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Nexperia USA Inc. BUK969R0-60E,118

Part No.:
BUK969R0-60E,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUK969R0-60E,118.pdf
Description:
MOSFET N-CH 60V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,111

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Product details

Overview

BUK969R0-60E from Nexperia is a logic-level N-channel TrenchMOS FET in SOT404 (D2PAK) package, rated for 60 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 7.53 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It is AEC-Q101 qualified and designed for high-reliability automotive power switching - including start-stop micro-hybrid control and transmission solenoid drivers.

For engineers reviewing the BUK969R0-60E datasheet, BUK969R0-60E pinout, BUK969R0-60E application, or BUK969R0-60E equivalent, key selection criteria include its true logic-level gate (VGS(th) > 0.5 V at 175 °C), 175 °C junction rating, repetitive avalanche capability, and mounting-base thermal resistance of 1.09 K/W - critical for thermally constrained 12 V automotive systems.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low RDS(on) with robust gate oxide integrity and stable threshold voltage across temperature. Its gate threshold remains functional up to 175 °C, enabling direct drive from 5 V microcontrollers without level-shifting in engine bay environments.

The device integrates a source-drain diode with 27 ns reverse recovery time and 28 nC recovered charge, supporting synchronous rectification and inductive load commutation. Its 9.7 nC QGD and 29.8 nC QG(tot) support fast, low-loss switching at frequencies up to several hundred kHz in DC-DC and motor control stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery transients (load dump, jump-start).
RDS(on) 7.53 mΩ @ VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 36 A, reducing heatsink requirements in space-constrained modules.
ID (cont) 75 A @ Tmb = 25 °C - Package-limited current supports high-power solenoid and motor drivers without paralleling.
EAS 86 mJ - Non-repetitive avalanche energy rating allows safe operation during inductive turn-off spikes without external snubbers.
Rth(j-mb) 1.09 K/W - Low junction-to-mounting-base thermal resistance enables efficient heat transfer to PCB copper or heatsink in surface-mount layouts.
VGS(th) 0.5 V min @ Tj = 175 °C - True logic-level gate ensures reliable turn-on with standard 5 V MCU GPIOs even under extreme under-hood temperatures.
QGD 9.7 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves immunity to dv/dt-induced false turn-on.

Pinout & Package

Package: SOT404 (D2PAK), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; accepts 5 V logic-level drive; requires <100 nA leakage current at 25 °C for low standby power.
2 D (Drain) Main power output terminal; internally bonded to mounting base for low-inductance, high-current path to heatsink or PCB plane.
3 S (Source) Power return node; referenced to system ground; carries full load current and supports integrated body diode conduction.
mb Mounting Base Thermally and electrically tied to drain; serves as primary heat dissipation path and must be soldered to ≥200 mm² copper area for rated Ptot.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per ISO 10605 - suitable for safety-critical power nodes.
Repetitive avalanche rated Rated for repeated unclamped inductive switching events up to 86 mJ, eliminating need for external clamping diodes in solenoid drivers.
175 °C maximum junction temperature Enables operation in engine compartment locations where ambient exceeds 125 °C, with derated current maintained up to Tmb = 100 °C (59 A).
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures guaranteed turn-on with 5 V microcontroller outputs without gate driver ICs or resistive dividers.
Low QGD/QG(tot) ratio 9.7 nC / 29.8 nC = 0.33 - improves switching controllability and reduces risk of shoot-through in half-bridge configurations.

Applications

Start-Stop Micro-Hybrid Control Transmission Solenoid Driver

Use Scenario: Managing battery disconnect and starter motor engagement during engine auto-stop/restart cycles in 12 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side power switch controlling main battery feed to starter relay and DC-DC converter input.

Use Value: 75 A continuous rating and 333 A peak current support rapid cranking pulses; 175 °C rating withstands under-hood thermal soak between cycles.

Use Scenario: Driving linear or on/off transmission solenoids requiring precise 12 V PWM-controlled current up to 25 A.

IC Role / Device Role / Timing Role: Low-side switch interfacing MCU PWM output to solenoid coil, with integrated body diode for flyback energy recirculation.

Use Value: 27 ns trr and 28 nC Qr minimize switching losses and EMI during 1–10 kHz PWM; RDS(on) stability over temperature ensures consistent solenoid force.

12 V Automotive Lighting Control Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: High-current headlamp or fog lamp switching in adaptive front-lighting systems (AFS), handling inrush and steady-state loads.

