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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BUK9E2R8-60E,127

Name: BUK9E2R8-60E,127
Brand: NXP Semiconductors
SKU: BUK9E2R8-60E,127
Price: 2.40 USD
Availability: InStock
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Part No.:: BUK9E2R8-60E,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: BUK9E2R8-60E,127.pdf

Description:: MOSFET N-CH 60V 120A I2PAK

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Product details

Overview

BUK9E2R8-60E from Nexperia is an AEC-Q101-qualified N-channel TrenchMOS logic-level power MOSFET in I2PAK (SOT226) package, rated for 60 V V_DS, 120 A continuous drain current at T_mb = 25 °C, and R_DS(on) = 2.2 mΩ (typ) at V_GS = 5 V and T_j = 25 °C. It serves as a high-current, thermally robust switching element in automotive 12 V systems including start-stop micro-hybrid control and transmission actuation.

For engineers reviewing the BUK9E2R8-60E datasheet, BUK9E2R8-60E pinout, BUK9E2R8-60E application, or BUK9E2R8-60E equivalent, this page delivers verified technical context, validated pin functions, confirmed automotive-grade thermal and avalanche performance, and real-world selection guidance for high-reliability power switching designs.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) with true logic-level gate drive compatibility-V_GS(th) remains ≥0.5 V even at T_j = 175 °C, enabling direct interface with 3.3 V/5 V controllers. Its SOT226 package integrates a mounting base electrically connected to the drain, delivering R_th(j-mb) = 0.43 K/W for efficient heatsink coupling.

The device is fully rated for repetitive avalanche operation (EDS(AL)S = 655 mJ), supports peak drain currents up to 952 A (tp ≤ 10 µs), and features integrated source-drain diode with t_rr = 53 ns and Q_r = 98 nC-critical for snubberless inductive load switching in automotive solenoid and motor control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 12 V automotive battery systems under load dump conditions.
I_D (continuous)	120 A at T_mb = 25 °C - Package-limited current capacity enabling high-power switching without external parallel devices.
R_DS(on)	2.2 mΩ (typ) at V_GS = 5 V, T_j = 25 °C - Low conduction loss supporting <1 W dissipation at 20 A, reducing thermal design burden.
T_j max	175 °C - Extended junction temperature rating allows operation in engine bay environments without derating penalties.
Avalanche energy	655 mJ (non-repetitive, unclamped) - Confirmed ruggedness against inductive kickback in transmission valve and fuel injector drivers.
Q_GD	41.2 nC - Gate-drain charge value directly influencing Miller plateau duration and switching speed in hard-switched topologies.
t_rr	53 ns - Fast reverse recovery time of integrated body diode minimizes switching losses in freewheeling paths.

Pinout & Package

The BUK9E2R8-60E uses the I2PAK (SOT226) plastic single-ended package with a metal mounting base thermally and electrically tied to the drain terminal. This low-profile TO-262 variant enables high-power density mounting on heatsinks while maintaining mechanical robustness for automotive vibration requirements.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Logic-level input controlling channel conduction; threshold voltage ≥0.5 V at 175 °C ensures reliable turn-on across full automotive temperature range.
2 (D)	Drain	Main high-side power path; internally bonded to mounting base for low-inductance, low-thermal-resistance connection to heatsink.
3 (S)	Source	Power return node and reference for gate drive; internal source inductance LS = 7.5 nH impacts high-speed switching stability.
Mounting base (mb)	Drain (electrically connected)	Primary thermal interface; R_th(j-mb) = 0.43 K/W enables >300 W dissipation with modest heatsink thermal resistance.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated reliability for automotive applications including engine control, transmission, and ADAS subsystems.
Repetitive avalanche rating	Enables robust operation in inductive load switching without external protection circuits in solenoid and motor drivers.
True logic-level gate	V_GS(th) ≥ 0.5 V at 175 °C ensures consistent turn-on with standard 3.3 V/5 V microcontrollers across full operating temperature range.
175 °C maximum junction temperature	Supports placement in high-ambient zones (e.g., near engines or under-hood ECUs) without thermal derating.
Low R_DS(on) × Q_G figure-of-merit	Optimized trade-off between conduction loss (2.2 mΩ) and gate drive energy (120 nC total charge) for high-efficiency PWM control.

