Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK9E08-55B,127

Part No.:
BUK9E08-55B,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixBUK9E08-55B,127.pdf
Description:
MOSFET N-CH 55V 75A I2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,787

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK9E08-55B from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in I2PAK (SOT226) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 6.2 mΩ RDS(on) at VGS = 10 V and supports direct 5 V logic-level gate drive - deployed in automotive 12 V/24 V load switching, motor control, and solenoid drivers.

For engineers reviewing the BUK9E08-55B datasheet, BUK9E08-55B pinout, BUK9E08-55B application, or BUK9E08-55B equivalent, key selection criteria include its 55 V breakdown voltage, low 7.1 mΩ RDS(on) at 5 V gate drive, 352 mJ unclamped avalanche energy, thermal resistance of 0.74 K/W (junction-to-mounting base), and AEC-Q101 qualification for automotive critical systems.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-compatible gate threshold (1.1–2.0 V typical), enabling direct interface with microcontrollers and ASICs without level-shifting. Its internal drain-source diode supports freewheeling in inductive loads, with 0.85 V forward voltage at 25 A and 69 ns reverse recovery time.

The MOSFET operates within a -55 °C to +175 °C junction temperature range and features robust avalanche ruggedness (352 mJ), validated under unclamped inductive switching conditions (ID = 75 A, Vsup ≤ 55 V, RGS = 50 Ω). Thermal design is enabled by its low Rth(j-mb) of 0.74 K/W and mounting-base thermal path.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - Maximum drain-source blocking voltage; defines safe operation in 24 V automotive systems with transient spikes.
ID (continuous) 75 A at Tmb = 25 °C - Package-limited current; enables high-power switching without external heatsink in moderate-duty cycles.
RDS(on) 7.1 mΩ max at VGS = 5 V, ID = 25 A, Tj = 25 °C - Enables efficient 5 V logic-driven switching with <1.8 W conduction loss at 50 A.
EAS 352 mJ - Non-repetitive avalanche energy rating; supports reliable operation during inductive turn-off transients in motor/solenoid drives.
Rth(j-mb) 0.74 K/W - Junction-to-mounting base thermal resistance; allows direct PCB copper pour or heatsink attachment for thermal management.
VGS(th) 1.1–2.0 V typical - Gate threshold voltage range ensures reliable turn-on with standard 3.3 V or 5 V MCU outputs.
QGD 16 nC - Gate-drain charge; determines Miller plateau duration and influences switching speed and gate driver sizing.

Pinout & Package

Package: I2PAK (SOT226), plastic single-ended package with isolated mounting base electrically connected to the drain terminal. Designed for surface-mount or through-hole mounting with thermal pad soldered to PCB copper area.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Controls channel conduction; accepts 5 V logic-level drive; requires <100 nA leakage current at ±15 V bias.
2 (D) Drain Main high-side current path; internally bonded to mounting base for low-inductance, high-current routing and thermal conduction.
3 (S) Source Return path for load current; referenced to system ground in low-side switch configuration; carries full load current and diode reverse recovery charge.
Mounting Base (mb) Drain connection Electrically tied to drain; provides primary thermal path and mechanical anchoring; must be soldered to ≥100 mm² copper area for rated power dissipation.

Key Features

Feature Design Value
Logic-level gate drive compatibility Turns on fully with 5 V gate voltage - eliminates need for gate driver ICs in MCU-based automotive modules.
AEC-Q101 qualification Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages.
175 °C maximum junction temperature Enables operation in under-hood environments without derating in ambient temperatures up to 125 °C.
Low RDS(on) at 5 V drive 7.1 mΩ max ensures <1.8 W conduction loss at 50 A - reduces thermal stress and improves system efficiency over competing 5 V FETs.
Unclamped avalanche ruggedness 352 mJ rating supports robust inductive load switching without external snubbers in solenoid and motor control.

Applications

Automotive Body Control Module 12 V/24 V DC Motor Driver

Use Scenario: Switching headlamps, HVAC actuators, and window lift motors in modern vehicle BCMs.

IC Role / Device Role / Timing Role: Low-side power switch controlling inductive loads with PWM duty cycling up to 20 kHz.

Use Value: 7.1 mΩ RDS(on) at 5 V drive minimizes heat generation in space-constrained modules; AEC-Q101 compliance ensures field reliability.

Use Scenario: Driving brushed DC fans, radiator cooling pumps, and seat adjustment motors in passenger vehicles.

IC Role / Device Role / Timing Role: High-current, thermally robust power switch handling peak currents >400 A in pulsed operation.

Use Value: 352 mJ avalanche energy rating prevents failure during motor stall or sudden stop; 175 °C rating sustains performance in hot under-hood zones.

Truck & Bus 24 V Load Management Solenoid Actuator Interface

Use Scenario: Controlling air suspension valves, trailer lighting relays, and auxiliary power distribution in commercial vehicles.

IC Role / Device Role / Timing Role: High-voltage (up to 55 V) load switch managing intermittent 24 V loads with fast turn-on/turn-off response.

