Nexperia USA Inc. BUK9K13-40HX

Overview

BUK9K13-40HX from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 40 V drain-source voltage, 13 mΩ R_DS(on) at V_GS = 4.5 V and T_j = 25 °C, and qualified to AEC-Q101 for automotive use up to 175 °C junction temperature. It delivers 42 A continuous drain current at T_mb = 25 °C and supports repetitive avalanche operation in 12 V/24 V/48 V automotive power control systems.

For engineers reviewing the BUK9K13-40HX datasheet, BUK9K13-40HX pinout, BUK9K13-40HX application, or BUK9K13-40HX equivalent, key selection criteria include its dual-channel layout, low 4.5 V gate drive compatibility, gull-wing lead form factor for AOI inspection, thermal resistance of 3.23 K/W (j-mb), and validated performance in transmission control and DC-DC conversion circuits.

Technical Context

This device integrates two independent N-channel Trench 9 superjunction MOSFETs in a single LFPAK56D package, enabling space-efficient dual-switching topologies such as half-bridge drivers or redundant load switches. Its gate threshold voltage ranges from 1.5 V (min) to 2.6 V (max) across -55 °C to 175 °C, ensuring reliable turn-on with standard 3.3 V or 5 V logic controllers.

The MOSFET features fully characterized dynamic parameters including Q_G(tot) = 13 nC (typ), Q_GD = 1.8 nC (typ) at V_GS = 5 V, and C_iss = 848 pF (typ), supporting fast switching with low gate drive loss. Its source-drain diode exhibits t_rr = 21.5 ns (typ) and Q_r = 16.2 nC (typ), suitable for synchronous rectification and freewheeling in high-frequency converters.

Key Specifications

Pinout & Package

LFPAK56D (SOT1205) is an 8-lead, single-ended surface-mount package with gull-wing leads and integrated copper clip for enhanced thermal and electrical performance. Mounting base (mbk725) serves as common thermal interface for both FETs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with BUK9K13-40HX, both alternatives lack integrated dual-channel topology and AEC-Q101 validation at 175 °C - making them unsuitable for automotive transmission or safety-critical motor control where channel co-location, thermal coupling, and qualification traceability are mandatory.

Availability

BUK9K13-40HX is available at Aetrix Electronics and suitable for automotive motor control, transmission actuation, lamp/solenoid drive, and 48 V DC-DC conversion requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for BUK9K13-40HX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

The BUK9K series belongs to Nexperia's AEC-Q101-qualified logic-level MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive power switching applications requiring robustness and manufacturability.

FAQ

What is the maximum continuous drain current for BUK9K13-40HX at 100 °C mounting base temperature?

The datasheet specifies 30 A continuous drain current at T_mb = 100 °C and V_GS = 10 V. This reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures, and aligns with Fig. 2 in the product data sheet. PCB copper area, airflow, and heatsinking directly impact achievable current in practice.

Does BUK9K13-40HX support 3.3 V microcontroller gate drive?

Yes - its gate threshold voltage is specified from 1.5 V (min) to 2.6 V (max) at T_j = 25 °C, and remains functional down to 0.7 V at 175 °C. At V_GS = 3.3 V, R_DS(on) is ≤18 mΩ (max) at T_j = 175 °C, enabling reliable switching in low-voltage automotive domains like body control modules.

How is the dual-drain pin configuration (pins 5/6 and 7/8) implemented internally?

Pins 5 & 6 are internally bonded to the same drain node of FET2; pins 7 & 8 are internally bonded to the same drain node of FET1. This dual-pin per drain reduces effective lead inductance and current density, improving EMI performance and thermal distribution - confirmed in the package outline (Fig. 17) and pinning table.

Is the source-drain diode body diode rated for continuous conduction in synchronous rectifier applications?

Yes - the diode is characterized for I_S = 42 A continuous at T_mb = 25 °C and I_SM = 169 A pulsed, with t_rr = 21.5 ns and Q_r = 16.2 nC. These values are measured under standardized conditions (IS = 10 A, dI_S/dt = −100 A/µs) and support high-frequency synchronous rectification in buck converters up to 1 MHz.