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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Nexperia USA Inc. BUK9K13-60RAX

Name: BUK9K13-60RAX
Brand: Nexperia USA Inc.
SKU: BUK9K13-60RAX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK9K13-60RAX

Manufacturer:: Nexperia USA Inc.

Category:: FET, MOSFET Arrays

Package:: SOT-1205, 8-LFPAK56

Datasheet:: BUK9K13-60RAX.pdf

Description:: MOSFET 2N-CH 60V 40A LFPAK56D

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Product details

Overview

BUK9K13-60RA from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 60 V drain-source voltage, 12.5 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, and qualified to AEC-Q101 for automotive use up to 175 °C junction temperature. It delivers 40 A continuous drain current at T_mb = 25 °C and features repetitive avalanche ruggedness tested to 1 billion events with ≤30 °C junction temperature rise - enabling robust operation in engine control and transmission switching circuits.

For engineers reviewing the BUK9K13-60RA datasheet, BUK9K13-60RA pinout, BUK9K13-60RA application, or BUK9K13-60RA equivalent, key selection criteria include its dual-channel LFPAK56D layout, 60 V/12.5 mΩ logic-level drive capability, AEC-Q101 qualification, repetitive avalanche rating, and thermal resistance of 2.36 K/W (junction-to-mounting base).

Technical Context

This dual MOSFET integrates two independent N-channel silicon dies in a single LFPAK56D copper-clip package, supporting synchronous or independent switching in high-reliability automotive power stages. Its gate threshold voltage ranges from 1.4 V (min) to 2.45 V (max) across temperature, enabling reliable turn-on with standard 5 V microcontroller outputs.

The device employs Application Specific FET (ASFET) silicon optimized for repetitive unclamped inductive switching, with validated E_DS(AL)R = 75.2 mJ per event and E_DS(AL)S = 82 mJ for single-pulse avalanche. Thermal design is enabled by low R_th(j-mb) = 2.36 K/W and gull-wing leads compatible with automated optical inspection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V/48 V automotive battery rail protection and load switching
R_DS(on)	12.5 mΩ @ V_GS = 5 V, T_j = 25 °C - Low conduction loss enabling <1 W dissipation at 40 A continuous operation
I_D	40 A @ T_mb = 25 °C - Sustained current capability suitable for high-power solenoid and motor driver stages
E_DS(AL)R	75.2 mJ - Repetitive avalanche energy per event, validated for ≥1 billion cycles with ≤30 °C T_j rise
R_th(j-mb)	2.36 K/W - Enables efficient heat transfer to PCB copper pour or heatsink, critical for under-hood thermal management
Q_GD	7.9 nC @ V_DS = 48 V, V_GS = 5 V - Gate-drain charge determining switching speed and Miller-effect immunity in hard-switched topologies
V_GS(th)	1.4–2.1 V @ T_j = 25 °C - Ensures full enhancement with 3.3 V or 5 V logic-level drivers without gate boosting

Pinout & Package

LFPAK56D (SOT1205) is a dual-channel surface-mount package featuring copper-clip interconnects, gull-wing leads, and an exposed mounting base for low thermal resistance. Dimensions: 4.95 × 5.30 × 1.02 mm (L × W × H), with 8 terminals arranged in dual-source/gate/drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
1	S1	Source terminal for FET1 - connects to low-side return path; electrically isolated from S2
2	G1	Gate terminal for FET1 - controls turn-on/turn-off of first channel independently
3	S2	Source terminal for FET2 - separate return path for second channel; enables half-bridge or dual-load isolation
4	G2	Gate terminal for FET2 - allows asynchronous or complementary control of second channel
5, 6	D2	Drain terminals for FET2 - paralleled internally for current sharing and lower inductance
7, 8	D1	Drain terminals for FET1 - paralleled internally to reduce package parasitic inductance and improve dI/dt handling

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use at T_j = 175 °C - ensures reliability in engine bay and transmission control environments
Repetitive avalanche rating	Tested to 1 billion events with ≤30 °C T_j rise - eliminates need for external snubbers in inductive load switching
LFPAK56D copper-clip construction	R_th(j-mb) = 2.36 K/W and high power density - supports >64 W total dissipation with minimal footprint
Gull-wing lead form	Enables AOI compatibility and high-yield reflow soldering - reduces manufacturing defects in automotive production lines
Logic-level gate drive	V_GS(th) = 1.4–2.1 V @ 25 °C - eliminates gate driver IC requirement when driven directly from MCU GPIO

Applications

Engine Control Unit (ECU)

Transmission Control Module (TCM)

Use Scenario: Switching fuel injectors and ignition coils in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Dual-channel high-side/low-side switch managing pulsed inductive loads with precise timing and energy recovery.

Use Value: Repetitive avalanche ruggedness absorbs coil flyback energy without clamping diodes, reducing BOM count and improving system reliability over 15-year vehicle lifetime.

Use Scenario: Controlling solenoid valves and actuators in automatic transmission hydraulic control units.

IC Role / Device Role / Timing Role: Dual N-channel switch delivering synchronized or independent actuation signals with fast turn-on (<13 ns td(on)) and low R_DS(on).

Use Value: 12.5 mΩ on-resistance minimizes I²R heating during sustained 30 A duty cycles, maintaining stable performance at 175 °C under-hood temperatures.