Use Value: 55 V VDS withstands ISO 7637-2 pulse 5a transients; 0.74 K/W Rth(j-mb) enables direct heatsinking on chassis-mounted PCBs.

Use Scenario: Driving fuel injectors, transmission shift solenoids, and brake actuation valves in powertrain systems.

IC Role / Device Role / Timing Role: Precision-controlled high-current switch with fast fall time (86 ns) and low QGD for accurate solenoid timing.

Use Value: 69 ns trr and 72 nC Qr minimize energy loss during diode commutation; low VSD (0.85 V) reduces power dissipation in freewheeling phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N5LF8AG 60 V VDS, 220 A ID, 2.2 mΩ RDS(on) @ 10 V - larger die, higher current, but requires 10 V gate for full spec; not logic-level optimized at 5 V. Better suited for high-current industrial inverters than automotive BCMs due to higher gate drive requirement and lack of AEC-Q101 certification. Select only if system uses 10 V gate drive and requires >100 A capability; avoid where 5 V MCU interface or automotive qualification is mandatory.
IRF1404ZLPbF 40 V VDS, 180 A ID, 3.8 mΩ RDS(on) @ 10 V - lower voltage rating, no AEC-Q101 qualification, higher RDS(on) at 5 V (~10.5 mΩ). Targeted at consumer/commercial power supplies; unsuitable for automotive 24 V systems with load dump transients exceeding 40 V. Acceptable only in non-automotive 12 V applications with relaxed reliability requirements and no transient voltage exposure above 40 V.

Compared with STL220N5LF8AG and IRF1404ZLPbF, the BUK9E08-55B uniquely combines AEC-Q101 qualification, true 5 V logic-level turn-on, 55 V rating for 24 V automotive robustness, and 7.1 mΩ RDS(on) at 5 V - making it the only drop-in solution for safety-critical, thermally constrained automotive power switching.

Availability

BUK9E08-55B is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V DC motor drivers, and solenoid actuator interfaces requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for BUK9E08-55B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.

The BUK9E series belongs to Nexperia's automotive-qualified TrenchMOS logic-level power MOSFET product line, engineered specifically for robust, thermally efficient switching in 12 V and 24 V automotive subsystems.

FAQ

Is BUK9E08-55B suitable for high-frequency PWM motor control?

Yes - with 123 ns rise time, 86 ns fall time, and 16 nC QGD, it supports PWM frequencies up to 50 kHz in brushed DC motor drives. Its low RDS(on) and 0.74 K/W thermal resistance maintain efficiency and junction temperature stability under sustained switching.

What is the maximum safe operating temperature for PCB layout?

The mounting base must remain ≤100 °C to sustain 75 A continuous current per Figure 1. For long-term reliability, keep Tmb ≤85 °C using ≥100 mm² 2-oz copper pour and thermal vias - this ensures Tj stays below 150 °C at full load.

Does BUK9E08-55B require a gate resistor for automotive EMI compliance?

A 10 Ω gate resistor is recommended (per datasheet test condition) to limit dV/dt and suppress ringing during switching. This value balances EMI reduction with acceptable 29 ns turn-on delay and 131 ns turn-off delay in 12 V/24 V systems.

Can BUK9E08-55B replace older BUK9508-55B in existing designs?

Yes - identical pinout, package (SOT226), and electrical specs; BUK9E08-55B supersedes BUK9508-55B with improved RDS(on) consistency and updated AEC-Q101 requalification. No layout or firmware changes are required for drop-in replacement.

BUK9E08-55B,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
5280 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
203W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

BUK9E08-55B,127 FAQ

1.How can I place an order for BUK9E08-55B,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9E08-55B,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9E08-55B,127 reliable?

The price and inventory of BUK9E08-55B,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9E08-55B,127 is usually 5 days.

3.What payment methods are accepted for BUK9E08-55B,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9E08-55B,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9E08-55B,127?

BUK9E08-55B,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9E08-55B,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9E08-55B,127?

For technical support, including BUK9E08-55B,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9E08-55B,127 requirements.

6.How does Aetrix verify that BUK9E08-55B,127 is sourced from the original manufacturer or authorized distributors?

All BUK9E08-55B,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9E08-55B,127 meets industry standards.

7.What is the process for return or replacement of BUK9E08-55B,127?

All BUK9E08-55B,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9E08-55B,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9E08-55B,127 part is unused and in its original packaging.

Return procedure for BUK9E08-55B,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9E08-55B,127 Tags

  • BUK9E08-55B,127
  • BUK9E08-55B,127 PDF
  • BUK9E08-55B,127 Datasheet
  • BUK9E08-55B,127 Specifications
  • BUK9E08-55B,127 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK9E08-55B,127
  • Buy BUK9E08-55B,127
  • BUK9E08-55B,127 Price
  • BUK9E08-55B,127 Distributor
  • BUK9E08-55B,127 Supplier
  • BUK9E08-55B,127 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER