Nexperia USA Inc. BUK969R3-100E,118

Overview

BUK969R3-100E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in SOT404 (D2PAK) package, rated for 100 V V_DS, 100 A continuous drain current at T_mb = 25 °C, and 263 W total power dissipation. It delivers 7.49 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, with true logic-level gate drive (V_GS(th) ≥ 0.5 V at 175 °C), enabling direct interface with 5 V microcontrollers in automotive motor and solenoid control.

For engineers reviewing the BUK969R3-100E datasheet, BUK969R3-100E pinout, BUK969R3-100E application, or BUK969R3-100E equivalent, key selection criteria include its 175 °C junction rating, repetitive avalanche capability, low R_DS(on) at logic-level gate voltage, and mounting-base thermal resistance of 0.57 K/W - all critical for thermally demanding 12–48 V automotive power switching.

Technical Context

This MOSFET employs TrenchMOS technology to achieve high current density and low conduction loss while maintaining robust switching performance. Its gate threshold voltage remains functional up to 175 °C, and it features a monolithic source-drain diode with 55.5 ns reverse recovery time and 142 nC recovered charge - optimized for hard-switched inductive loads.

The device uses a D2PAK (SOT404) package with the mounting base electrically connected to the drain, enabling low-inductance, high-current PCB layouts. Internal parasitics are tightly controlled: L_D = 2.5 nH and L_S = 7.5 nH, supporting fast switching with minimal voltage overshoot in high-dI/dt applications like transmission control and start-stop systems.

Key Specifications

Pinout & Package

The BUK969R3-100E is housed in a plastic single-ended surface-mounted D2PAK (SOT404) package with three leads (one cropped) and an exposed metal mounting base electrically tied to the drain terminal. The package provides low thermal resistance (R_th(j-mb) = 0.57 K/W) and high current handling via direct board-mount heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N10F7 and IRFB4115PBF, the BUK969R3-100E uniquely combines AEC-Q101 qualification, true 5 V logic-level operation, and 175 °C capability - making it the only choice for thermally constrained, safety-compliant automotive power switching where gate drive voltage and reliability are non-negotiable.

Availability

BUK969R3-100E is available at Aetrix Electronics and suitable for automotive motor control, transmission actuation, start-stop systems, and 48 V mild hybrid power distribution requiring stable component supply and long-term lifecycle support.

Supply support for BUK969R3-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

The BUK969R3-100E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine control, body electronics, and electrified powertrain systems.

FAQ

Is BUK969R3-100E suitable for high-frequency PWM applications?

Yes - with 39.5 ns turn-on delay, 95.1 ns rise time, 118 ns turn-off delay, and 93.4 ns fall time (at V_GS = 5 V, V_DS = 80 V, R_G(ext) = 5 Ω), it supports PWM frequencies up to several hundred kHz. Its low Q_GD (34 nC) and C_iss (8739 pF typ.) further enable efficient high-speed switching in motor control inverters and DC-DC converters.

What is the maximum continuous drain current at elevated mounting base temperature?

At T_mb = 100 °C and V_GS = 5 V, the maximum continuous drain current is 71 A (per Table 5). This derating reflects thermal limits imposed by R_th(j-mb) = 0.57 K/W and junction temperature cap of 175 °C - design must ensure adequate heatsinking to maintain T_mb ≤ 100 °C for full 71 A operation.

Does the mounting base require electrical isolation from the PCB?

No - the mounting base is electrically connected to the drain (Pin 2), so it must be routed to the same net as the drain circuit. Thermal interface material or solder paste may be used, but electrical isolation (e.g., insulating pads) would compromise both thermal performance and circuit functionality unless a floating drain configuration is intentionally designed.

Can BUK969R3-100E replace older MOSFETs like BUZ11 in automotive designs?

Yes, with caveats: BUK969R3-100E offers superior specs - 100 V vs. 50 V, 100 A vs. 30 A, 7.49 mΩ vs. 40 mΩ, and AEC-Q101 qualification - but requires verification of gate drive compatibility (true logic-level vs. BUZ11's ~2–4 V threshold) and PCB footprint adaptation (SOT404 vs. TO-220). Layout and thermal design must also accommodate its higher power density.