Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK9K18-40E,115

Part No.:
BUK9K18-40E,115
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
SOT-1205, 8-LFPAK56
Datasheet:
AetrixBUK9K18-40E,115.pdf
Description:
MOSFET 2N-CH 40V 30A LFPAK56D
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,480

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK9K18-40E from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 40 V VDS, 19.5 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, and qualified to AEC-Q101 for automotive use. It delivers 30 A continuous drain current at Tmb = 25 °C and supports thermally demanding applications up to 175 °C junction temperature - deployed in 12 V automotive motor and solenoid control.

For engineers reviewing the BUK9K18-40E datasheet, BUK9K18-40E pinout, BUK9K18-40E application, or BUK9K18-40E equivalent, key selection criteria include its dual-FET integration in a single LFPAK56D footprint, true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), repetitive avalanche rating, and AEC-Q101 qualification for transmission control and high-reliability power switching.

Technical Context

This device integrates two independent N-channel TrenchMOS transistors in one monolithic die housed in an LFPAK56D package with dual drain-source thermal paths. Its gate threshold voltage remains functional across -55 °C to 175 °C, enabling robust operation in engine bay environments without level-shifting circuitry.

The MOSFETs share no internal connection between channels - each has dedicated gate, source, and drain terminals. Dynamic parameters include QGD = 3 nC and Ciss = 796–1061 pF, supporting fast switching in PWM-driven loads while maintaining low conduction loss via RDS(on) ≤ 39.2 mΩ at 175 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum - supports full 12 V automotive battery transient margin (e.g., load dump up to 40 V).
RDS(on) 19.5 mΩ typical at VGS = 5 V, Tj = 25 °C - enables <1.5 W conduction loss at 10 A DC.
ID 30 A continuous at Tmb = 25 °C - sufficient for high-current solenoid or fan drivers without external heatsinking.
Tj max 175 °C - allows operation in under-hood locations where ambient exceeds 125 °C.
Avalanche energy 22 mJ non-repetitive (EDS(AL)S) - provides single-pulse fault tolerance during inductive load turn-off.
QGD 3 nC - limits Miller-induced shoot-through risk in half-bridge configurations.
Rth(j-mb) 3.96 K/W - enables efficient heat transfer to PCB copper pour or heatsink via mounting base.

Pinout & Package

Package: LFPAK56D (SOT1205), plastic surface-mount package with exposed mounting base for thermal enhancement; 8-terminal layout optimized for dual-channel power routing and low-inductance PCB layout.

Pin/Terminal Circuit Role Design Meaning
1 S1 Source terminal of FET1 - connects to low-side return path; electrically isolated from S2.
2 G1 Gate terminal of FET1 - accepts standard 3.3 V/5 V logic-level drive without buffer.
3 S2 Source terminal of FET2 - independent return node; enables floating or separate ground referencing.
4 G2 Gate terminal of FET2 - fully decoupled from G1; supports independent PWM or phase control.
5 & 6 D2 Drain terminals of FET2 - paralleled internally for current sharing and lower inductance; connects to load/high-side rail.
7 & 8 D1 Drain terminals of FET1 - paralleled internally; supports high-current switching with reduced bond-wire impedance.

Key Features

Feature Design Value
Dual independent N-channel MOSFETs Two fully isolated channels in one package - eliminates board space and interconnect inverter/driver pairs for H-bridge or dual-load control.
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, humidity bias, and ESD - suitable for safety-critical transmission and chassis modules.
True logic-level gate VGS(th) > 0.5 V at 175 °C - ensures turn-on margin even at peak junction temperature without gate boosting.
Repetitive avalanche rated Rated for repeated inductive energy dissipation - enables robust operation in motor commutation without external snubbers.
175 °C maximum junction temperature Enables direct placement near heat sources (e.g., engine control units) with no derating penalty up to ambient 125 °C.

Applications

Transmission Control Valve Driver Engine Cooling Fan Controller

Use Scenario: Driving proportional solenoid valves in automatic transmission hydraulic control units with PWM at 1–10 kHz.

IC Role / Device Role / Timing Role: High-side or low-side switch delivering precise current regulation via duty-cycle control and current sensing feedback.

Use Value: Dual-channel integration reduces component count by 50% vs. discrete MOSFETs; 19.5 mΩ RDS(on) minimizes self-heating during sustained 8 A valve hold current.

Use Scenario: Controlling 12 V brushless cooling fans in engine compartments with variable speed based on coolant temperature.

IC Role / Device Role / Timing Role: Low-side switch in PWM-driven half-bridge configuration, handling 15–25 A peak currents during startup surge.

Use Value: Repetitive avalanche rating absorbs back-EMF spikes during rapid fan deceleration; 175 °C rating avoids thermal shutdown during prolonged high-ambient operation.

Electric Power Steering Motor Phase Switch Body Control Module Lamp Driver

Use Scenario: Implementing phase-leg switching in 12 V EPS assist motors requiring bidirectional current flow and fast dead-time control.

IC Role / Device Role / Timing Role: One channel used as high-side, the other as low-side in complementary pair - enabled by independent gate control and matched RDS(on).

