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Nexperia USA Inc. BUK9K35-60E,115
- Part No.:
- BUK9K35-60E,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
BUK9K35-60E,115.pdf
- Description:
- MOSFET 2N-CH 60V 22A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:2,655
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Product details
Overview
BUK9K35-60E from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated 60 V VDS, 35 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, qualified to AEC-Q101 for automotive use, with 175 °C maximum junction temperature and repetitive avalanche rating.
For engineers reviewing the BUK9K35-60E datasheet, BUK9K35-60E pinout, BUK9K35-60E application, or BUK9K35-60E equivalent, key selection considerations include dual-channel thermal performance in 12 V automotive power switching, gate threshold stability up to 175 °C, and LFPAK56D package's low Rth(j-mb) of 3.96 K/W.
Technical Context
This dual MOSFET integrates two independent N-channel TrenchMOS devices in a single LFPAK56D leadframe package, sharing no internal connection between channels - enabling isolated high-side or low-side switching per FET. Each channel supports true logic-level drive (VGS(th) > 0.5 V at 175 °C) and handles continuous drain current up to 22 A at Tmb = 25 °C.
It features repetitive avalanche capability (EAS = 19.5 mJ), 60 V drain-source breakdown, and thermally robust construction validated for automotive under-hood environments. The device's dynamic parameters - QGD = 3 nC, Ciss = 811–1081 pF, tf = 10.6 ns - support efficient 100 kHz-class PWM control in motor and solenoid drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) | 30.5–35 mΩ @ VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 5 A, critical for thermally constrained PCB layouts. |
| ID | 22 A continuous @ Tmb = 25 °C - Supports high-current loads like HVAC blowers or transmission solenoids without external heatsinking. |
| Tj(max) | 175 °C - Qualified for under-hood operation where ambient temperatures exceed 125 °C and thermal cycling is severe. |
| Rth(j-mb) | 3.96 K/W - Low junction-to-mounting-base resistance enables direct copper pour thermal coupling for high-power density designs. |
| QGD | 3 nC - Gate-drain charge determines Miller plateau duration; enables fast, controllable turn-off in hard-switched applications. |
| Avalanche Energy | 19.5 mJ (non-repetitive) - Withstands single-pulse inductive kickback from motors or solenoids without failure. |
Pinout & Package
LFPAK56D (SOT1205) is a thermally enhanced surface-mount package with exposed copper mounting base and 8 leads. Its low-profile design (max height 1.05 mm) and optimized thermal path support high-power density in automotive ECUs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal for FET1 - electrically isolated from S2; connects directly to PCB ground plane for low-inductance return path. |
| 2 | G1 | Gate terminal for FET1 - requires ≤15 V drive; threshold remains functional up to 175 °C junction temperature. |
| 3 | S2 | Source terminal for FET2 - independent of S1; enables dual-channel half-bridge or independent load control. |
| 4 | G2 | Gate terminal for FET2 - fully decoupled from G1; allows asynchronous or complementary switching control. |
| 5, 6 | D2 | Drain terminals for FET2 - paralleled internally; connects to high-side or low-side load node depending on topology. |
| 7, 8 | D1 | Drain terminals for FET1 - paralleled internally; shares same thermal base as D2 but electrically isolated. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive grade reliability including temperature cycling, HTRB, and ESD per ISO 10605. |
| Repetitive avalanche rated | Withstands repeated inductive energy spikes up to 19.5 mJ without parameter shift or degradation. |
| True logic-level gate | VGS(th) ≥ 0.5 V at Tj = 175 °C ensures reliable turn-on using standard 5 V microcontroller GPIOs in hot environments. |
| 175 °C junction rating | Enables operation in engine bay locations where ambient exceeds 125 °C and thermal derating margins are minimal. |
| LFPAK56D thermal performance | Rth(j-mb) = 3.96 K/W allows >30 W dissipation with 75 °C temperature rise above mounting base - double typical SO-8. |
Applications
| Engine Cooling Fan Control | Automatic Transmission Solenoid Drive |
|---|---|
|
Use Scenario: PWM-controlled 12 V DC brushless fan module in engine compartment, operating continuously at ambient up to 105 °C. IC Role / Device Role / Timing Role: Dual-channel low-side switch - one FET drives fan phase A, the other drives phase B; synchronized gating enables precise speed regulation. Use Value: 35 mΩ RDS(on) minimizes conduction loss at 15 A peak, while 175 °C Tj(max) prevents thermal shutdown during sustained high-load conditions. |
Use Scenario: High-duty-cycle 12 V solenoid actuator in automatic transmission valve body, requiring rapid on/off transitions and fault tolerance. IC Role / Device Role / Timing Role: Independent high-side driver per solenoid coil - each FET handles 3–5 A pulsed current with <15 ns turn-off delay for precise hydraulic timing. Use Value: Repetitive avalanche rating absorbs back-EMF from 50 ms coil de-energization, eliminating need for external flyback diodes and reducing BOM count. |
| Body Control Module Lighting | Electric Power Steering Motor Phase |
|
