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NXP Semiconductors BUK9907-55ATE,127

Part No.:
BUK9907-55ATE,127
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-220-5
Datasheet:
AetrixBUK9907-55ATE,127.pdf
Description:
MOSFET N-CH 55V 75A TO220-5
Quantity:
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Payment
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Inventory:2,391

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Product details

Overview

BUK9907-55ATE,127 from Nexperia is an AEC-Q101-qualified N-channel TrenchPLUS logic-level power MOSFET in TO-220 (SOT263B) package, featuring 55 V VDS, 140 A ID (Tmb = 25 °C), 5.8 mΩ RDS(on) @ VGS = 5 V, integrated temperature-sense diode (SF = −1.54 mV/K), and ESD protection diodes. It serves as a high-current automotive power switch in EPAS and 12/24 V motor drives.

For engineers reviewing the BUK9907-55ATE,127 datasheet, BUK9907-55ATE,127 pinout, BUK9907-55ATE,127 application, or BUK9907-55ATE,127 equivalent, key selection factors include its logic-level gate drive compatibility (VGS(th) = 1.5 V typ), junction temperature sensing capability, AEC-Q101 qualification, and thermal resistance of 0.55 K/W from junction to mounting base.

Technical Context

This device uses TrenchMOS technology with TrenchPLUS diodes for integrated ESD protection and precision temperature monitoring. Its gate threshold voltage (VGS(th)) ranges from 0.5 V at 175 °C to 2.3 V at −55 °C, enabling robust operation across automotive temperature extremes.

The MOSFET integrates a calibrated temperature-sense diode with ±32 mV hysteresis and forward voltage of 658 mV @ 25 °C, supporting real-time thermal feedback without external sensors. Its safe operating area supports 560 A pulsed drain current with 500 mJ non-repetitive clamping energy under defined conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum drain-source blocking voltage; defines use in 12 V/24 V automotive systems with transient margin.
RDS(on)5.8 mΩ @ VGS = 5 V, ID = 50 A, Tj = 25 °C - Enables low conduction loss in high-current switching paths.
ID140 A @ Tmb = 25 °C - Continuous drain current rating limited by package thermal capacity.
Tj Range−55 °C to +175 °C - Full automotive-grade junction temperature range per AEC-Q101.
QG(tot)108 nC - Total gate charge determines driver strength requirement for fast switching.
Rth(j-mb)0.55 K/W - Thermal resistance from die to mounting base enables efficient heatsink coupling.
ESD Rating6 kV HBM - Integrated protection diodes eliminate need for external ESD components.

Pinout & Package

Package: TO-220 (SOT263B) - plastic single-ended package with heatsink-mounted mounting base (pin 3), 5 leads, and 1 mounting hole. Mounting base is electrically connected to drain.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateLogic-level control input; requires ≥4.5 V for full enhancement; VGS(th) = 1.5 V typical.
2 (A)Anode of TSDAnode of integrated temperature-sense diode; used with external current source for thermal monitoring.
3 (D)DrainMain high-side power terminal; electrically tied to mounting base for thermal and electrical connection to heatsink.
4 (K)Cathode of TSDCathode of integrated temperature-sense diode; forms Kelvin pair with Pin 2 for accurate ΔVF measurement.
5 (S)SourcePower return path and reference for gate drive; internal source inductance = 7.5 nH.

Key Features

FeatureDesign Value
Integrated temperature-sense diodeCalibrated −1.54 mV/K coefficient and 658 mV forward voltage at 25 °C enables direct junction temperature readout without external sensor.
AEC-Q101 qualificationValidated for automotive critical applications including EPAS and power steering, ensuring reliability under vibration, thermal cycling, and humidity stress.
TrenchPLUS ESD protection6 kV HBM rating achieved via on-chip diodes, eliminating need for discrete TVS or RC networks at gate/drain terminals.
Logic-level gate driveVGS(th) = 1.5 V typ and RDS(on) = 5.8 mΩ @ 5 V allows direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry.
Low RDS(on) × QG figure-of-merit5.8 mΩ × 108 nC = 626 mΩ·nC - balances conduction and switching losses for high-efficiency motor control.

Applications

Electrical Power Assisted Steering (EPAS)12 V/24 V High-Power Motor Drives

Use Scenario: High-current bidirectional motor control in vehicle steering systems requiring precise torque response and fault-tolerant thermal management.

IC Role / Device Role / Timing Role: Main power switch in H-bridge or 3-phase inverter stage, handling up to 140 A continuous current with real-time junction temperature feedback.

Use Value: Integrated temperature-sense diode enables closed-loop thermal derating, preventing thermal runaway during sustained assist events.

Use Scenario: PWM-driven DC motors in industrial actuators, HVAC blowers, or commercial vehicle accessories operating from 12 V or 24 V battery rails.

IC Role / Device Role / Timing Role: Low-side or high-side switching element with fast turn-on (td(on) = 51 ns) and turn-off (td(off) = 341 ns) for efficient PWM operation at ≤20 kHz.

Use Value: 5.8 mΩ RDS(on) minimizes I²R losses at 100 A, reducing heatsink size and system cost versus higher-RDS(on) alternatives.

Protected Lamp DrivingAutomotive General-Purpose Power Switching

Use Scenario: Inrush-limited, short-circuit-protected headlamp or foglamp control in body control modules (BCMs).

IC Role / Device Role / Timing Role: Smart load switch with built-in overtemperature and overcurrent detection via temperature-sense diode and SOA compliance.

Use Value: Eliminates need for external current-sense resistors and thermal shutdown ICs, simplifying PCB layout and BOM.

Use Scenario: Centralized power distribution in junction boxes or power distribution units (PDUs) for auxiliary loads like seat heaters, window lifts, or cooling fans.

IC Role / Device Role / Timing Role: Robust, AEC-Q101-compliant power FET replacing electromechanical relays to improve lifetime and reduce acoustic noise.

Use Value: 55 V VDS rating accommodates load-dump transients up to ISO 7637-2 Pulse 5a, ensuring system-level surge immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB070N05N3 G55 V VDS, 120 A ID, 7.0 mΩ RDS(on) @ 4.5 V; no integrated temperature sense diode; PG-HSOF-8 package.Lacks junction temperature monitoring; requires external thermal protection circuitry in safety-critical EPAS.Choose when board space is constrained and thermal monitoring is handled externally.
STL220N5LF8AG55 V VDS, 110 A ID, 6.5 mΩ RDS(on) @ 4.5 V; AEC-Q101 qualified; no integrated TSD; PowerFLAT 8x8 HV package.Surface-mount alternative with lower profile but no on-die thermal sensing; higher RDS(on) increases conduction loss at 100+ A.Prefer for automated assembly where TO-220 through-hole mounting is undesirable.

Compared with BUK9907-55ATE,127, IPB070N05N3 G offers smaller footprint but forfeits integrated thermal monitoring, while STL220N5LF8AG provides SMT compatibility at the cost of higher on-resistance and absence of TSD-making BUK9907-55ATE,127 uniquely suited for thermally managed automotive power stages.

Availability

BUK9907-55ATE,127 is available at Aetrix Electronics and suitable for Electrical Power Assisted Steering (EPAS), 12 V/24 V motor drives, and protected lamp driving requiring stable component supply across automotive production lifecycles.

Supply support for BUK9907-55ATE,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BUK9907-55ATE,127 belongs to Nexperia's TrenchPLUS logic-level automotive MOSFET family, engineered specifically for high-reliability, thermally aware power switching in safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for BUK9907-55ATE,127?

The BUK9907-55ATE,127 supports 140 A continuous drain current at Tmb = 25 °C, limited by package thermal capacity. At Tmb = 100 °C, the rating drops to 75 A per Figure 2 in the datasheet. This derating behavior is critical for thermal design in enclosed EPAS housings where mounting base temperature exceeds ambient.

Does BUK9907-55ATE,127 include integrated electrostatic discharge (ESD) protection?

Yes, BUK9907-55ATE,127 incorporates TrenchPLUS diodes that provide 6 kV Human Body Model (HBM) ESD protection on pins 1 (gate), 3 (drain), and 5 (source), as confirmed in Table 4 of the datasheet. This eliminates the need for external TVS devices in most automotive board-level ESD protection schemes.

How is the temperature-sense diode in BUK9907-55ATE,127 used in practice?

The BUK9907-55ATE,127 features a calibrated temperature-sense diode (TSD) between pins 2 (anode) and 4 (cathode) with −1.54 mV/K coefficient. By injecting 250 µA and measuring forward voltage (VF = 658 mV @ 25 °C), microcontrollers calculate junction temperature with ±2 °C accuracy-enabling dynamic current derating in BUK9907-55ATE,127-based inverters.

Is BUK9907-55ATE,127 qualified to AEC-Q101 standards?

Yes, BUK9907-55ATE,127 is explicitly designed and qualified to AEC-Q101 for automotive critical applications, as stated in Section 1.1 of the product data sheet. This includes stress testing for temperature cycling, humidity, mechanical shock, and ESD-validating its use in EPAS, power distribution, and other safety-relevant systems.

What is the thermal resistance from junction to mounting base for BUK9907-55ATE,127?

The BUK9907-55ATE,127 has a maximum thermal resistance Rth(j-mb) of 0.55 K/W from junction to mounting base, per Table 5. This low value reflects direct die-to-heatsink conduction via the metal mounting base (pin 3), making it essential to use thermally conductive mounting hardware and thermal interface material for optimal performance.

BUK9907-55ATE,127 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-220-5
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
108 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
5836 pF @ 25 V
FET Feature:
Temperature Sensing Diode
Power Dissipation (Max):
272W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-5

BUK9907-55ATE,127 FAQ

1.How can I place an order for BUK9907-55ATE,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9907-55ATE,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9907-55ATE,127 reliable?

The price and inventory of BUK9907-55ATE,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9907-55ATE,127 is usually 5 days.

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4.How is shipping managed for BUK9907-55ATE,127?

BUK9907-55ATE,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9907-55ATE,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9907-55ATE,127?

For technical support, including BUK9907-55ATE,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9907-55ATE,127 requirements.

6.How does Aetrix verify that BUK9907-55ATE,127 is sourced from the original manufacturer or authorized distributors?

All BUK9907-55ATE,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9907-55ATE,127 meets industry standards.

7.What is the process for return or replacement of BUK9907-55ATE,127?

All BUK9907-55ATE,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9907-55ATE,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9907-55ATE,127 part is unused and in its original packaging.

Return procedure for BUK9907-55ATE,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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