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Nexperia USA Inc. BUK9K89-100E,115

Part No.:
BUK9K89-100E,115
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
SOT-1205, 8-LFPAK56
Datasheet:
AetrixBUK9K89-100E,115.pdf
Description:
MOSFET 2N-CH 100V 12.5A LFPAK56D
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,265

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Product details

Overview

BUK9K89-100E from Nexperia is a dual N-channel TrenchMOS logic-level power FET in LFPAK56D (SOT1205) package, designed for high-reliability automotive switching. It delivers 100 V drain-source voltage rating, 12.5 A continuous drain current at 25 °C mounting base temperature, and 75.8 mΩ typical RDS(on) at VGS = 5 V and Tj = 25 °C - enabling efficient 12 V start-stop micro-hybrid and transmission control.

For engineers reviewing the BUK9K89-100E datasheet, BUK9K89-100E pinout, BUK9K89-100E application, or BUK9K89-100E equivalent, this device supports thermally demanding automotive environments up to 175 °C junction temperature, features true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), and is AEC-Q101 qualified for automotive-grade robustness.

Technical Context

This dual MOSFET integrates two independent N-channel TrenchMOS die in a single LFPAK56D package with shared thermal path to the mounting base. Each channel supports repetitive avalanche operation and exhibits matched static/dynamic characteristics: RDS(on) = 75.8 mΩ (typ), QGD = 4.2 nC, and tf = 12.1 ns under standard test conditions.

Its gate threshold voltage remains functional across full temperature range (0.5–2.45 V), and thermal resistance from junction to mounting base is 3.96 K/W - enabling high-power density switching in constrained automotive PCB layouts without external heatsinking.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum blocking voltage for 12 V automotive systems with load dump margin
ID (continuous) 12.5 A at Tmb = 25 °C - Sustains motor/solenoid loads without derating at ambient mounting conditions
RDS(on) 75.8 mΩ typ @ VGS = 5 V, Tj = 25 °C - Enables low conduction loss in logic-level driven circuits
Tj max 175 °C - Supports operation in engine bay and transmission control modules
QGD 4.2 nC - Low gate-drain charge minimizes switching losses during hard commutation
Rth(j-mb) 3.96 K/W - Efficient heat transfer to PCB copper area enables compact thermal design
Avalanche energy 21 mJ (single-pulse) - Withstands inductive kickback in solenoid and motor control without failure

Pinout & Package

Package: LFPAK56D (SOT1205), plastic surface-mount package with exposed copper mounting base for enhanced thermal performance and mechanical robustness in automotive vibration environments.

Pin/Terminal Circuit Role Design Meaning
1 S1 Source terminal of FET1 - connects to low-side return path for first channel
2 G1 Gate terminal of FET1 - accepts 5 V logic-level drive without level-shifting
3 S2 Source terminal of FET2 - electrically isolated from S1; enables dual independent switches
4 G2 Gate terminal of FET2 - independently controllable for phase-split or redundancy configurations
5, 6 D2 Drain terminals of FET2 - paralleled pins reduce inductance and improve current sharing
7, 8 D1 Drain terminals of FET1 - paralleled pins support high-current routing with low parasitic inductance

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine control, transmission, and ADAS subsystems
Repetitive avalanche rating Enables reliable operation under inductive switching stress without external snubbers
True logic-level gate VGS(th) > 0.5 V at 175 °C ensures turn-on compatibility with 3.3 V/5 V microcontrollers
175 °C junction rating Permits direct placement near heat sources (e.g., power converters, gearboxes) without thermal throttling
LFPAK56D thermal performance 3.96 K/W Rth(j-mb) allows >30 W dissipation on 25 mm² 2-oz copper pad

Applications

Start-Stop Micro-Hybrid Control Transmission Solenoid Driver

Use Scenario: Managing battery-to-starter and alternator load sequencing during engine restart cycles in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Dual-channel high-side/low-side switch controlling starter relay and solenoid timing with precise dead-time management.

Use Value: 75.8 mΩ RDS(on) minimizes voltage drop during cranking; 175 °C rating sustains operation during repeated thermal cycling.

Use Scenario: Driving electro-hydraulic transmission solenoids requiring fast, bidirectional current control and fault tolerance.

IC Role / Device Role / Timing Role: Independent dual N-channel switch enabling PWM-controlled solenoid actuation with reverse recovery diode integration.

Use Value: Matched dynamic parameters (QGD, tf) ensure synchronized switching; avalanche ruggedness absorbs inductive flyback energy.

Engine Bay Lamp Control Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Switching high-intensity headlamps, fog lamps, and daytime running lights in harsh under-hood environments.

