Nexperia USA Inc. BUK9K17-60E/1X

Overview

BUK9K17-60E from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 60 V V_DS, 17 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, and qualified to AEC-Q101 for automotive use. It delivers 26 A continuous drain current at T_mb = 25 °C and supports thermally demanding applications up to 175 °C junction temperature.

For engineers reviewing the BUK9K17-60E datasheet, BUK9K17-60E pinout, BUK9K17-60E application, or BUK9K17-60E equivalent, key selection criteria include dual-channel integration for space-constrained motor/solenoid control, true logic-level gate drive compatibility with 3.3 V/5 V microcontrollers, repetitive avalanche rating, and AEC-Q101 qualification for under-hood automotive deployment.

Technical Context

This dual MOSFET integrates two independent N-channel TrenchMOS devices in a single LFPAK56D package, sharing no internal connection between channels. Each FET features a gate-threshold voltage V_GS(th) > 0.5 V at 175 °C, enabling reliable turn-on across full automotive temperature range. The device supports both continuous and pulsed operation with peak drain current up to 148 A (t_p ≤ 10 µs).

Thermal performance is optimized via low R_th(j-mb) of 2.84 K/W to mounting base, enabling high-power switching without external heatsinking in many 12 V automotive systems. Its 175 °C maximum junction temperature and repetitive avalanche capability allow robust operation in transient-overvoltage conditions typical of solenoid and motor load switching.

Key Specifications

Pinout & Package

Package: LFPAK56D (SOT1205), 8-lead plastic surface-mount package with exposed mounting base for enhanced thermal performance and mechanical robustness in automotive vibration environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with STL220N6F7 and NTMFS5C675NL, BUK9K17-60E uniquely combines AEC-Q101 qualification, true logic-level operation down to 175 °C, and dual-channel integration in an automotive-optimized LFPAK56D package - making it the only drop-in solution for space- and reliability-constrained automotive low-side switching.

Availability

BUK9K17-60E is available at Aetrix Electronics and suitable for automotive transmission control, engine cooling fan management, and body control unit lighting requiring stable component supply across extended product lifecycles.

Supply support for BUK9K17-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

BUK9K17-60E belongs to Nexperia's Automotive Logic Level MOSFET product line, engineered specifically for robust, space-efficient power switching in 12 V and 48 V automotive subsystems where AEC-Q101 compliance and thermal resilience are mandatory.

FAQ

What is the maximum continuous drain current for each channel at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS = 5 V, each channel of the BUK9K17-60E supports 26 A continuous drain current, as confirmed in Table 5 (Limiting Values) of the official datasheet. This rating is package-limited and remains constant across the specified mounting base temperature range due to its dual-drain pin construction and low thermal resistance.

Does BUK9K17-60E require external gate resistors for automotive PWM operation?

Yes - although the device has low Q_GD (5.7 nC), an external gate resistor (typically 5–22 Ω) is required to control dV/dt and suppress EMI during PWM switching in automotive environments. Figure 2 in the datasheet shows test conditions using R_G(ext) = 5 Ω, and application note AN11137 recommends layout-aware gate drive design to avoid shoot-through in dual-channel configurations.

Can BUK9K17-60E replace two discrete SO-8 MOSFETs in an existing design?

Yes - the LFPAK56D (SOT1205) footprint provides identical PCB pad layout compatibility with standard SO-8 packages while offering superior thermal performance (R_th(j-mb) = 2.84 K/W vs. ~3.5 K/W for SO-8). Pin mapping differs (dual drain/source pins), so layout adaptation is needed, but no change to gate drive or protection circuitry is required due to identical electrical characteristics.

Is the source-drain diode in each channel suitable for freewheeling in inductive loads?

Yes - each channel includes an integrated body diode with V_SD = 0.78–1.2 V at I_S = 10 A and T_j = 25 °C (Table 7), and t_rr = 20.3 ns. Its Q_r = 16.7 nC enables efficient recovery in 12 V solenoid and motor applications, though external Schottky diodes may be added for higher efficiency in high-frequency PWM.