NXP Semiconductors BUK98150-55,135

Overview

BUK98150-55 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in SOT223 (SC-73) package, designed for automotive-grade switching. It delivers 5.5 A continuous drain current at 25 °C, 55 V drain-source breakdown voltage, and 120–150 mΩ R_DS(on) at V_GS = 5 V and I_D = 5 A, enabling robust low-side switching in engine control modules and body electronics.

For engineers reviewing the BUK98150-55 datasheet, BUK98150-55 pinout, BUK98150-55 application, or BUK98150-55 equivalent, this page provides verified electrical specs, thermal resistance data (R_th(j-sp) = 12–15 K/W), avalanche energy rating (15 mJ), gate threshold behavior (V_GS(th) = 0.6–2.3 V across temperature), and confirmed SOT223 pin mapping - all validated against Nexperia's official product data sheet dated 19 March 2014.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility (V_GS(th) ≤ 2.3 V at 150 °C; fully enhanced at 5 V). Its integrated protection diodes provide electrostatic robustness (HBM ESD = 2 kV), and its unclamped avalanche capability (15 mJ) supports inductive load switching without external snubbers.

The SOT223 package features a thermally enhanced 4-lead structure with dual drain terminals (Pins 2 & 4), enabling higher power dissipation (P_tot = 8.3 W at T_sp = 25 °C) and lower junction-to-solder-point thermal resistance than standard SOT-23 variants.

Key Specifications

Pinout & Package

SOT223 (SC-73) plastic surface-mounted package with increased heatsink area and 4 leads; Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S), Pin 4 = Drain (D) - dual-drain configuration improves thermal and current-handling capability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with STL135N5LF6AG and NTMFS5C670NL, the BUK98150-55 offers the only AEC-Q101-qualified, SOT223-packaged, 5.5 A logic-level MOSFET with validated 15 mJ avalanche ruggedness - making it uniquely suitable for cost-sensitive, space-constrained automotive body and powertrain modules requiring zero-layout-change upgrades.

Availability

BUK98150-55 is available at Aetrix Electronics and suitable for automotive body electronics, engine control units, and industrial motor starter applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for BUK98150-55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.

The BUK98150-55 belongs to Nexperia's TrenchMOS logic-level FET family, engineered specifically for automotive-critical power switching where AEC-Q101 compliance, thermal robustness, and gate-drive simplicity are mandatory.

FAQ

What is the maximum continuous drain current for BUK98150-55 at 100 °C mounting base temperature?

The BUK98150-55 supports 3.5 A continuous drain current at T_sp = 100 °C, as specified in Table 5 (Limiting Values) of the Nexperia datasheet. This derating reflects thermal constraints of the SOT223 package and ensures safe operation within the 150 °C maximum junction temperature limit. The BUK98150-55 maintains stable R_DS(on) performance across this range due to its TrenchMOS architecture.

Is BUK98150-55 qualified for automotive applications?

Yes, the BUK98150-55 is explicitly AEC-Q101 qualified, as stated in Section 2 (Features and benefits) and Section 1 (General description) of the Nexperia datasheet. It has been designed and tested to meet the stress test requirements for automotive critical applications, including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing.

What is the gate-source threshold voltage range for BUK98150-55 across temperature?

The BUK98150-55 exhibits a V_GS(th) range of 0.6 V (minimum at T_j = 150 °C) to 2.3 V (maximum at T_j = -55 °C), per Table 7 (Characteristics). At room temperature (25 °C), typical V_GS(th) is 1.5 V, confirming reliable turn-on with 3.3 V or 5 V logic signals - a key feature of the BUK98150-55 for MCU-direct drive.

Does BUK98150-55 have integrated ESD protection?

Yes, the BUK98150-55 includes integrated electrostatic discharge protection diodes, delivering a Human Body Model (HBM) rating of 2 kV, as documented in Table 5 (Limiting values). This eliminates the need for external ESD protection in most assembly and handling scenarios, a confirmed design advantage of the BUK98150-55.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for BUK98150-55?

The BUK98150-55 has a typical R_th(j-sp) of 12 K/W and maximum of 15 K/W when mounted on any printed-circuit board, per Table 6 (Thermal characteristics). This low value is enabled by the SOT223 package's exposed drain pads (Pins 2 and 4), allowing efficient heat conduction into PCB copper layers - a critical parameter for thermal design of the BUK98150-55 in high-reliability applications.