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Nexperia USA Inc. BUK9C10-55BIT/A,11

Part No.:
BUK9C10-55BIT/A,11
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixBUK9C10-55BIT/A,11.pdf
Description:
MOSFET N-CH 55V 75A D2PAK-7
Quantity:
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Payment
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Inventory:2,568

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Product details

Overview

BUK9C10-55BIT/A,11 from Nexperia is an AEC-Q101-qualified N-channel TrenchPLUS logic-level MOSFET in D2PAK-7 (SOT427) package, featuring integrated current-sense FET (ID/Isense = 11,000 A/A) and temperature-sense diode (SF(TSD) = −6 mV/K), with RDSon = 8.2 mΩ @ VGS = 5 V, 10 A, 25 °C, rated for 55 V V(BR)DSS and 175 °C junction operation - used in automotive powertrain and body control modules.

For engineers reviewing the BUK9C10-55BIT/A,11 datasheet, BUK9C10-55BIT/A,11 pinout, BUK9C10-55BIT/A,11 application, or BUK9C10-55BIT/A,11 equivalent, this part supports thermally demanding 12 V automotive loads requiring real-time current monitoring, junction temperature feedback, and robust avalanche energy handling (215 mJ).

Technical Context

This device implements a monolithic TrenchPLUS silicon structure with dual integrated sensing elements: a Kelvin-source-referenced current sense FET enabling precise closed-loop current measurement without shunt resistors, and a matched temperature-sense diode with linear −6 mV/K coefficient for direct junction thermal feedback. The gate threshold voltage (VGSth = 1.1–2.3 V) ensures full enhancement at 5 V logic drive.

Its D2PAK-7 package features isolated mounting base (mb), dedicated Kelvin source (KS), and separate anode (A)/cathode (C) terminals for the internal source-drain diode - enabling high-accuracy sensing while maintaining low-inductance power paths (LD = 0.85 nH, LS = 1.9 nH).

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS55 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 12 V automotive systems with load-dump transients.
RDSon @ 5 V8.2 mΩ typ - Enables <1 W conduction loss at 10 A, critical for thermally constrained chassis/body ECU designs.
ID/Isense11,000 A/A - Allows accurate current sensing down to ~1 mA sense current for 11 A main current, eliminating external shunts.
SF(TSD)−6 mV/K - Provides linear, calibrated junction temperature readout via diode forward voltage, supporting thermal derating algorithms.
EAS215 mJ - Non-repetitive avalanche energy rating at 75 A, ensuring survivability during inductive switching events in solenoid/motor drives.
Tj max175 °C - Qualified for under-hood automotive environments where ambient exceeds 125 °C and heatsinking is limited.
Rth(j-mb)0.46 K/W typ - Low junction-to-mounting-base thermal resistance enables >150 W power dissipation with active heatsinking.

Pinout & Package

D2PAK-7 (SOT427) package with isolated copper mounting base (mb), 7-terminal surface-mount outline; pin 4 is internally connected but not accessible externally per datasheet Fig. 23.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateLogic-level control input; threshold 1.1–2.3 V enables direct MCU GPIO drive without level-shifting.
2 (IS)Current Sense OutputProvides proportional analog current signal (Isense = ID / 11,000); referenced to Kelvin source for accuracy.
3 (A)Anode of Integrated DiodeConnects to source-side node; used with cathode (pin 5) for freewheeling path in inductive loads.
4 (D)DrainNot externally accessible per SOT427 mechanical spec; internal connection only.
5 (C)Cathode of Integrated DiodeCompletes internal body diode path; enables bidirectional current flow during turn-off recovery.
6 (KS)Kelvin SourceLow-inductance, dedicated source return for sense circuitry; isolates measurement from power loop noise.
7 (S)Power SourceMain current return path; electrically distinct from KS to preserve sense accuracy under high di/dt.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive-grade reliability including HTOL, TC, HAST, and ESD (4 kV HBM on pin 4–7), enabling use in safety-critical chassis ECUs.
Integrated current sense FETEliminates external shunt resistor and associated PCB area, heat, and measurement error - ideal for space-constrained motor drivers.
Matched temperature sense diodeProvides direct junction temperature feedback with ±0.1 °C linearity over −55 to +175 °C, enabling dynamic thermal throttling.
175 °C maximum junction temperatureSupports operation in engine bay locations without forced cooling, reducing system cost and complexity vs. lower-rated alternatives.
Low gate charge (QG = 51 nC)Reduces switching losses and driver IC stress during PWM control at frequencies up to 100 kHz in lamp/solenoid applications.

Applications

Engine Control Unit (ECU) Valve DriverElectric Power Steering (EPS) Motor Phase Switch

Use Scenario: Driving 12 V fuel injector or throttle valve solenoids in engine management systems subject to wide ambient temperature swings and vibration.

IC Role / Device Role / Timing Role: High-side or low-side switch providing precise current-limited actuation with real-time thermal margin monitoring.

Use Value: Integrated current and temperature sensing eliminates two external components per channel, reducing BOM count and improving long-term calibration stability.

Use Scenario: Controlling individual phases of brushless DC motors in EPS systems requiring fast response and fault detection.

IC Role / Device Role / Timing Role: Power stage MOSFET with embedded diagnostics - current sense enables overcurrent shutdown; temperature diode triggers thermal foldback.

Use Value: Avalanche ruggedness (215 mJ) withstands back-EMF spikes during motor commutation, increasing system reliability without snubber circuits.

