NXP Semiconductors BUK9875-100A,115

Overview

BUK9875-100A,115 from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in SC-73 (SOT223) package, rated for 100 V drain-source voltage, 7 A continuous drain current at 5 V gate drive, and 84 mΩ R_DS(on) at V_GS = 4.5 V and T_j = 25 °C. It serves as a robust automotive-grade high-side or low-side switch for 12 V/24 V loads including solenoids, lamps, and small motors.

For engineers reviewing the BUK9875-100A,115 datasheet, BUK9875-100A,115 pinout, BUK9875-100A,115 application, or BUK9875-100A,115 equivalent, this page delivers verified electrical parameters, thermal performance data, junction-to-solder-point resistance (15 K/W), avalanche energy rating (49 mJ), and validated automotive qualification status - all critical for power switching design validation and BOM selection.

Technical Context

This device employs TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility (V_GS(th) max 2.3 V at -55 °C, min 0.6 V at 150 °C), enabling direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry. Its 4-pin SC-73 package integrates dual drain terminals for enhanced current handling and thermal dissipation.

The BUK9875-100A,115 features unclamped inductive switching capability with 49 mJ non-repetitive avalanche energy, supports peak drain current up to 28 A (10 µs pulse), and maintains stable R_DS(on) across -55 °C to 150 °C junction temperature range - confirmed by normalized R_DS(on) factor curves and thermal transient impedance data.

Key Specifications

Pinout & Package

Package: SC-73 (SOT223) - plastic surface-mounted package with increased heatsink area and 4 leads; dimensions per JEDEC MO-178, with dual drain pins (pins 2 and 4) for parallel current paths and improved thermal conduction to PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL130N10F7 and IRLR024NPBF, the BUK9875-100A,115 uniquely balances AEC-Q101 compliance, 100 V rating, logic-level drive, and SOT223 form factor - making it the only option among the three qualified for automotive under-hood use with direct MCU interface and minimal layout impact.

Availability

BUK9875-100A,115 is available at Aetrix Electronics and suitable for automotive body electronics, industrial 24 V control systems, and LED lighting power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK9875-100A,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and automotive-grade quality.

The BUK9875-100A,115 belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET product line, engineered specifically for robust, low-loss switching in 12 V/24 V/42 V automotive subsystems and industrial control applications.

FAQ

What is the maximum continuous drain current for BUK9875-100A,115 at 100 °C solder point temperature?

The BUK9875-100A,115 supports 4 A continuous drain current at T_sp = 100 °C and V_GS = 5 V, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the SC-73 package and ensures reliable operation in high-ambient environments such as engine compartments. The BUK9875-100A,115 maintains safe junction temperatures when properly mounted on ≥1 cm² 2-oz copper pour.

Is BUK9875-100A,115 pin-compatible with other SOT223 MOSFETs like the BUK9Y11-75B?

No - the BUK9875-100A,115 has a unique 4-pin SC-73 pinout (G-D-S-D), whereas the BUK9Y11-75B uses standard 3-pin SOT223 (G-D-S). Pin 4 on the BUK9875-100A,115 is a second drain terminal, not a separate function. Direct substitution would require PCB layout revision. The BUK9875-100A,115 must be placed using its specific footprint per Figure 16 in the datasheet.

Does BUK9875-100A,115 include an integrated body diode, and what are its characteristics?

Yes - the BUK9875-100A,115 includes a parasitic source-drain diode with forward voltage V_SD = 0.85–1.2 V at I_S = 5 A and T_j = 25 °C (Table 7), and reverse recovery time t_rr = 63 ns. This diode supports freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification; external Schottky diodes are recommended for >100 kHz PWM applications.

What is the gate leakage current specification for BUK9875-100A,115 at room temperature?

The BUK9875-100A,115 exhibits gate leakage current I_GSS of 2–100 nA at V_GS = ±10 V and T_j = 25 °C (Table 7). This ultra-low leakage ensures minimal standby power draw and stable gate bias in always-on automotive modules. The BUK9875-100A,115 maintains this performance across its full -55 °C to +150 °C operating range.

Can BUK9875-100A,115 be used in high-frequency PWM motor control above 20 kHz?

Yes - the BUK9875-100A,115 has t_d(on) = 13 ns, t_r = 120 ns, t_d(off) = 58 ns, and t_f = 57 ns (Table 7), supporting efficient switching up to ~100 kHz. However, gate drive strength must be sufficient to charge its 1270–1690 pF input capacitance rapidly; a 1–2 Ω series resistor with a 2 A capable driver is recommended for clean edges and minimal shoot-through risk in half-bridge configurations.