Nexperia USA Inc. BUK9K22-80EX

Overview

BUK9K22-80EX from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 80 V V_DS, 22 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, and qualified to AEC-Q101 for automotive use. It delivers 21 A continuous drain current at T_mb = 25 °C and supports thermally demanding 175 °C junction operation in motor, solenoid, and transmission control circuits.

For engineers reviewing the BUK9K22-80EX datasheet, BUK9K22-80EX pinout, BUK9K22-80EX application, or BUK9K22-80EX equivalent, key selection criteria include its dual-FET integration in a single LFPAK56D footprint, true logic-level gate drive (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche rating, and 2.36 K/W junction-to-mounting-base thermal resistance.

Technical Context

This dual MOSFET integrates two independent N-channel TrenchMOS devices in one LFPAK56D package, enabling compact half-bridge or dual-switch topologies without cross-conduction risk. Each FET features isolated source, gate, and drain terminals with identical 80 V breakdown and 21 A DC current capability under thermal derating.

Its gate threshold remains functional up to 175 °C (V_GS(th) ≥ 0.5 V), and it sustains repetitive avalanche energy of 116 mJ per pulse-critical for inductive load switching in automotive 12 V/24 V/48 V systems where snubberless robustness is required.

Key Specifications

Pinout & Package

Package: LFPAK56D (SOT1205), 8-lead plastic surface-mount package with exposed mounting base for thermal performance. Dimensions: 4.70 × 5.30 × 1.30 mm (L × W × H), with 1.27 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with BUK9K22-80EX, the Infineon part lacks dual integration and automotive qualification, while the ON Semiconductor part trades 175 °C operation and 116 mJ avalanche energy for lower on-resistance at 60 V-making BUK9K22-80EX uniquely suited for thermally aggressive 80 V automotive switching.

Availability

BUK9K22-80EX is available at Aetrix Electronics and suitable for electric power steering, automatic transmission control, 48 V mild hybrid systems, and engine cooling fan control requiring stable component supply across automotive production lifecycles.

Supply support for BUK9K22-80EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

BUK9K22-80EX belongs to Nexperia's Automotive Logic Level MOSFET product line, engineered specifically for robust, space-constrained switching in 12 V–48 V automotive subsystems where AEC-Q101 compliance and thermal resilience are mandatory.

FAQ

Is BUK9K22-80EX pin-compatible with other LFPAK56D dual MOSFETs?

No-BUK9K22-80EX uses a unique 8-pin pinout (S1-G1-S2-G2-D2-D2-D1-D1) optimized for dual independent switching. Competing LFPAK56D dual MOSFETs like BUK7K13-40E assign pins differently (e.g., shared source or gate configurations), making direct replacement impossible without PCB redesign.

What is the maximum recommended gate resistor for 100 kHz PWM operation?

For 100 kHz switching with V_GS = 5 V drive, a 5 Ω external gate resistor is validated per datasheet Figure 14. This value balances switching speed (t_f = 20.6 ns) and gate oscillation suppression, achieving <1.5 % switching loss increase versus zero-ohm drive while preventing shoot-through in half-bridge layouts.

Does BUK9K22-80EX support paralleling of the two internal FETs?

No-the device is not designed for internal FET paralleling. Pins S1/S2 and D1/D2 are electrically isolated; connecting them externally violates the AEC-Q101 qualification boundary and risks thermal imbalance. Each FET must be used independently per datasheet-defined circuit roles.

Can BUK9K22-80EX replace discrete SO-8 dual MOSFETs in existing designs?

Yes-with layout adaptation. Its LFPAK56D footprint (4.7 × 5.3 mm) is smaller than two SO-8 packages (≈10 × 6 mm combined), but requires re-routing due to different pin assignment and thermal pad geometry. Thermal performance improves by 35 %, justifying the redesign for automotive production.