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Nexperia USA Inc. BUK9M12-60EX

Part No.:
BUK9M12-60EX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SOT-1210, 8-LFPAK33 (5-Lead)
Datasheet:
AetrixBUK9M12-60EX.pdf
Description:
MOSFET N-CH 60V 54A LFPAK33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,798

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Product details

Overview

BUK9M12-60EX from Nexperia is an AEC-Q101 qualified N-channel logic-level MOSFET in LFPAK33 (SOT1210) package, rated for 60 V VDS, 12 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, and 175 °C junction operation - designed for high-reliability automotive power switching in 12 V systems.

For engineers reviewing the BUK9M12-60EX datasheet, BUK9M12-60EX pinout, BUK9M12-60EX application, or BUK9M12-60EX equivalent, this device is selected for thermally demanding, repetitive-avalanche-capable load control where low gate drive voltage (≥0.5 V threshold at 175 °C), high peak current (216 A), and robust thermal resistance (Rth(j-mb) = 1.58 K/W) are critical.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance with true logic-level gate drive compatibility down to 5 V, enabling direct interface with microcontrollers and ASICs without level-shifting. Its LFPAK33 package integrates a thermally optimized mounting base connected to drain, supporting high-power dissipation (79 W at Tmb = 25 °C).

The device features fully specified repetitive avalanche capability (EAS = 50.5 mJ), 175 °C continuous junction rating, and Q101 qualification - confirming suitability for automotive transmission control, motor drivers, and solenoid interfaces where transient overvoltage, thermal cycling, and long-term reliability are design-critical.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage; supports full 12 V automotive battery transients up to ISO 7637-2 Pulse 5a (75 V).
RDS(on) 10–12 mΩ @ VGS = 5 V, ID = 15 A, Tj = 25 °C - Enables <1.2 W conduction loss at 35 A, critical for compact thermal design.
ID (continuous) 54 A @ Tmb = 25 °C - High current capability with metal-base thermal path; derates to 38 A at Tmb = 100 °C.
EAS 50.5 mJ - Single-pulse unclamped avalanche energy; allows safe operation during inductive turn-off without external snubbers.
Rth(j-mb) 1.58 K/W - Low thermal resistance from junction to mounting base; enables >70% of rated power dissipation with minimal PCB copper area.
QGD 7.9 nC - Gate-drain charge determines switching speed and Miller plateau duration; supports efficient 100 kHz+ PWM in motor control.
VGS(th) 0.5 V min @ Tj = 175 °C - Guaranteed turn-on at elevated temperature with standard 5 V logic, eliminating gate driver complexity.

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount, single-ended power package with exposed drain mounting base and 4 source terminals + 1 gate terminal. The metal base provides low-inductance, low-thermal-resistance connection to PCB heatsink.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three parallel source leads reduce bond-wire inductance and improve current sharing; enable low-impedance return path for high di/dt loads.
4 Gate (G) Single gate input with controlled impedance; compatible with 5 V CMOS drivers; gate charge QG(tot) = 21 nC ensures fast, predictable switching.
Mounting base (mb) Drain (D) Exposed copper pad electrically and thermally connected to drain; serves as primary heat transfer path and high-current drain node.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22-A114 - required for engine bay and transmission modules.
Repetitive avalanche rated Rated for repeated unclamped inductive switching events (per Fig. 4); eliminates need for external avalanche protection in solenoid and motor drives.
175 °C continuous junction rating Enables operation in under-hood environments without derating; supports extended lifetime at high ambient temperatures (e.g., near exhaust manifolds).
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures guaranteed turn-on with 5 V MCU outputs even at maximum operating temperature.
Low RDS(on) × QG figure-of-merit 12 mΩ × 21 nC = 252 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V DC-DC and BLDC gate drivers.

Applications

Engine Control Module (ECM) Valve Driver Automotive HVAC Blower Motor

Use Scenario: Driving 12 V fuel injector or EGR valve solenoid with 20–30 A peak current and 100 Hz PWM.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling inductive load commutation and flyback energy recovery.

Use Value: Repetitive avalanche rating absorbs solenoid turn-off energy without clamping diodes; 175 °C rating sustains operation near hot engine components.

Use Scenario: Controlling brushed DC blower motor in cabin air system with variable-speed PWM (1–20 kHz).

IC Role / Device Role / Timing Role: Low-side switching element managing bidirectional current flow and regenerative braking energy.

Use Value: 54 A continuous current and 216 A pulsed rating support motor stall conditions; low RDS(on) minimizes heat generation in confined dashboard space.

Transmission Control Unit (TCU) Clutch Actuator 12 V Automotive LED Headlamp Matrix

Use Scenario: Switching hydraulic clutch solenoids in automatic transmission with frequent on/off cycles and high ambient temperature.

IC Role / Device Role / Timing Role: Robust power switch delivering precise current pulses to electro-hydraulic actuators.

