Nexperia USA Inc. BUK9M12-60EX
- Part No.:
- BUK9M12-60EX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Datasheet:
-
BUK9M12-60EX.pdf
- Description:
- MOSFET N-CH 60V 54A LFPAK33
- Quantity:
- Payment:

- Shipping:

Inventory:3,798
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK9M12-60EX from Nexperia is an AEC-Q101 qualified N-channel logic-level MOSFET in LFPAK33 (SOT1210) package, rated for 60 V VDS, 12 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, and 175 °C junction operation - designed for high-reliability automotive power switching in 12 V systems.
For engineers reviewing the BUK9M12-60EX datasheet, BUK9M12-60EX pinout, BUK9M12-60EX application, or BUK9M12-60EX equivalent, this device is selected for thermally demanding, repetitive-avalanche-capable load control where low gate drive voltage (≥0.5 V threshold at 175 °C), high peak current (216 A), and robust thermal resistance (Rth(j-mb) = 1.58 K/W) are critical.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance with true logic-level gate drive compatibility down to 5 V, enabling direct interface with microcontrollers and ASICs without level-shifting. Its LFPAK33 package integrates a thermally optimized mounting base connected to drain, supporting high-power dissipation (79 W at Tmb = 25 °C).
The device features fully specified repetitive avalanche capability (EAS = 50.5 mJ), 175 °C continuous junction rating, and Q101 qualification - confirming suitability for automotive transmission control, motor drivers, and solenoid interfaces where transient overvoltage, thermal cycling, and long-term reliability are design-critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; supports full 12 V automotive battery transients up to ISO 7637-2 Pulse 5a (75 V). |
| RDS(on) | 10–12 mΩ @ VGS = 5 V, ID = 15 A, Tj = 25 °C - Enables <1.2 W conduction loss at 35 A, critical for compact thermal design. |
| ID (continuous) | 54 A @ Tmb = 25 °C - High current capability with metal-base thermal path; derates to 38 A at Tmb = 100 °C. |
| EAS | 50.5 mJ - Single-pulse unclamped avalanche energy; allows safe operation during inductive turn-off without external snubbers. |
| Rth(j-mb) | 1.58 K/W - Low thermal resistance from junction to mounting base; enables >70% of rated power dissipation with minimal PCB copper area. |
| QGD | 7.9 nC - Gate-drain charge determines switching speed and Miller plateau duration; supports efficient 100 kHz+ PWM in motor control. |
| VGS(th) | 0.5 V min @ Tj = 175 °C - Guaranteed turn-on at elevated temperature with standard 5 V logic, eliminating gate driver complexity. |
Pinout & Package
LFPAK33 (SOT1210) is a surface-mount, single-ended power package with exposed drain mounting base and 4 source terminals + 1 gate terminal. The metal base provides low-inductance, low-thermal-resistance connection to PCB heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source leads reduce bond-wire inductance and improve current sharing; enable low-impedance return path for high di/dt loads. |
| 4 | Gate (G) | Single gate input with controlled impedance; compatible with 5 V CMOS drivers; gate charge QG(tot) = 21 nC ensures fast, predictable switching. |
| Mounting base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain; serves as primary heat transfer path and high-current drain node. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22-A114 - required for engine bay and transmission modules. |
| Repetitive avalanche rated | Rated for repeated unclamped inductive switching events (per Fig. 4); eliminates need for external avalanche protection in solenoid and motor drives. |
| 175 °C continuous junction rating | Enables operation in under-hood environments without derating; supports extended lifetime at high ambient temperatures (e.g., near exhaust manifolds). |
| True logic-level gate | VGS(th) ≥ 0.5 V at 175 °C ensures guaranteed turn-on with 5 V MCU outputs even at maximum operating temperature. |
| Low RDS(on) × QG figure-of-merit | 12 mΩ × 21 nC = 252 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V DC-DC and BLDC gate drivers. |
Applications
| Engine Control Module (ECM) Valve Driver | Automotive HVAC Blower Motor |
|---|---|
Use Scenario: Driving 12 V fuel injector or EGR valve solenoid with 20–30 A peak current and 100 Hz PWM. IC Role / Device Role / Timing Role: High-side or low-side power switch handling inductive load commutation and flyback energy recovery. Use Value: Repetitive avalanche rating absorbs solenoid turn-off energy without clamping diodes; 175 °C rating sustains operation near hot engine components. |
Use Scenario: Controlling brushed DC blower motor in cabin air system with variable-speed PWM (1–20 kHz). IC Role / Device Role / Timing Role: Low-side switching element managing bidirectional current flow and regenerative braking energy. Use Value: 54 A continuous current and 216 A pulsed rating support motor stall conditions; low RDS(on) minimizes heat generation in confined dashboard space. |
| Transmission Control Unit (TCU) Clutch Actuator | 12 V Automotive LED Headlamp Matrix |
Use Scenario: Switching hydraulic clutch solenoids in automatic transmission with frequent on/off cycles and high ambient temperature. IC Role / Device Role / Timing Role: Robust power switch delivering precise current pulses to electro-hydraulic actuators. Use Value: Q101 qualification ensures longevity across 15-year vehicle life; 1.58 K/W Rth(j-mb) enables stable thermal performance on small heatsinks. |
