Nexperia USA Inc. BUK9K6R2-40E,115

Overview

BUK9K6R2-40E from Nexperia is a dual N-channel TrenchMOS logic-level power MOSFET in LFPAK56D (SOT1205) package, rated for 40 V drain-source voltage, 40 A continuous drain current at 25 °C mounting base temperature, and 68 W total power dissipation. It features 5.27 mΩ typical R_DS(on) at V_GS = 5 V and 25 °C, true logic-level gate threshold (>0.5 V at 175 °C), and AEC-Q101 qualification for automotive use in motor, lamp, and solenoid control.

For engineers reviewing the BUK9K6R2-40E datasheet, BUK9K6R2-40E pinout, BUK9K6R2-40E application, or BUK9K6R2-40E equivalent, key selection criteria include its dual-channel configuration, 175 °C junction rating, repetitive avalanche capability, low R_DS(on) at 5 V drive, and LFPAK56D thermal performance for high-reliability 12 V automotive power switching.

Technical Context

This device integrates two independent N-channel MOSFETs in a single LFPAK56D package with shared thermal path to the mounting base. Its TrenchMOS architecture delivers low on-resistance and fast switching, supported by 5.8 nC Q_GD, 35.4 nC Q_G(tot), and 2461 pF C_iss - enabling efficient PWM control in high-frequency power stages.

The device operates across -55 °C to +175 °C junction temperature range, with V_GS(th) stable down to 0.5 V at 175 °C and guaranteed 40 V V_DS rating. Its 2.21 K/W R_th(j-mb) enables high-power operation without external heatsinking when mounted on copper pads per JEDEC standards.

Key Specifications

Pinout & Package

LFPAK56D (SOT1205) is a thermally enhanced surface-mount package with exposed copper mounting base and 8 leads. Its 4.45 mm × 4.70 mm footprint and 1.3 mm height support high-current routing and low-inductance layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and NTMFS5C675NL, BUK9K6R2-40E uniquely combines dual-channel integration, 5.27 mΩ R_DS(on) at 5 V, AEC-Q101 qualification, and 2.21 K/W thermal resistance - making it optimal for space-constrained, thermally demanding 12 V automotive power nodes.

Availability

BUK9K6R2-40E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control modules, and electric power steering units requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for BUK9K6R2-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets, with leadership in MOSFETs, diodes, and logic.

BUK9K6R2-40E belongs to Nexperia's TrenchMOS automotive logic-level power MOSFET product line, engineered specifically for thermally aggressive 12 V vehicle subsystems requiring robustness, low gate drive, and dual-channel integration.

FAQ

What is the maximum continuous drain current for BUK9K6R2-40E at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 40 A per channel, as specified in Table 5 (Limiting values). This is maintained due to the device's 175 °C junction rating and low R_th(j-mb) of 2.21 K/W, allowing substantial thermal headroom even in high-ambient under-hood environments.

Does BUK9K6R2-40E support gate drive from 3.3 V microcontrollers?

Yes - its V_GS(th) remains ≥0.5 V at 175 °C junction temperature, and R_DS(on) is fully characterized at V_GS = 5 V. While 3.3 V is below the typical turn-on threshold, the device achieves usable conduction (R_DS(on) ≈ 15–20 mΩ) at 3.3 V per Figure 7, sufficient for many low-duty-cycle automotive loads.

How is the dual-drain pin configuration (pins 5/6 and 7/8) implemented internally?

Pins 5 & 6 are internally bonded to the same die region of FET2's drain; pins 7 & 8 similarly connect to FET1's drain. This dual-pin arrangement halves current density per lead, reduces parasitic inductance, and improves thermal coupling to the PCB copper pour - directly enhancing avalanche ruggedness and PWM efficiency.

Is the source-drain body diode rated for continuous conduction in synchronous rectification?

The integrated body diode supports 40 A continuous source current (I_S) at T_mb = 25 °C and has V_SD = 0.78 V typical at 15 A and 25 °C. However, its reverse recovery time (t_rr = 23.7 ns) and recovered charge (Q_r = 16.8 nC) are optimized for freewheeling - not high-frequency synchronous rectification - where external Schottky diodes remain preferred.