Applications

Start-Stop Micro-Hybrid Control	Transmission Solenoid Driver
Use Scenario: High-cycle switching of starter motor engagement/disengagement during engine restart events in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: Main power switch controlling battery-to-starter connection; must sustain 120 A pulses with <10 µs turn-off to prevent gear clash. Use Value: Repetitive avalanche rating and 952 A peak current capability eliminate need for external clamping, while 53 ns t_rr minimizes freewheeling losses during rapid polarity reversal.	Use Scenario: Precision current regulation for electro-hydraulic transmission control valves requiring fast, stable on/off transitions. IC Role / Device Role / Timing Role: Low-loss, high-speed power switch interfaced with PWM controller; gate drive optimized for 5 V logic levels. Use Value: 2.2 mΩ R_DS(on) reduces resistive heating during sustained 30–50 A coil drive, and 175 °C rating ensures reliability in sealed transmission housing environments.
12 V Automotive Lighting Control	Electric Power Steering (EPS) Motor Phase Switch
Use Scenario: PWM dimming and overcurrent protection for high-brightness LED headlamps and matrix lighting modules. IC Role / Device Role / Timing Role: High-side switch managing up to 10 A per channel with fast rise/fall times (<120 ns) to suppress EMI during modulation. Use Value: Low Q_GD (41.2 nC) and tight R_DS(on) tolerance (2.2–2.8 mΩ) ensure consistent brightness control and thermal predictability across production lots.	Use Scenario: Half-bridge phase leg in 12 V EPS motor inverters, handling bidirectional current up to 80 A during assist torque generation. IC Role / Device Role / Timing Role: N-channel high-side switch paired with complementary low-side FET; requires robust body diode recovery for regenerative braking commutation. Use Value: Integrated source-drain diode with 98 nC Q_r and 53 ns t_rr enables efficient freewheeling without external Schottky, reducing BOM count and PCB area.

Start-Stop Micro-Hybrid Control

Transmission Solenoid Driver

Use Scenario: High-cycle switching of starter motor engagement/disengagement during engine restart events in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Main power switch controlling battery-to-starter connection; must sustain 120 A pulses with <10 µs turn-off to prevent gear clash.

Use Value: Repetitive avalanche rating and 952 A peak current capability eliminate need for external clamping, while 53 ns t_rr minimizes freewheeling losses during rapid polarity reversal.

Use Scenario: Precision current regulation for electro-hydraulic transmission control valves requiring fast, stable on/off transitions.

IC Role / Device Role / Timing Role: Low-loss, high-speed power switch interfaced with PWM controller; gate drive optimized for 5 V logic levels.

Use Value: 2.2 mΩ R_DS(on) reduces resistive heating during sustained 30–50 A coil drive, and 175 °C rating ensures reliability in sealed transmission housing environments.

12 V Automotive Lighting Control

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: PWM dimming and overcurrent protection for high-brightness LED headlamps and matrix lighting modules.

IC Role / Device Role / Timing Role: High-side switch managing up to 10 A per channel with fast rise/fall times (<120 ns) to suppress EMI during modulation.

Use Value: Low Q_GD (41.2 nC) and tight R_DS(on) tolerance (2.2–2.8 mΩ) ensure consistent brightness control and thermal predictability across production lots.

Use Scenario: Half-bridge phase leg in 12 V EPS motor inverters, handling bidirectional current up to 80 A during assist torque generation.

IC Role / Device Role / Timing Role: N-channel high-side switch paired with complementary low-side FET; requires robust body diode recovery for regenerative braking commutation.

Use Value: Integrated source-drain diode with 98 nC Q_r and 53 ns t_rr enables efficient freewheeling without external Schottky, reducing BOM count and PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 220 A, R_DS(on) = 1.6 mΩ @ 10 V; requires 10 V gate drive for full spec; not AEC-Q101 qualified.	Better conduction loss at higher gate voltage but unsuitable for direct 5 V logic drive or automotive qualification-critical designs.	Select only for non-automotive industrial 12 V systems where gate drive voltage ≥8 V is available and AEC-Q101 is not required.
IRF1405ZLPbF	55 V, 169 A, R_DS(on) = 3.3 mΩ @ 10 V; logic-level capable but V_GS(th) min = 1.0 V at 25 °C, degrades significantly above 125 °C; no avalanche rating.	Limited high-temperature gate threshold stability and no avalanche ruggedness make it unsuitable for start-stop or transmission solenoid use.	Consider only for cost-sensitive 12 V consumer applications with ambient <85 °C and no inductive switching stress.