Use Scenario: Individual channel switching for adaptive LED headlamp segments requiring fast, reliable 12 V power control. IC Role / Device Role / Timing Role: High-speed, low-loss power switch enabling dynamic beam shaping with <50 ns switching transitions. Use Value: Low QGD (7.9 nC) and fast tr/tf (21.3/17.4 ns) minimize switching losses during high-frequency dimming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 2.2 mΩ RDS(on) @ 10 V, but requires 10 V gate drive; not logic-level; Q101 qualified. | Better conduction efficiency at high gate voltage; unsuitable for 5 V-only MCU control without level shifter. | Select when gate drive can be boosted to 10 V and lowest possible RDS(on) is prioritized over logic compatibility. |
| ON Semiconductor NTMFS5C675NL | 60 V, 5.8 mΩ RDS(on) @ 10 V; logic-level capable down to 4.5 V; AEC-Q101 qualified; PowerTrench® packaging. | Lower RDS(on) than BUK9M12-60EX at 10 V, but higher QG (32 nC); slightly larger SO-8FL footprint. | Choose when higher switching frequency (>200 kHz) is needed and board space allows SO-8FL; verify thermal interface with PCB. |
Compared with STL220N6F7 and NTMFS5C675NL, BUK9M12-60EX uniquely delivers verified 5 V logic-level operation with 12 mΩ RDS(on) and 1.58 K/W thermal resistance in LFPAK33 - making it optimal for space-constrained, thermally aggressive 12 V automotive modules where gate drive simplicity and mounting-base cooling are decisive.
Availability
BUK9M12-60EX is available at Aetrix Electronics and suitable for automotive engine control, transmission actuation, and HVAC motor control requiring stable component supply across multi-year vehicle production programs.
Supply support for BUK9M12-60EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - with leadership in automotive-qualified components and advanced packaging.
BUK9M12-60EX belongs to Nexperia's LFPAK automotive MOSFET product line, engineered specifically for high-current, high-temperature 12 V automotive power switching where AEC-Q101 compliance, avalanche ruggedness, and thermal performance are non-negotiable.
FAQ
Is BUK9M12-60EX suitable for high-side switching configurations?
No - the LFPAK33 mounting base is internally connected to drain, and the package lacks isolated source/substrate terminals required for high-side floating-gate drive. It is designed exclusively for low-side or common-source switching where drain connects to the positive rail and source ties to ground or load return.
What is the maximum allowable PCB copper area for thermal performance at 54 A continuous?
With 1.58 K/W Rth(j-mb), achieving Tj ≤ 175 °C at 54 A (79 W Ptot) requires Tmb ≤ 25 °C. This demands ≥2000 mm² of 2 oz copper directly under the mounting base, plus thermal vias to inner layers - verified in Nexperia's AN11158 thermal guidelines and SOT1210 layout recommendations.
Does BUK9M12-60EX include integrated gate protection?
No - the device has no built-in gate resistor or Zener clamp. External gate series resistance (typically 5–10 Ω) and optional 12 V gate-to-source Zener are recommended per Nexperia AN10273 to prevent dv/dt-induced false turn-on and gate oxide overstress during fast-switching or noisy automotive environments.
Can BUK9M12-60EX replace older BUK9Y series MOSFETs in existing designs?
Yes - BUK9M12-60EX shares identical LFPAK33 (SOT1210) footprint and pinout with BUK9Yxx-60E devices, and offers improved RDS(on) (12 mΩ vs. 14–16 mΩ) and tighter VGS(th) distribution. No PCB change is needed; verify gate drive timing margins due to lower QGD and faster switching.
BUK9M12-60EX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2769 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK33
BUK9M12-60EX FAQ
1.How can I place an order for BUK9M12-60EX through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9M12-60EX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9M12-60EX reliable?
The price and inventory of BUK9M12-60EX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9M12-60EX is usually 5 days.
3.What payment methods are accepted for BUK9M12-60EX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9M12-60EX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK9M12-60EX?
BUK9M12-60EX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9M12-60EX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9M12-60EX?
For technical support, including BUK9M12-60EX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9M12-60EX requirements.
6.How does Aetrix verify that BUK9M12-60EX is sourced from the original manufacturer or authorized distributors?
All BUK9M12-60EX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9M12-60EX meets industry standards.
7.What is the process for return or replacement of BUK9M12-60EX?
All BUK9M12-60EX units undergo pre-shipment inspection (PSI). If there is an issue with BUK9M12-60EX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9M12-60EX part is unused and in its original packaging.
Return procedure for BUK9M12-60EX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK9M12-60EX Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