Electric Power Steering (EPS)

Body Control Module (BCM)

Use Scenario: Driving brushless motor phases and assist torque sensors in 48 V EPS systems.

IC Role / Device Role / Timing Role: Half-bridge leg component enabling PWM-controlled motor commutation with low switching losses.

Use Value: Q_GD = 7.9 nC and C_iss = 2215–2953 pF support efficient 20–50 kHz switching while limiting gate drive power and EMI generation.

Use Scenario: Managing auxiliary loads including HVAC blowers, seat heaters, and lighting modules in 12 V/24 V architectures.

IC Role / Device Role / Timing Role: Dual-channel protected load switch providing independent ON/OFF control and short-circuit detection capability.

Use Value: Dual die isolation prevents fault propagation between loads; AEC-Q101 qualification ensures zero-defect operation across 10,000+ thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N06LS6	Single-channel 60 V, 1.4 mΩ MOSFET in SuperSO8; no repetitive avalanche rating; R_th(j-mb) = 3.0 K/W	Requires external avalanche protection circuitry; not qualified for repetitive inductive switching	Select only for non-avalanche, high-current DC applications where dual-channel integration is unnecessary
ON Semiconductor NTMFS5C675NL	Dual-channel 60 V, 13.5 mΩ in Power56; AEC-Q101 qualified but limited to 500 million avalanche cycles; R_th(j-mb) = 2.7 K/W	Lower cycle endurance and higher thermal resistance reduce margin in high-duty-cycle engine control	Acceptable for BCM or lighting loads, but not recommended for ECU/TCM where 1B-cycle validation is required

Compared with BSC014N06LS6 and NTMFS5C675NL, BUK9K13-60RA uniquely combines dual-channel integration, 1-billion-cycle repetitive avalanche validation, lowest R_th(j-mb), and gull-wing manufacturability - making it the only drop-in solution for AEC-Q101-compliant, high-reliability automotive power switching where both channel independence and ruggedness are mandatory.

Availability

BUK9K13-60RA is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and electric power steering systems requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for BUK9K13-60RA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

BUK9K13-60RA belongs to Nexperia's ASFET (Application Specific FET) product line, engineered specifically for repetitive avalanche stress in automotive powertrain and chassis systems - prioritizing ruggedness, thermal performance, and AEC-Q101 compliance over generic switching metrics.

FAQ

What is the maximum continuous drain current for BUK9K13-60RA at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 33 A per channel (V_GS = 5 V), as specified in Table 5 Limiting Values. This reflects thermal constraints of the LFPAK56D package and ensures safe operation within the 175 °C maximum junction temperature limit under sustained load conditions.

Does BUK9K13-60RA require external gate resistors for automotive PWM switching?

No external gate resistor is strictly required for basic turn-on/turn-off, but a 5 Ω external resistor is used in the datasheet's dynamic characterization (Fig. 17) to control dV/dt and prevent oscillation. Designers should select gate resistance based on switching speed requirements, EMI targets, and drive strength - typical values range from 2.2 Ω to 10 Ω for 20–50 kHz PWM in EPS and TCM applications.

How does the dual-drain pin configuration (pins 5&6, 7&8) impact PCB layout?

Pins 5 and 6 are internally paralleled D2 terminals; pins 7 and 8 are internally paralleled D1 terminals. This dual-drain layout reduces package inductance and improves current sharing, but requires symmetric copper pours and equal-length traces to both drain pins to avoid imbalance. The footprint in Figure 21 specifies 3.85 mm × 2.7 mm solder land dimensions for optimal thermal and electrical performance.

Can BUK9K13-60RA be used in single-channel configurations with one gate left floating?

No - leaving either G1 or G2 floating is prohibited. The gate oxide is sensitive to static charge and uncontrolled potential, risking latch-up or permanent damage. Unused channels must be tied to source (S1 or S2) via ≤10 kΩ resistor or actively driven to a defined logic state. Data sheet Section 8 explicitly warns against floating gate terminals under any operating condition.

BUK9K13-60RAX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1205, 8-LFPAK56

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta)

Rds On (Max) @ Id, Vgs:: 11.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 22.4nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:: 2953pF @ 25V

Power - Max:: 64W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56D

BUK9K13-60RAX FAQ

1.How can I place an order for BUK9K13-60RAX through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9K13-60RAX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9K13-60RAX reliable?

The price and inventory of BUK9K13-60RAX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9K13-60RAX is usually 5 days.

3.What payment methods are accepted for BUK9K13-60RAX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9K13-60RAX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9K13-60RAX?

BUK9K13-60RAX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9K13-60RAX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9K13-60RAX?

For technical support, including BUK9K13-60RAX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9K13-60RAX requirements.

6.How does Aetrix verify that BUK9K13-60RAX is sourced from the original manufacturer or authorized distributors?

All BUK9K13-60RAX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9K13-60RAX meets industry standards.

7.What is the process for return or replacement of BUK9K13-60RAX?

All BUK9K13-60RAX units undergo pre-shipment inspection (PSI). If there is an issue with BUK9K13-60RAX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9K13-60RAX part is unused and in its original packaging.

Return procedure for BUK9K13-60RAX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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