Compared with STL220N6F7 and IRF1405ZLPbF, the BUK9E2R8-60E uniquely combines AEC-Q101 qualification, guaranteed 0.5 V V_GS(th) at 175 °C, and 655 mJ avalanche energy-making it the only option among the three qualified for safety-critical automotive power switching where thermal margin and fault robustness are non-negotiable.

Availability

BUK9E2R8-60E is available at Aetrix Electronics and suitable for automotive power distribution, start-stop micro-hybrid systems, and transmission control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK9E2R8-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 with deep expertise in automotive-qualified components.

The BUK9E2R8-60E belongs to Nexperia's TrenchMOS logic-level automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle networks-including engine management, chassis control, and electrified powertrain subsystems.

FAQ

What is the maximum continuous drain current rating for BUK9E2R8-60E?

The BUK9E2R8-60E is rated for 120 A continuous drain current at mounting base temperature (T_mb) = 25 °C, as limited by its I2PAK (SOT226) package thermal capability. At T_mb = 100 °C, the current remains 120 A due to package limitation-not silicon-per Figure 1 in the datasheet. Derating applies beyond 100 °C.

Is BUK9E2R8-60E suitable for 5 V logic-level gate drive?

Yes, the BUK9E2R8-60E is explicitly designed as a logic-level MOSFET with V_GS(th) ≥ 0.5 V at T_j = 175 °C, ensuring reliable turn-on using standard 5 V microcontroller outputs. Its R_DS(on) = 2.2 mΩ (typ) is specified at V_GS = 5 V and T_j = 25 °C, confirming full enhancement at 5 V.

Does BUK9E2R8-60E have avalanche capability?

Yes, the BUK9E2R8-60E is repetitively avalanche-rated with a non-repetitive drain-source avalanche energy (EDS(AL)S) of 655 mJ under defined test conditions (ID = 120 A, V_sup ≤ 60 V, R_GS = 50 Ω). This ruggedness is validated per AEC-Q101 and supports reliable operation in inductive load switching without external snubbers.

What is the thermal resistance from junction to mounting base for BUK9E2R8-60E?

The BUK9E2R8-60E has a maximum thermal resistance R_th(j-mb) of 0.43 K/W from junction to mounting base, measured under specified test conditions. This low value reflects the direct thermal path through the metal mounting base-critical for high-power automotive applications where heatsink interface dominates total thermal impedance.

Which automotive standards does BUK9E2R8-60E comply with?

The BUK9E2R8-60E is qualified to AEC-Q101 for stress testing and reliability, and designed for use in automotive applications per ISO/TS 16949-compliant manufacturing. Its 175 °C junction rating, 12 V system compatibility, and repetitive avalanche capability align with functional safety requirements for power switching in engine control, transmission, and chassis systems.

BUK9E2R8-60E,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 17450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 349W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

BUK9E2R8-60E,127 FAQ

1.How can I place an order for BUK9E2R8-60E,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9E2R8-60E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9E2R8-60E,127 reliable?

The price and inventory of BUK9E2R8-60E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9E2R8-60E,127 is usually 5 days.

3.What payment methods are accepted for BUK9E2R8-60E,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9E2R8-60E,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9E2R8-60E,127?

BUK9E2R8-60E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9E2R8-60E,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9E2R8-60E,127?

For technical support, including BUK9E2R8-60E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9E2R8-60E,127 requirements.

6.How does Aetrix verify that BUK9E2R8-60E,127 is sourced from the original manufacturer or authorized distributors?

All BUK9E2R8-60E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9E2R8-60E,127 meets industry standards.

7.What is the process for return or replacement of BUK9E2R8-60E,127?

All BUK9E2R8-60E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9E2R8-60E,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9E2R8-60E,127 part is unused and in its original packaging.

Return procedure for BUK9E2R8-60E,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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