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Nexperia USA Inc. BUK966R5-60E,118

Part No.:
BUK966R5-60E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK966R5-60E,118.pdf
Description:
MOSFET N-CH 60V 75A D2PAK
Quantity:
Payment:
Payment
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Inventory:4,765

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Product details

Overview

BUK966R5-60E from Nexperia is a logic-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 60 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 5.34 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It serves as a high-current power switch in automotive 12 V systems, supporting start-stop micro-hybrid control and transmission actuation under thermally demanding conditions up to 175 °C junction temperature.

For engineers reviewing the BUK966R5-60E datasheet, BUK966R5-60E pinout, BUK966R5-60E application, or BUK966R5-60E equivalent, this device is selected for its AEC Q101 qualification, repetitive avalanche rating, true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), low thermal resistance (Rth(j-mb) = 0.82 K/W), and robust 196 mJ single-pulse avalanche energy capability.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 48 nC, QGD = 16.6 nC). Its gate threshold voltage remains functional across the full −55 °C to +175 °C junction range, enabling reliable turn-on with standard 5 V logic drivers even at extreme temperatures.

The device integrates a source-drain diode with 34 ns reverse recovery time and 44 nC recovered charge, supporting synchronous rectification and inductive load commutation. Mounting base (pin 4) is electrically connected to drain, requiring isolation-aware PCB layout and heatsinking design for safe operation at 182 W Ptot.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum blocking voltage for 12 V automotive battery systems with load-dump transients.
RDS(on) 5.34 mΩ (typ) at VGS = 5 V, Tj = 25 °C - Enables <1.3 W conduction loss at 25 A, critical for thermal management in sealed modules.
ID (cont) 75 A at Tmb = 25 °C - Package-limited current capacity suitable for high-power solenoid and motor drivers.
EAS 196 mJ (unclamped) - Supports robust operation during inductive switching events without external snubbers.
Rth(j-mb) 0.82 K/W - Allows direct mounting to chassis or heatsink for efficient heat extraction in space-constrained automotive ECUs.
VGS(th) ≥0.5 V at Tj = 175 °C - Ensures guaranteed turn-on with 3.3 V/5 V microcontrollers under worst-case thermal stress.
QGD 16.6 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

SOT404 (D2PAK) plastic surface-mount package with 3 leads (one cropped) and integral mounting base (pin 4) electrically tied to drain. Requires thermal pad soldering to PCB copper pour or heatsink for rated power dissipation.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Logic-level input terminal; accepts 5 V drive directly from MCU GPIO without level-shifting.
2 (D) Drain Main high-side power output node; internally bonded to mounting base for low-inductance thermal path.
3 (S) Source Power return path; referenced to system ground in low-side switch configuration.
mb (Mounting Base) Drain connection Exposed metal pad on underside; must be soldered to PCB thermal plane and electrically isolated from other nets.

Key Features

Feature Design Value
AEC Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC Q101-004/007/011.
Repetitive avalanche rated Rated for repeated unclamped inductive switching events without degradation, enabling simplified protection circuitry.
175 °C maximum junction temperature Supports operation in engine bay or transmission control units where ambient exceeds 125 °C.
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures turn-on margin with 3.3 V or 5 V controllers under worst-case thermal bias.
Low Rth(j-mb) 0.82 K/W enables >150 W sustained power handling with 50 K temperature rise above heatsink, reducing need for forced air cooling.

Applications

Engine Start-Stop Control Transmission Solenoid Driver

Use Scenario: High-duty-cycle switching of starter motor engagement solenoids in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side power switch controlling 12 V solenoid coil current up to 75 A peak.

Use Value: 5.34 mΩ RDS(on) limits resistive heating during frequent engagement cycles, while 196 mJ avalanche rating absorbs coil energy during de-energization.

Use Scenario: PWM-controlled hydraulic pressure modulation in automatic transmission valve bodies.

IC Role / Device Role / Timing Role: High-speed, high-current switch driving inductive solenoid loads with 34 ns trr and 44 nC Qr.

Use Value: Fast diode recovery and low QGD enable clean 1–10 kHz PWM without shoot-through or excessive switching losses.

12 V Battery Disconnect Switch Electric Power Steering Motor Driver

Use Scenario: Isolation of auxiliary battery banks during fault conditions or deep discharge states.

IC Role / Device Role / Timing Role: High-reliability main power switch with overcurrent and thermal shutdown coordination.

Use Value: AEC Q101 qualification and 175 °C rating ensure fail-safe operation in under-hood environments where ambient reaches 105 °C.

Use Scenario: Half-bridge leg in 12 V EPS motor phase driver with regenerative braking capability.

IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch handling bidirectional motor current up to 75 A.

Use Value: 0.82 K/W Rth(j-mb) supports continuous 40 A operation with passive heatsinking, eliminating need for fan-cooled designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 220 A, RDS(on) = 2.2 mΩ @ 10 V; requires 10 V gate drive for full performance. Higher current rating but not logic-level - needs gate driver IC for 3.3 V MCU interface. Select when higher current headroom and lower RDS(on) justify added gate drive complexity.
IRF1405ZPBF 55 V, 169 A, RDS(on) = 3.3 mΩ @ 10 V; non-AEC qualified; TO-220 package. Lacks automotive qualification and thermal performance - unsuitable for under-hood deployment. Consider only for non-automotive industrial prototypes where qualification and SMT assembly are not required.

Compared with STL220N6F7 and IRF1405ZPBF, BUK966R5-60E uniquely combines AEC Q101 compliance, true 5 V logic-level operation, SOT404 surface-mount packaging, and 175 °C junction rating-making it the only drop-in solution for production automotive control modules requiring zero gate-drive overhead and high thermal resilience.

Availability

BUK966R5-60E is available at Aetrix Electronics and suitable for engine start-stop control, transmission solenoid actuation, and 12 V battery disconnect switching requiring stable component supply across automotive production lifecycles.

Supply support for BUK966R5-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.

BUK966R5-60E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for thermally aggressive 12 V vehicle subsystems requiring AEC Q101 compliance and robust avalanche performance.

FAQ

Is BUK966R5-60E suitable for high-frequency PWM applications?

Yes - with 32 ns td(on), 75 ns tr, 59 ns td(off), and 59 ns tf, it supports clean switching up to 100 kHz in motor control and solenoid drive. Its 16.6 nC QGD and 48 nC QG(tot) minimize Miller effects, enabling stable operation with standard 5 V gate drivers without external negative turn-off bias.

What is the maximum continuous current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is derated to 75 A at Tmb = 100 °C - identical to the 25 °C rating - because current is package-limited, not silicon-limited. This reflects the D2PAK's thermal design, where power dissipation (not current alone) governs safe operating area at elevated temperatures.

Does the mounting base require electrical isolation from the PCB ground plane?

Yes - the mounting base is internally connected to the drain (pin 2), so it must be electrically isolated from all other PCB nets, including ground. Standard practice is to use a non-conductive thermal interface material or isolated copper pour with appropriate creepage/clearance spacing per automotive safety standards (e.g., ISO 26262).

Can BUK966R5-60E replace older BUZ11 or IRFZ44N devices in existing designs?

Yes - it offers superior RDS(on) (5.34 mΩ vs. 28 mΩ for BUZ11), higher current (75 A vs. 30 A), AEC Q101 qualification, and 175 °C rating versus 150 °C. Pin-compatible with SOT404 footprint, but gate threshold behavior differs: BUK966R5-60E guarantees turn-on at 0.5 V, whereas BUZ11 requires ~2–4 V - verify MCU drive strength and logic compatibility before substitution.

BUK966R5-60E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
6900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
182W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK966R5-60E,118 FAQ

1.How can I place an order for BUK966R5-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK966R5-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of BUK966R5-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK966R5-60E,118 is usually 5 days.

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5.How can I obtain technical support or documentation for BUK966R5-60E,118?

For technical support, including BUK966R5-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK966R5-60E,118 requirements.

6.How does Aetrix verify that BUK966R5-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK966R5-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK966R5-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK966R5-60E,118?

All BUK966R5-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK966R5-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK966R5-60E,118 part is unused and in its original packaging.

Return procedure for BUK966R5-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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