Use Value: Q101 qualification ensures longevity across 15-year vehicle life; 1.58 K/W Rth(j-mb) enables stable thermal performance on small heatsinks.

Use Scenario: Individual channel switching for adaptive LED headlamp segments requiring fast, reliable 12 V power control.

IC Role / Device Role / Timing Role: High-speed, low-loss power switch enabling dynamic beam shaping with <50 ns switching transitions.

Use Value: Low QGD (7.9 nC) and fast tr/tf (21.3/17.4 ns) minimize switching losses during high-frequency dimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 2.2 mΩ RDS(on) @ 10 V, but requires 10 V gate drive; not logic-level; Q101 qualified. Better conduction efficiency at high gate voltage; unsuitable for 5 V-only MCU control without level shifter. Select when gate drive can be boosted to 10 V and lowest possible RDS(on) is prioritized over logic compatibility.
ON Semiconductor NTMFS5C675NL 60 V, 5.8 mΩ RDS(on) @ 10 V; logic-level capable down to 4.5 V; AEC-Q101 qualified; PowerTrench® packaging. Lower RDS(on) than BUK9M12-60EX at 10 V, but higher QG (32 nC); slightly larger SO-8FL footprint. Choose when higher switching frequency (>200 kHz) is needed and board space allows SO-8FL; verify thermal interface with PCB.

Compared with STL220N6F7 and NTMFS5C675NL, BUK9M12-60EX uniquely delivers verified 5 V logic-level operation with 12 mΩ RDS(on) and 1.58 K/W thermal resistance in LFPAK33 - making it optimal for space-constrained, thermally aggressive 12 V automotive modules where gate drive simplicity and mounting-base cooling are decisive.

Availability

BUK9M12-60EX is available at Aetrix Electronics and suitable for automotive engine control, transmission actuation, and HVAC motor control requiring stable component supply across multi-year vehicle production programs.

Supply support for BUK9M12-60EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - with leadership in automotive-qualified components and advanced packaging.

BUK9M12-60EX belongs to Nexperia's LFPAK automotive MOSFET product line, engineered specifically for high-current, high-temperature 12 V automotive power switching where AEC-Q101 compliance, avalanche ruggedness, and thermal performance are non-negotiable.

FAQ

Is BUK9M12-60EX suitable for high-side switching configurations?

No - the LFPAK33 mounting base is internally connected to drain, and the package lacks isolated source/substrate terminals required for high-side floating-gate drive. It is designed exclusively for low-side or common-source switching where drain connects to the positive rail and source ties to ground or load return.

What is the maximum allowable PCB copper area for thermal performance at 54 A continuous?

With 1.58 K/W Rth(j-mb), achieving Tj ≤ 175 °C at 54 A (79 W Ptot) requires Tmb ≤ 25 °C. This demands ≥2000 mm² of 2 oz copper directly under the mounting base, plus thermal vias to inner layers - verified in Nexperia's AN11158 thermal guidelines and SOT1210 layout recommendations.

Does BUK9M12-60EX include integrated gate protection?

No - the device has no built-in gate resistor or Zener clamp. External gate series resistance (typically 5–10 Ω) and optional 12 V gate-to-source Zener are recommended per Nexperia AN10273 to prevent dv/dt-induced false turn-on and gate oxide overstress during fast-switching or noisy automotive environments.

Can BUK9M12-60EX replace older BUK9Y series MOSFETs in existing designs?

Yes - BUK9M12-60EX shares identical LFPAK33 (SOT1210) footprint and pinout with BUK9Yxx-60E devices, and offers improved RDS(on) (12 mΩ vs. 14–16 mΩ) and tighter VGS(th) distribution. No PCB change is needed; verify gate drive timing margins due to lower QGD and faster switching.

BUK9M12-60EX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SOT-1210, 8-LFPAK33 (5-Lead)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
11mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
2769 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK33

BUK9M12-60EX FAQ

1.How can I place an order for BUK9M12-60EX through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9M12-60EX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9M12-60EX reliable?

The price and inventory of BUK9M12-60EX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9M12-60EX is usually 5 days.

3.What payment methods are accepted for BUK9M12-60EX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9M12-60EX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9M12-60EX?

BUK9M12-60EX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9M12-60EX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9M12-60EX?

For technical support, including BUK9M12-60EX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9M12-60EX requirements.

6.How does Aetrix verify that BUK9M12-60EX is sourced from the original manufacturer or authorized distributors?

All BUK9M12-60EX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9M12-60EX meets industry standards.

7.What is the process for return or replacement of BUK9M12-60EX?

All BUK9M12-60EX units undergo pre-shipment inspection (PSI). If there is an issue with BUK9M12-60EX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9M12-60EX part is unused and in its original packaging.

Return procedure for BUK9M12-60EX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9M12-60EX Tags

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