Nexperia USA Inc. BUK9675-100A,118

Overview

BUK9675-100A from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in D2PAK (SOT404) package, designed for automotive critical switching. It delivers 100 V drain-source voltage rating, 23 A continuous drain current at 25 °C mounting base temperature, and 60–75 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C - enabling robust 12 V/24 V automotive load control with low conduction loss.

For engineers reviewing the BUK9675-100A datasheet, BUK9675-100A pinout, BUK9675-100A application, or BUK9675-100A equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1–2.3 V), avalanche ruggedness (100 mJ unclamped), thermal resistance (R_th(j-mb) = 1.5 K/W), and AEC-Q101 qualification for under-hood motor drivers and body control modules.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance while maintaining fast switching performance: typical Q_G(tot) = 24.3 nC, t_r = 120–168 ns, and t_f = 57–86 ns under V_GS = 5 V, V_DS = 30 V, and R_G(ext) = 10 Ω conditions. Its internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are optimized for high-frequency PWM operation in DC-DC converters and motor phases.

The device features a monolithic source-drain diode with V_SD = 0.85–1.2 V at I_S = 10 A and T_j = 25 °C, and reverse recovery characteristics (t_rr = 53.7 ns, Q_r = 126 nC) suitable for synchronous rectification and freewheeling in automotive power stages.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with exposed mounting base connected to drain. Dimensions: 15.8 × 10.3 × 4.5 mm (L × W × H); 3 leads (lead 1 cropped).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N6F7 and IRF3205PBF, the BUK9675-100A uniquely combines 100 V rating, AEC-Q101 qualification, logic-level drive, and 1.5 K/W thermal resistance - making it the only viable option for thermally demanding, safety-critical automotive power switching where voltage margin and reliability are non-negotiable.

Availability

BUK9675-100A is available at Aetrix Electronics and suitable for automotive body electronics, engine management subsystems, and industrial motor control requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for BUK9675-100A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and advanced packaging.

The BUK9675-100A belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for automotive power distribution and motor control where AEC-Q101 compliance, low R_DS(on), and robust thermal performance are essential.

FAQ

Is BUK9675-100A suitable for high-side switching in 24 V automotive systems?

Yes - its 100 V V_DS rating provides 4× margin over nominal 24 V systems, and the exposed mounting base (connected to drain) enables low-inductance, high-current high-side layout. The device supports gate drive from 3.3 V or 5 V controllers without external level shifting due to V_GS(th) ≤ 2.3 V.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 of the datasheet, the continuous drain current drops to 16 A at T_mb = 100 °C with V_GS ≥ 5 V. This derating reflects thermal limits of the D2PAK package and must be accounted for in thermal design using R_th(j-mb) = 1.5 K/W and ambient/mounting conditions.

Does BUK9675-100A include integrated gate protection?

No - it does not integrate gate Zener clamping or series resistance. External gate resistors (e.g., 10 Ω) and TVS diodes are recommended to limit dV/dt-induced ringing and transient overvoltage, especially in high-noise automotive environments per ISO 7637-2.

Can BUK9675-100A replace older MOSFETs like IRFZ44N in automotive designs?

Only with validation - while both are N-channel logic-level devices, BUK9675-100A offers AEC-Q101 qualification, higher V_DS (100 V vs. 55 V), lower R_DS(on) at 5 V (60–75 mΩ vs. ~28 mΩ at 10 V), and superior thermal resistance. Direct replacement requires gate drive compatibility and thermal redesign verification.