Use Scenario: LED headlamp matrix dimming and position lamp switching in BCM, subject to ISO 7637-2 pulse 5a load dump events. IC Role / Device Role / Timing Role: Dual-channel protected load switch - one FET controls dipped beam, the other controls sidelights; integrated overvoltage clamping reduces TVS count. Use Value: 60 V VDS withstands 40 V transients per ISO 7637-2, while 3.96 K/W thermal resistance maintains safe Tj during simultaneous full-load operation. |
Use Scenario: Low-voltage phase leg in 12 V EPS motor driver, switching at 20–50 kHz with high dv/dt and current slew rates. IC Role / Device Role / Timing Role: Half-bridge low-side switch - FET1 and FET2 operate in complementary mode with dead-time control; QGD = 3 nC ensures clean Miller immunity. Use Value: Ciss = 811–1081 pF and tr/tf < 12 ns enable stable 50 kHz operation with <5% switching loss increase vs. discrete SO-8 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | Single-channel 60 V, 2.2 mΩ, PowerFLAT 5x6 - lower RDS(on) but no dual configuration; requires two devices for same function. | Requires PCB layout duplication and gate drive isolation; lacks integrated dual-channel thermal coupling. | Prefer when ultra-low conduction loss dominates over board space and thermal synergy. |
| ON Semiconductor NTMFS5C675NL | Dual N-channel 60 V, 4.8 mΩ, PowerTrench® 5x6 - lower RDS(on) but only rated to 150 °C Tj; not AEC-Q101 qualified. | Not approved for automotive under-hood use; requires additional qualification effort and derating for thermal margin. | Consider only for industrial or commercial 12 V systems where AEC-Q101 is not mandated. |
Compared with STL220N6F7 and NTMFS5C675NL, the BUK9K35-60E uniquely delivers AEC-Q101 compliance, dual-channel integration in one LFPAK56D footprint, and guaranteed 175 °C operation - making it the only drop-in solution for space-constrained, thermally aggressive automotive power stages.
Availability
BUK9K35-60E is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and body electronics requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BUK9K35-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.
The BUK9K series targets automotive power switching applications demanding AEC-Q101 compliance, high-temperature resilience, and compact thermal packaging - specifically engineered for next-generation 12 V electrification subsystems.
FAQ
Is BUK9K35-60E pin-compatible with standard SO-8 MOSFETs?
No - BUK9K35-60E uses the LFPAK56D (SOT1205) package, which has an 8-lead footprint but different pin arrangement and thermal pad layout versus SO-8. Pin 1–4 map to S1/G1/S2/G2, while pins 5–8 are paralleled drains (D2/D2/D1/D1). PCB redesign is required for migration from SO-8.
What is the maximum recommended gate resistor for 5 V MCU drive?
For reliable 5 V logic-level drive with <20 ns switching, a 10 Ω series gate resistor is recommended. This value balances turn-on speed against ringing and overshoot, given the device's QG(tot) = 7.8 nC and QGD = 3 nC. Lower values (<5 Ω) risk gate oscillation without proper layout; higher values (>22 Ω) extend td(off) beyond 14.9 ns.
Does BUK9K35-60E require external gate pull-down resistors?
Yes - although VGS(th) is specified down to 0.5 V at 175 °C, the device has no internal gate termination. A 10 kΩ pull-down resistor per gate (G1 and G2) is required to ensure defined off-state during MCU reset, power-up, or signal loss, preventing unintended conduction in safety-critical automotive functions.
Can both FETs be used in parallel for higher current handling?
No - the two FETs share the same thermal base but have electrically isolated channels; paralleling them does not halve RDS(on) due to mismatched threshold voltages and dynamic characteristics. For higher current, use dedicated single-channel devices with matched specs or implement active current balancing circuitry.
BUK9K35-60E,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 22A
- Rds On (Max) @ Id, Vgs:
- 32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1081pF @ 25V
- Power - Max:
- 38W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
BUK9K35-60E,115 FAQ
1.How can I place an order for BUK9K35-60E,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9K35-60E,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9K35-60E,115 reliable?
The price and inventory of BUK9K35-60E,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9K35-60E,115 is usually 5 days.
3.What payment methods are accepted for BUK9K35-60E,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9K35-60E,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK9K35-60E,115?
BUK9K35-60E,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9K35-60E,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9K35-60E,115?
For technical support, including BUK9K35-60E,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9K35-60E,115 requirements.
6.How does Aetrix verify that BUK9K35-60E,115 is sourced from the original manufacturer or authorized distributors?
All BUK9K35-60E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9K35-60E,115 meets industry standards.
7.What is the process for return or replacement of BUK9K35-60E,115?
All BUK9K35-60E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9K35-60E,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9K35-60E,115 part is unused and in its original packaging.
Return procedure for BUK9K35-60E,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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