Nexperia USA Inc. BUK9K32-100EX

Overview

BUK9K32-100EX from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 100 V V_DS, 33 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, qualified to AEC-Q101, and rated for continuous operation up to 175 °C junction temperature. It serves as a high-reliability power switch in automotive transmission control and solenoid drive circuits.

For engineers reviewing the BUK9K32-100EX datasheet, BUK9K32-100EX pinout, BUK9K32-100EX application, or BUK9K32-100EX equivalent, key selection criteria include its dual-channel layout, repetitive avalanche rating, true logic-level gate threshold (V_GS(th) > 0.5 V at 175 °C), and thermal resistance of 2.36 K/W (junction-to-mounting base).

Technical Context

This device integrates two independent N-channel TrenchMOS transistors in a single LFPAK56D package, sharing no internal connection between channels. Each FET supports 100 V blocking, 26 A continuous drain current at T_mb = 25 °C, and exhibits 74 mJ non-repetitive avalanche energy under defined test conditions.

Its gate drive is optimized for 5 V logic-level systems, with V_GS(th) specified from −55 °C to 175 °C and R_DS(on) tightly controlled across temperature-73.4 mΩ typical at 175 °C and V_GS = 5 V. The integrated source-drain diodes support bidirectional current handling with 35.6 ns reverse recovery time and 47.3 nC recovered charge.

Key Specifications

Pinout & Package

LFPAK56D (SOT1205) is a thermally enhanced surface-mount package with exposed copper mounting base, 8 leads, and dual-drain configuration optimized for low-inductance, high-current automotive PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with STL220N6F7 and NTMFS5C675NL, BUK9K32-100EX uniquely delivers dual-channel 100 V capability with AEC-Q101 qualification, 175 °C operation, and repetitive avalanche robustness-making it the only drop-in solution for thermally demanding 48 V automotive power switching where functional safety and long-term reliability are mandatory.

Availability

BUK9K32-100EX is available at Aetrix Electronics and suitable for automotive transmission control, 48 V mild hybrid DC-DC conversion, and high-reliability motor actuation requiring stable component supply across multi-year production programs.

Supply support for BUK9K32-100EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets, with leadership in MOSFETs, ESD protection, and logic.

BUK9K32-100EX belongs to Nexperia's Automotive Logic-Level MOSFET product line, engineered specifically for thermally constrained, safety-critical automotive power switching applications requiring AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum continuous drain current for each channel at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS = 5 V, the maximum continuous drain current per channel is 19 A, as confirmed in Table 5 (Limiting Values) of the official datasheet. This reflects thermal derating from the 26 A rating at 25 °C, based on the device's R_th(j-mb) = 2.36 K/W and maximum T_j = 175 °C limit.

Is BUK9K32-100EX suitable for use in a high-side switching configuration?

Yes-each channel operates as a standard N-channel MOSFET and can be used in high-side configurations when paired with an appropriate gate driver that provides V_GS ≥ 5 V above the drain rail. The device's 100 V V_DS rating and 175 °C junction capability make it viable for 48 V high-side solenoid or lamp drivers, provided gate drive isolation and timing are properly implemented.

Does the BUK9K32-100EX integrate body diodes, and what are their key parameters?

Yes-each channel includes an intrinsic source-drain diode. Key parameters include V_SD = 0.78 V typical at I_S = 5 A and T_j = 25 °C, t_rr = 35.6 ns, and Q_r = 47.3 nC under specified test conditions (I_S = 10 A, dI_S/dt = −100 A/µs, V_DS = 50 V). These values support freewheeling in inductive loads without external diodes.

How does the device's avalanche rating impact system-level design?

The 74 mJ non-repetitive avalanche energy rating (E_AS) allows the device to safely absorb inductive energy during fault events like sudden load disconnection-eliminating the need for external clamping components in many automotive solenoid and motor control designs. This improves system robustness and reduces bill-of-materials count while maintaining AEC-Q101-compliant reliability.