Use Value: Matched dynamic characteristics (QGD = 3 nC, tf = 9.9 ns) minimize shoot-through risk; LFPAK56D thermal resistance (3.96 K/W) sustains 20 A RMS without forced air.

Use Scenario: Switching LED headlamps, fog lamps, and interior lighting in body control modules with diagnostic feedback and short-circuit protection.

IC Role / Device Role / Timing Role: Low-side driver with integrated current limiting and thermal foldback - leveraging built-in avalanche ruggedness for lamp hot-plug events.

Use Value: True logic-level gate allows direct MCU GPIO interface; 30 A ID rating supports parallel lamp strings up to 350 W total load per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4LF8AG 40 V, 2.2 mΩ RDS(on) at VGS = 10 V; requires 10 V gate drive; not AEC-Q101 qualified. Targeted at industrial motor drives, not automotive; lacks high-temp VGS(th) validation. Select only for cost-sensitive non-automotive systems where gate drive voltage ≥ 8 V is available.
ON Semiconductor NTMFS5C675NL 60 V, 5.2 mΩ RDS(on) at VGS = 10 V; SO-8FL package; AEC-Q101 qualified but single-channel. Requires two devices for dual functionality; higher VDS margin trades off conduction loss and board area. Choose when 60 V system margin is mandatory or when existing design uses SO-8FL footprint and needs upgrade path.

Compared with STL220N4LF8AG and NTMFS5C675NL, the BUK9K18-40E uniquely combines dual-channel integration, AEC-Q101 qualification, true 5 V logic-level operation, and 175 °C capability - making it the only drop-in solution for space-constrained, thermally aggressive automotive power stages requiring single-package redundancy.

Availability

BUK9K18-40E is available at Aetrix Electronics and suitable for automotive transmission control, engine cooling fan management, and body control module lamp switching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BUK9K18-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for automotive, industrial, and consumer applications.

The BUK9K series targets AEC-Q101-compliant power switching in 12 V automotive subsystems, emphasizing thermal resilience, logic-level drivability, and integrated dual-channel efficiency for space-constrained ECUs.

FAQ

Is BUK9K18-40E pin-compatible with other LFPAK56D dual-MOSFETs?

No - BUK9K18-40E uses a unique 8-pin LFPAK56D pinout (S1-G1-S2-G2-D2-D2-D1-D1) with dual-drain paralleling per channel. Other dual-MOSFETs in LFPAK56D (e.g., BUK7K18-40E) have different pin assignments and internal connectivity; PCB layout must be verified against SOT1205 mechanical drawing.

What is the maximum safe operating temperature for continuous use?

The device is rated for continuous operation up to Tj = 175 °C, with thermal derating defined in Figure 1 and Figure 2 of the datasheet. At Tmb = 100 °C, continuous drain current drops to 24 A; proper PCB copper area (≥ 200 mm² per drain pad) and mounting base contact are required to sustain this condition.

Does BUK9K18-40E support synchronous rectification?

Yes - its low RDS(on) (19.5 mΩ), fast switching (tf = 9.9 ns), and integrated body diode (VSD = 0.78 V at 10 A) make it suitable for synchronous rectification in 12 V DC-DC converters, provided gate drive timing avoids cross-conduction and layout minimizes parasitic inductance.

Can both channels be paralleled to increase current capacity?

No - the two channels are electrically isolated with separate gates, sources, and drains; they are not internally matched for current sharing. Paralleling would require external current-balancing resistors and identical gate drive paths, negating the benefit of dual integration. Use single-channel higher-current alternatives instead.

BUK9K18-40E,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SOT-1205, 8-LFPAK56
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
30A
Rds On (Max) @ Id, Vgs:
16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1061pF @ 25V
Power - Max:
38W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56D

BUK9K18-40E,115 FAQ

1.How can I place an order for BUK9K18-40E,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9K18-40E,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9K18-40E,115 reliable?

The price and inventory of BUK9K18-40E,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9K18-40E,115 is usually 5 days.

3.What payment methods are accepted for BUK9K18-40E,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9K18-40E,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9K18-40E,115?

BUK9K18-40E,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9K18-40E,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9K18-40E,115?

For technical support, including BUK9K18-40E,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9K18-40E,115 requirements.

6.How does Aetrix verify that BUK9K18-40E,115 is sourced from the original manufacturer or authorized distributors?

All BUK9K18-40E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9K18-40E,115 meets industry standards.

7.What is the process for return or replacement of BUK9K18-40E,115?

All BUK9K18-40E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9K18-40E,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9K18-40E,115 part is unused and in its original packaging.

Return procedure for BUK9K18-40E,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9K18-40E,115 Tags

  • BUK9K18-40E,115
  • BUK9K18-40E,115 PDF
  • BUK9K18-40E,115 Datasheet
  • BUK9K18-40E,115 Specifications
  • BUK9K18-40E,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK9K18-40E,115
  • Buy BUK9K18-40E,115
  • BUK9K18-40E,115 Price
  • BUK9K18-40E,115 Distributor
  • BUK9K18-40E,115 Supplier
  • BUK9K18-40E,115 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER