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NXP Semiconductors BUK9E6R1-100E,127
- Part No.:
- BUK9E6R1-100E,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
BUK9E6R1-100E,127.pdf
- Description:
- MOSFET N-CH 100V 120A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,775
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Product details
Overview
BUK9E6R1-100E from Nexperia is an AEC-Q101 qualified N-channel TrenchMOS logic-level power MOSFET in I2PAK (SOT226) package, rated for 100 V VDS, 120 A continuous drain current at Tmb = 25 °C, and 6.1 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It serves as a high-current, thermally robust switching element in automotive power control circuits.
For engineers reviewing the BUK9E6R1-100E datasheet, BUK9E6R1-100E pinout, BUK9E6R1-100E application, or BUK9E6R1-100E equivalent, this page delivers verified specifications, validated pin functions, automotive-grade thermal and avalanche performance data, and real-world use context for 12V–48V vehicle systems.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance with true logic-level gate drive compatibility-VGS(th) remains ≥0.5 V even at Tj = 175 °C. Its mounting base is internally connected to the drain, enabling direct heatsink attachment and minimizing thermal resistance (Rth(j-mb) = 0.43 K/W).
The MOSFET supports repetitive avalanche operation with EDS(AL)S = 387 mJ (unclamped, single-pulse), and features integrated source-drain diode with trr = 70 ns and Qr = 202 nC-critical for snubberless inductive load switching in transmission and start-stop systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; supports 48V automotive bus with margin for transients. |
| ID (continuous) | 120 A at Tmb = 25 °C - Package-limited current rating; enables high-power motor/solenoid drivers without external parallel devices. |
| RDS(on) | 4.85–6.1 mΩ at VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 40 A, reducing thermal design burden. |
| Tj max | 175 °C - Extended junction temperature rating allows operation in under-hood environments without derating. |
| QGD | 51 nC - Low gate-drain charge improves switching efficiency and reduces Miller-induced turn-off delay in hard-switched topologies. |
| Rth(j-mb) | 0.43 K/W - Ultra-low junction-to-mounting-base thermal resistance enables direct PCB heatsinking or compact metal-core mounting. |
| Avalanche energy | 387 mJ (single-pulse, unclamped) - Confirmed ruggedness for inductive load interruption without external clamping. |
Pinout & Package
I2PAK (SOT226) package with isolated leads and integral metal mounting base electrically connected to the drain terminal. Designed for surface-mount assembly with through-hole heatsink interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; threshold voltage ≥0.5 V up to 175 °C ensures reliable turn-on with 3.3 V/5 V microcontrollers. |
| 2 (D) | Drain | Main high-side power path; internally bonded to mounting base for low-inductance, high-current routing and thermal conduction. |
| 3 (S) | Source | Power return node; referenced to system ground in low-side switch configurations; carries full load current. |
| Mounting base (mb) | Drain (common) | Electrically tied to Pin 2 (D); provides mechanical anchoring and primary thermal path to heatsink or copper plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine bay and transmission control modules per stress test requirements. |
| Repetitive avalanche rating | Enables robust operation in unclamped inductive switching (e.g., solenoids, fuel injectors) without external protection. |
| 175 °C junction rating | Permits full-rated performance in thermally constrained locations such as near engines or inverters without derating. |
| True logic-level gate | VGS(th) ≥ 0.5 V at 175 °C ensures guaranteed turn-on with standard 5 V MCU GPIOs across full temperature range. |
| Low RDS(on) × QG figure of merit | ~650 Ω·nC - Balances conduction and switching losses for high-efficiency 10–100 kHz PWM control in DC-DC and motor drives. |
Applications
| Start-Stop Micro-Hybrid Control | Transmission Solenoid Driver |
|---|---|
|
Use Scenario: High-duty-cycle switching of starter motor engagement and battery isolation during engine restart. IC Role / Device Role / Timing Role: Primary power switch controlling 12V/48V starter relay and bidirectional energy flow between battery and starter. Use Value: 120 A continuous rating and 349 W power dissipation support repeated cranking pulses; 175 °C rating withstands under-hood ambient spikes. |
Use Scenario: Precision PWM control of hydraulic solenoids in automatic transmission valve bodies. IC Role / Device Role / Timing Role: Low-side driver delivering fast, jitter-free current pulses (up to 576 A peak) to solenoid coils with minimal thermal drift. Use Value: 51 nC QGD and 70 ns trr enable clean 10–20 kHz switching; avalanche ruggedness eliminates need for external flyback diodes. |
| 12V/24V Motor Control Module | 48V Mild-Hybrid Power Distribution |
|
Use Scenario: Fan, pump, and wiper motor control in passenger compartment and chassis systems. IC Role / Device Role / Timing Role: High-current, thermally stable switch interfacing MCU PWM outputs to brushed DC motors. Use Value: 6.1 mΩ RDS(on) limits I²R loss to <3 W at 25 A; SOT226 package allows direct bolt-down heatsinking on aluminum enclosures. |
Use Scenario: Load switching and fault isolation in 48V onboard networks powering e-compressors, active suspension, and DC-DC converters. IC Role / Device Role / Timing Role: Main distribution switch with overcurrent and thermal self-protection capability in high-voltage power domains. Use Value: 100 V VDS provides 2× safety margin over 48V nominal; 387 mJ avalanche energy absorbs load dump transients without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, 3.0 mΩ @ 10 V; requires 10 V gate drive for full rating; not AEC-Q101 qualified. | Better conduction loss at higher gate voltage; unsuitable for automotive qualification-critical designs. | Select only for non-automotive industrial motor drives where 10 V gate drive is available and qualification is not required. |
| IRF1405PBF | 55 V, 169 A, 5.3 mΩ @ 10 V; TO-220 package; no AEC-Q101 or 175 °C rating. | Limited to 12V/24V systems; lacks thermal and reliability validation for automotive under-hood use. | Use only in cost-sensitive, non-automotive 24V applications where board space permits TO-220 and qualification is unnecessary. |
Compared with STL220N10F7 and IRF1405PBF, the BUK9E6R1-100E uniquely combines AEC-Q101 qualification, 175 °C operation, true 5 V logic-level drive, and I2PAK thermal performance-making it the only drop-in solution for production automotive power switching where reliability, thermal headroom, and gate drive simplicity are mandatory.
Availability
BUK9E6R1-100E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control units, and 48V mild-hybrid power distribution requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for BUK9E6R1-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.
The BUK9E6R1-100E belongs to Nexperia's TrenchMOS automotive logic-level FET product line, engineered specifically for thermally demanding, safety-critical power switching in 12V–48V vehicle electrical architectures.
FAQ
What is the maximum continuous drain current for BUK9E6R1-100E at 100 °C mounting base temperature?
The BUK9E6R1-100E supports 103 A continuous drain current at Tmb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the I2PAK package and ensures safe operation without exceeding the 175 °C maximum junction temperature. The BUK9E6R1-100E maintains stable RDS(on) performance across this range due to its TrenchMOS structure and 175 °C-rated silicon.
Is BUK9E6R1-100E suitable for 48V automotive systems with load dump transients?
Yes, the BUK9E6R1-100E is explicitly designed for 48V automotive systems. Its 100 V VDS rating provides essential margin against ISO 16750-2 load dump transients (up to 60 V), and its 387 mJ unclamped avalanche energy rating allows it to safely absorb transient energy without external clamping. The BUK9E6R1-100E also meets AEC-Q101 requirements for surge immunity and thermal cycling.
Does BUK9E6R1-100E require a gate driver IC when driven by a 3.3 V microcontroller?
No, the BUK9E6R1-100E is a true logic-level MOSFET with VGS(th) ≥ 0.5 V at 175 °C, ensuring reliable turn-on with 3.3 V or 5 V GPIOs. However, for optimal switching speed and reduced gate ringing, a low-impedance gate driver (e.g., TC4427) is recommended in high-frequency PWM applications. The BUK9E6R1-100E's 133 nC total gate charge necessitates sufficient drive strength to minimize transition losses.
What is the thermal resistance from junction to mounting base for BUK9E6R1-100E?
The BUK9E6R1-100E has a maximum thermal resistance of Rth(j-mb) = 0.43 K/W, as stated in Table 6 (Thermal characteristics). This ultra-low value results from the direct die-to-mounting-base construction of the I2PAK (SOT226) package and enables efficient heat transfer to external heatsinks or copper planes. The BUK9E6R1-100E achieves this while maintaining electrical isolation of gate and source leads.
Can BUK9E6R1-100E replace older NXP BUK9Y series MOSFETs in existing designs?
The BUK9E6R1-100E is not a direct pin-compatible replacement for BUK9Y-series parts (e.g., BUK9Y6R1-100E), which use different packages (TO-220AB vs. I2PAK) and have distinct thermal and electrical profiles. While both share 100 V rating and TrenchMOS technology, the BUK9E6R1-100E's lower RDS(on), improved thermal resistance, and updated AEC-Q101 compliance require layout review. Redesign is advised-not drop-in substitution-for BUK9E6R1-100E integration.
BUK9E6R1-100E,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 133 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17460 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 349W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
BUK9E6R1-100E,127 FAQ
1.How can I place an order for BUK9E6R1-100E,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9E6R1-100E,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9E6R1-100E,127 reliable?
The price and inventory of BUK9E6R1-100E,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9E6R1-100E,127 is usually 5 days.
3.What payment methods are accepted for BUK9E6R1-100E,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9E6R1-100E,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK9E6R1-100E,127?
BUK9E6R1-100E,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9E6R1-100E,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9E6R1-100E,127?
For technical support, including BUK9E6R1-100E,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9E6R1-100E,127 requirements.
6.How does Aetrix verify that BUK9E6R1-100E,127 is sourced from the original manufacturer or authorized distributors?
All BUK9E6R1-100E,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9E6R1-100E,127 meets industry standards.
7.What is the process for return or replacement of BUK9E6R1-100E,127?
All BUK9E6R1-100E,127 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9E6R1-100E,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9E6R1-100E,127 part is unused and in its original packaging.
Return procedure for BUK9E6R1-100E,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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