IC Role / Device Role / Timing Role: High-current, thermally robust load switch replacing electromechanical relays for improved lifetime and EMI control.

Use Value: 12.5 A continuous current supports 150 W lamp loads; 100 V VDS accommodates ISO 7637-2 pulse 5a load dump transients.

Use Scenario: Implementing half-bridge phase legs in brushless DC motor drivers for EPS assist torque modulation.

IC Role / Device Role / Timing Role: Dual FET used as synchronous rectifier and active switch in compact half-bridge topology with shared thermal interface.

Use Value: Low RDS(on) reduces conduction loss in high-duty-cycle assist modes; LFPAK56D package withstands automotive shock/vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
BUK9Y89-100E Same die, but in LFPAK33 (SOT1207) package with lower Rth(j-mb) (3.3 K/W) and reduced footprint Better thermal performance in space-constrained modules; lower current rating (10.5 A) limits use in high-power solenoids Select when board space is critical and thermal budget allows tighter layout; verify mounting base area matches SOT1207 pad pattern
IPB80N04S4-02 Single-channel 40 V, 80 A TrenchMOS with TO-263 package; higher current but lower voltage rating and no dual configuration Requires two devices for dual functionality; lacks integrated dual-channel timing matching and shared thermal path Choose only if 40 V system architecture applies and discrete channel isolation is preferred over monolithic dual integration

Compared with BUK9K89-100E, BUK9Y89-100E offers superior thermal efficiency in smaller area but sacrifices current capability, while IPB80N04S4-02 provides higher single-channel current at lower voltage - neither replicates the AEC-Q101-qualified dual-channel, 100 V, logic-level integration in LFPAK56D.

Availability

BUK9K89-100E is available at Aetrix Electronics and suitable for automotive start-stop systems, transmission control units, and engine bay lighting requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BUK9K89-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets, with leadership in MOSFETs, logic, and ESD protection.

This device belongs to Nexperia's AEC-Q101-qualified TrenchMOS automotive power portfolio, engineered specifically for robust, high-efficiency switching in 12 V vehicle networks where thermal resilience and logic-level drivability are mandatory.

FAQ

Is BUK9K89-100E pin-compatible with other LFPAK56D dual MOSFETs?

No - BUK9K89-100E has a unique 8-pin pinout (S1-G1-S2-G2-D2-D2-D1-D1) optimized for dual-channel separation and thermal symmetry. Other LFPAK56D dual FETs like BUK9Y89-100E share the same package outline but differ in internal pin mapping and thermal pad connectivity, requiring PCB redesign.

What is the maximum safe operating temperature for continuous use?

The device is rated for continuous operation up to 175 °C junction temperature, validated per AEC-Q101. At Tmb = 100 °C, continuous drain current drops to 8.9 A; thermal design must maintain Tj ≤ 175 °C using the specified 3.96 K/W Rth(j-mb) and adequate PCB copper area.

Does it include integrated body diodes, and what are their recovery characteristics?

Yes - each channel includes an intrinsic source-drain diode with 0.78 V forward voltage at 10 A and 25 °C, and 29.9 ns typical reverse recovery time (trr). These diodes support freewheeling in inductive loads but are not optimized for high-frequency synchronous rectification.

Can BUK9K89-100E be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage exceeds 0.5 V even at 175 °C, and it achieves full enhancement at VGS = 5 V. While 3.3 V may yield partial turn-on (RDS(on) ~245 mΩ at 175 °C), reliable switching requires ≥4.5 V drive; a level shifter or gate driver is recommended for 3.3 V MCU interfaces.

BUK9K89-100E,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SOT-1205, 8-LFPAK56
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
12.5A
Rds On (Max) @ Id, Vgs:
85mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
16.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1108pF @ 25V
Power - Max:
38W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56D

BUK9K89-100E,115 FAQ

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Please submit a Request for Quotation (RFQ) for BUK9K89-100E,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of BUK9K89-100E,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9K89-100E,115 is usually 5 days.

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5.How can I obtain technical support or documentation for BUK9K89-100E,115?

For technical support, including BUK9K89-100E,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9K89-100E,115 requirements.

6.How does Aetrix verify that BUK9K89-100E,115 is sourced from the original manufacturer or authorized distributors?

All BUK9K89-100E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9K89-100E,115 meets industry standards.

7.What is the process for return or replacement of BUK9K89-100E,115?

All BUK9K89-100E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9K89-100E,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9K89-100E,115 part is unused and in its original packaging.

Return procedure for BUK9K89-100E,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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