization, a minimum 100 mm² (10 mm × 10 mm) 2-oz copper pour connected to the mounting base achieves the specified Rth(j-mb) = 1.09 K/W. Larger areas further reduce thermal resistance, but diminishing returns set in beyond 200 mm².

Does BUK965R4-40E include integrated ESD protection?

No-this MOSFET does not integrate ESD protection circuitry. External TVS diodes or RC snubbers are recommended on gate and drain lines in automotive environments to suppress transients exceeding ±15 V (per IEC 61000-4-2 Level 4) and load-dump spikes up to 40 V.

Can BUK965R4-40E replace BUZ72A in existing designs?

No-BUZ72A is a 500 V, 12 A TO-220 device with different voltage class, current rating, and package. BUK965R4-40E is a 40 V, 75 A D2PAK part intended for 12 V automotive systems. Direct replacement would violate voltage and thermal design margins and is not recommended.

BUK965R4-40E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
33.9 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
4483 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
137W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK965R4-40E,118 FAQ

1.How can I place an order for BUK965R4-40E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK965R4-40E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK965R4-40E,118 reliable?

The price and inventory of BUK965R4-40E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK965R4-40E,118 is usually 5 days.

3.What payment methods are accepted for BUK965R4-40E,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK965R4-40E,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK965R4-40E,118?

BUK965R4-40E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK965R4-40E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK965R4-40E,118?

For technical support, including BUK965R4-40E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK965R4-40E,118 requirements.

6.How does Aetrix verify that BUK965R4-40E,118 is sourced from the original manufacturer or authorized distributors?

All BUK965R4-40E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK965R4-40E,118 meets industry standards.

7.What is the process for return or replacement of BUK965R4-40E,118?

All BUK965R4-40E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK965R4-40E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK965R4-40E,118 part is unused and in its original packaging.

Return procedure for BUK965R4-40E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK965R4-40E,118 Tags

  • BUK965R4-40E,118
  • BUK965R4-40E,118 PDF
  • BUK965R4-40E,118 Datasheet
  • BUK965R4-40E,118 Specifications
  • BUK965R4-40E,118 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK965R4-40E,118
  • Buy BUK965R4-40E,118
  • BUK965R4-40E,118 Price
  • BUK965R4-40E,118 Distributor
  • BUK965R4-40E,118 Supplier
  • BUK965R4-40E,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER