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Nexperia USA Inc. BUK9M35-80EX

Part No.:
BUK9M35-80EX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SOT-1210, 8-LFPAK33 (5-Lead)
Datasheet:
AetrixBUK9M35-80EX.pdf
Description:
MOSFET N-CH 80V 26A LFPAK33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,852

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Product details

Overview

BUK9M35-80EX from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK33 (SOT1210) package, rated for 80 V VDS, 35 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, and 175 °C junction operation-designed for high-reliability automotive power switching in 12 V/24 V/48 V systems.

For engineers reviewing the BUK9M35-80EX datasheet, BUK9M35-80EX pinout, BUK9M35-80EX application, or BUK9M35-80EX equivalent, this device supports thermally demanding motor, lamp, and solenoid control with true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), repetitive avalanche rating, and mounting-base thermal resistance of 2.01 K/W.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching performance, with QGD = 4.9 nC and tf = 12 ns under standard test conditions (VDS = 60 V, RG(ext) = 5 Ω). Its LFPAK33 package integrates a thermally optimized mounting base connected directly to the drain, enabling efficient heat transfer to PCB copper.

The device features a robust source-drain diode with VSD = 0.78 V at IS = 5 A and Tj = 25 °C, and is qualified for automotive use per AEC-Q101 with guaranteed operation up to 175 °C junction temperature and non-repetitive avalanche energy EAS = 32.3 mJ.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 80 V - Maximum continuous drain-source blocking voltage, suitable for 48 V automotive bus transients.
RDS(on) 28–35 mΩ @ VGS = 5 V, ID = 5 A, Tj = 25 °C - Enables low conduction loss in high-current switching paths.
ID 26 A @ VGS = 5 V, Tmb = 25 °C - Continuous current capability defined at mounting base temperature, not ambient.
Ptot 62 W @ Tmb = 25 °C - Total power dissipation limit based on thermal resistance to mounting base.
Rth(j-mb) 2.01–2.43 K/W - Junction-to-mounting-base thermal resistance, critical for PCB thermal design and heatsink integration.
VGS(th) ≥ 0.5 V @ Tj = 175 °C - Ensures reliable turn-on with standard 5 V logic drivers across full automotive temperature range.
EAS 32.3 mJ - Non-repetitive avalanche energy rating, supporting robustness against inductive load switching stress.

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount plastic package with 8 leads and an exposed metal mounting base thermally and electrically connected to the drain. It provides superior thermal performance over conventional SO8 and DPAK packages via direct die-to-PCB thermal path.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt applications.
4 Gate (G) Single gate input with low input capacitance (Ciss = 1356–1804 pF) for fast, low-power switching control.
Mounting base (mb) Drain (D) Exposed copper pad electrically tied to drain and thermally coupled to PCB; requires solder mask opening and thermal vias.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST-no derating required for under-hood use.
Repetitive avalanche rating Rated for repeated inductive energy clamping without degradation, enabling simplified protection circuitry in motor drives.
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures gate turn-on margin with 3.3 V or 5 V microcontroller outputs across full operating range.
175 °C maximum junction temperature Supports operation in engine bay and transmission control modules where ambient temperatures exceed 125 °C.
Low RDS(on) × QGD figure-of-merit 35 mΩ × 4.9 nC = 171.5 mΩ·nC - balances conduction and switching losses for high-efficiency 10–100 kHz PWM operation.

Applications

Engine Cooling Fan Control Transmission Solenoid Driver

Use Scenario: PWM-controlled 24 V DC brushless fan in engine cooling module, subject to 125 °C ambient and transient overvoltage.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling up to 20 A continuous current with 20 kHz PWM frequency.

Use Value: Low RDS(on) minimizes I²R heating; 175 °C rating avoids thermal shutdown; avalanche ruggedness absorbs back-EMF spikes.

Use Scenario: 48 V transmission control unit driving linear solenoids requiring precise current regulation and fast response.

IC Role / Device Role / Timing Role: Low-side switching element with integrated freewheeling diode for bidirectional current control.

Use Value: Fast fall time (12 ns) and low QGD enable accurate current shaping; VGS(th) stability ensures consistent turn-on timing at elevated temperature.

Start-Stop System Load Switch Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: 12 V battery load disconnect during engine cranking to prevent voltage sag in start-stop vehicles.

IC Role / Device Role / Timing Role: High-current load switch activated by MCU GPIO, requiring <100 µs turn-on and robust short-circuit tolerance.

Use Value: 106 A peak drain current (IDM) handles cranking surge; low gate charge enables fast switching with minimal driver overhead.

Use Scenario: Three-phase inverter half-bridge leg in 48 V EPS system, operating at 10–50 kHz with high dv/dt and thermal cycling.

IC Role / Device Role / Timing Role: N-channel power switch in high-side or low-side position, paired with complementary MOSFET and gate driver.

Use Value: LFPAK33's low Rth(j-mb) maintains junction temperature below 150 °C under 15 A RMS load; repetitive avalanche withstands phase current reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V VDS, 0.75 mΩ RDS(on), PowerFLAT 5x6 package, no AEC-Q101 certification Limited to 24 V systems; lacks automotive qualification and high-temp VGS(th) guarantee Select only for cost-sensitive 24 V industrial designs where AEC-Q101 is not mandated.
ON Semiconductor NTMFS5C670NL 60 V VDS, 1.35 mΩ RDS(on), PowerTrench® 5x6, AEC-Q101 qualified, but VGS(th) min = 1.2 V at 25 °C (not specified at 175 °C) Higher RDS(on) at 80 V rating; gate threshold uncertainty above 125 °C limits logic-level compatibility Preferable for lower-voltage 48 V systems needing ultra-low RDS(on), but verify gate drive margin at max junction temperature.

Compared with STL220N4F7AG and NTMFS5C670NL, BUK9M35-80EX uniquely delivers 80 V blocking, verified 0.5 V VGS(th) at 175 °C, and AEC-Q101 compliance in a thermally superior LFPAK33 package-making it the only drop-in solution for 48 V automotive switching where both voltage headroom and high-temperature logic compatibility are mandatory.

Availability

BUK9M35-80EX is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and 48 V mild-hybrid systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK9M35-80EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

BUK9M35-80EX belongs to Nexperia's Automotive Logic Level MOSFET product line, engineered specifically for thermally aggressive automotive power switching applications requiring AEC-Q101 compliance, 175 °C operation, and robust avalanche performance.

FAQ

What is the maximum continuous drain current for BUK9M35-80EX at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is 19 A (per Table 5, Limiting Values). This value is derived from thermal derating curves in Figure 2 and reflects real-world PCB thermal performance-not ambient temperature ratings. The device must be mounted on a minimum 200 mm² 2-oz copper area with ≥6 thermal vias for this rating to be achievable.

Is BUK9M35-80EX pin-compatible with other LFPAK33 MOSFETs like BUK9Y8R5-40E?

No-BUK9M35-80EX uses the standard LFPAK33 (SOT1210) pinout (Pins 1–3 = Source, Pin 4 = Gate, mounting base = Drain), but BUK9Y8R5-40E has identical pinning. However, electrical differences-including 40 V vs. 80 V VDS, 0.85 mΩ vs. 35 mΩ RDS(on), and different gate charge-preclude functional interchangeability without circuit revalidation.

Does BUK9M35-80EX include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic source-drain diode with forward voltage VSD = 0.78 V at IS = 5 A and Tj = 25 °C (Table 10), reverse recovery time trr = 21 ns, and recovered charge Qr = 21.6 nC. These values support efficient freewheeling in inductive loads, though external Schottky diodes may still be needed for ultra-fast or zero-recovery requirements.

How does the mounting base connection affect PCB layout and thermal design?

The mounting base is electrically connected to the drain and serves as the primary thermal path. PCB layout must expose the base pad with no solder mask, connect it to ≥200 mm² internal/external copper pour, and use ≥6 x 0.3 mm vias filled with thermal epoxy to inner ground or thermal planes. Failure to implement this results in junction temperature exceeding 175 °C even at moderate power levels.

BUK9M35-80EX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SOT-1210, 8-LFPAK33 (5-Lead)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
13.5 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
1804 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
62W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK33

BUK9M35-80EX FAQ

1.How can I place an order for BUK9M35-80EX through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9M35-80EX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9M35-80EX reliable?

The price and inventory of BUK9M35-80EX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9M35-80EX is usually 5 days.

3.What payment methods are accepted for BUK9M35-80EX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9M35-80EX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9M35-80EX?

BUK9M35-80EX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9M35-80EX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9M35-80EX?

For technical support, including BUK9M35-80EX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9M35-80EX requirements.

6.How does Aetrix verify that BUK9M35-80EX is sourced from the original manufacturer or authorized distributors?

All BUK9M35-80EX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9M35-80EX meets industry standards.

7.What is the process for return or replacement of BUK9M35-80EX?

All BUK9M35-80EX units undergo pre-shipment inspection (PSI). If there is an issue with BUK9M35-80EX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9M35-80EX part is unused and in its original packaging.

Return procedure for BUK9M35-80EX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9M35-80EX Tags

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