Body Control Module (BCM) Lamp DriverBrake-by-Wire Actuator Interface

Use Scenario: Switching high-current LED headlamps or halogen fog lamps in BCMs where thermal management is limited by enclosure size.

IC Role / Device Role / Timing Role: Logic-level N-channel switch with Kelvin-source sensing for PWM dimming and open-load detection.

Use Value: RDSon = 8.2 mΩ @ 5 V allows direct microcontroller drive while minimizing conduction loss and self-heating at 15 A peak.

Use Scenario: Driving electro-hydraulic brake actuators requiring functional safety compliance and redundant current monitoring.

IC Role / Device Role / Timing Role: Safety-relevant power switch with dual independent sensing paths (current + temperature) for ASIL-B diagnostic coverage.

Use Value: Matched TSD and IS outputs enable cross-checked fault detection - e.g., simultaneous overcurrent and overtemperature flags confirm true failure vs. transient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4LF8AG40 V V(BR)DSS, no integrated sensing, TO-263-7 package, RDSon = 1.2 mΩ @ 10 VLacks current/temperature sensing; requires external shunt and thermal sensor for same functionalitySelect when higher voltage rating is unnecessary and lowest possible RDSon dominates design priority.
Infineon BSC014N06LS660 V V(BR)DSS, no integrated sensing, PG-TDSON-8 package, RDSon = 1.4 mΩ @ 10 VHigher RDSon at 5 V logic drive (~12 mΩ), no Kelvin source or TSD diodeChoose for cost-sensitive non-safety applications where sensing is implemented externally and footprint is constrained.

Compared with STL220N4LF8AG and BSC014N06LS6, BUK9C10-55BIT/A,11 trades slightly higher RDSon for monolithic integration of two critical automotive diagnostics - eliminating component count, layout complexity, and calibration drift across temperature, making it optimal for ASIL-B–capable systems where sensing integrity is mandatory.

Availability

BUK9C10-55BIT/A,11 is available at Aetrix Electronics and suitable for automotive powertrain control, electric power steering modules, and body electronics requiring stable component supply with AEC-Q101 compliance and long-term lifecycle support.

Supply support for BUK9C10-55BIT/A,11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and advanced packaging.

This device belongs to Nexperia's TrenchPLUS automotive MOSFET product line, engineered specifically for intelligent power switching in 12 V vehicle subsystems requiring embedded diagnostics, thermal resilience, and AEC-Q101 certification.

FAQ

What is the function of pin 4 (D) in the D2PAK-7 package?

Pin 4 is the internal drain connection, but it is not accessible externally in the SOT427 package per the mechanical drawing (Fig. 23). The drain terminal is routed solely through the mounting base (mb), which serves as the primary high-current drain path - ensuring low inductance and optimal thermal transfer to the heatsink.

How is the temperature sense diode calibrated for accurate junction temperature measurement?

The temperature sense diode exhibits a linear −6 mV/K coefficient (SF(TSD)) over −55 to +175 °C at IF = 250 µA, with VF(TSD) = 2.9 V at 25 °C. Calibration requires measuring forward voltage at two known temperatures to determine offset and slope, then applying linear interpolation - no trimming resistors or external compensation are needed due to monolithic matching with the power die.

Can the current sense output (pin 2) be used with standard op-amps?

Yes - the IS terminal delivers a clean, low-impedance current proportional to ID (Isense = ID / 11,000), referenced to the Kelvin source (pin 6). It interfaces directly with standard current-sense amplifiers (e.g., Texas Instruments INA240) or precision op-amp circuits, provided the sense resistor is placed between IS and KS to avoid ground loop errors.

Why does the datasheet specify "VGS = 5 V" RDSon separately from "VGS = 10 V" values?

Because BUK9C10-55BIT/A,11 is a logic-level MOSFET optimized for 5 V microcontroller drive: its RDSon = 8.2 mΩ @ 5 V enables full enhancement without gate boosters. The 7.5 mΩ @ 10 V value reflects marginal improvement at higher gate voltage - useful for thermal margin analysis but not required for functional operation in automotive 5 V systems.

BUK9C10-55BIT/A,11 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchPLUS
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
4667 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
194W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK-7

BUK9C10-55BIT/A,11 FAQ

1.How can I place an order for BUK9C10-55BIT/A,11 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9C10-55BIT/A,11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9C10-55BIT/A,11 reliable?

The price and inventory of BUK9C10-55BIT/A,11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9C10-55BIT/A,11 is usually 5 days.

3.What payment methods are accepted for BUK9C10-55BIT/A,11?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9C10-55BIT/A,11 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9C10-55BIT/A,11?

BUK9C10-55BIT/A,11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9C10-55BIT/A,11 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9C10-55BIT/A,11?

For technical support, including BUK9C10-55BIT/A,11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9C10-55BIT/A,11 requirements.

6.How does Aetrix verify that BUK9C10-55BIT/A,11 is sourced from the original manufacturer or authorized distributors?

All BUK9C10-55BIT/A,11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9C10-55BIT/A,11 meets industry standards.

7.What is the process for return or replacement of BUK9C10-55BIT/A,11?

All BUK9C10-55BIT/A,11 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9C10-55BIT/A,11, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9C10-55BIT/A,11 part is unused and in its original packaging.

Return procedure for BUK9C10-55BIT/A,11:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9C10-55BIT/A,11 Tags

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