IC Role / Device Role / Timing Role: Single-ended high-side switch replacing electromechanical relays to enable diagnostics, dimming, and fault reporting.

Use Value: AEC-Q101 qualification ensures long-term reliability under vibration and thermal cycling; 60 V VDS accommodates 12 V system transients up to ±60 V.

Use Scenario: Half-bridge phase leg in 12 V EPS motor inverters, delivering up to 40 A per phase with fast PWM commutation.

IC Role / Device Role / Timing Role: Low-side MOSFET in three-phase inverter stage, synchronized with complementary high-side drive for torque ripple reduction.

Use Value: 9.7 nC QGD and 56 ns tr enable clean 20 kHz switching; mounting base thermal path sustains 137 W Ptot with proper PCB copper design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 220 A, RDS(on) = 2.2 mΩ @ 10 V; requires 10 V gate drive; not AEC-Q101 qualified. Better conduction efficiency at high current but unsuitable for 5 V logic drive or automotive qualification-critical designs. Select only if gate drive is 10 V and automotive qualification is not required; verify thermal layout for higher current density.
IRF1405ZLPbF 55 V, 169 A, RDS(on) = 3.3 mΩ @ 10 V; TO-220AB package; no AEC-Q101 rating; higher QGD (25 nC). Larger footprint and lower VDS margin; lacks automotive qualification and logic-level compatibility at elevated temperature. Use only in non-automotive industrial applications where 55 V rating and through-hole assembly are acceptable.

Compared with STL220N6F7 and IRF1405ZLPbF, the BUK969R0-60E uniquely combines AEC-Q101 compliance, true 5 V logic-level operation at 175 °C, and D2PAK thermal performance - making it the only drop-in solution for space-constrained, thermally demanding automotive power switches requiring zero gate-level translation.

Availability

BUK969R0-60E is available at Aetrix Electronics and suitable for 12 V automotive systems, start-stop micro-hybrid control, and transmission solenoid drivers requiring stable component supply, long lifecycle assurance, and automotive-grade traceability.

Supply support for BUK969R0-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

The BUK969R0-60E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for thermally aggressive 12 V vehicle subsystems requiring robustness, low gate drive voltage, and AEC-Q101 compliance.

FAQ

Is BUK969R0-60E suitable for high-frequency PWM applications?

Yes - with 56 ns rise time, 46 ns fall time, and 9.7 nC QGD, the device supports clean switching up to 200 kHz in motor control and DC-DC converters. Its low Crss (160–219 pF) and 3263 pF Ciss ensure minimal Miller effect, but layout must minimize gate loop inductance to preserve timing integrity.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is derated to 59 A at Tmb = 100 °C with VGS = 5 V. This reflects thermal limitation of the SOT404 package, not silicon degradation - RDS(on) remains stable up to 175 °C junction temperature.

Does the mounting base require electrical isolation from the heatsink?

No - the mounting base is electrically connected to the drain terminal. If mounted to a conductive heatsink, the heatsink must be isolated from system ground or other potentials unless drain is at chassis potential. Use electrically insulating thermal pads or pastes rated for ≥60 V dielectric strength.

Can BUK969R0-60E replace older MOSFETs like BUZ11 in automotive upgrades?

Yes - with identical SOT404 footprint and superior specs (lower RDS(on), AEC-Q101 qualification, 175 °C rating), it directly upgrades BUZ11 in 12 V systems. However, verify gate drive strength: BUZ11's higher VGS(th) may mask marginal 5 V drive, whereas BUK969R0-60E's 0.5 V threshold exposes weak drive paths.

BUK969R0-60E,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
29.8 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
4350 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
137W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

BUK969R0-60E,118 FAQ

1.How can I place an order for BUK969R0-60E,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK969R0-60E,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK969R0-60E,118 reliable?

The price and inventory of BUK969R0-60E,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK969R0-60E,118 is usually 5 days.

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BUK969R0-60E,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK969R0-60E,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK969R0-60E,118?

For technical support, including BUK969R0-60E,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK969R0-60E,118 requirements.

6.How does Aetrix verify that BUK969R0-60E,118 is sourced from the original manufacturer or authorized distributors?

All BUK969R0-60E,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK969R0-60E,118 meets industry standards.

7.What is the process for return or replacement of BUK969R0-60E,118?

All BUK969R0-60E,118 units undergo pre-shipment inspection (PSI). If there is an issue with BUK969R0-60E,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK969R0-60E,118 part is unused and in its original packaging.

Return procedure for BUK969R0-60E,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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