Nexperia USA Inc. BUK9M5R0-40HX
- Part No.:
- BUK9M5R0-40HX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Datasheet:
-
BUK9M5R0-40HX.pdf
- Description:
- MOSFET N-CH 40V 85A LFPAK33
- Quantity:
- Payment:

- Shipping:

Inventory:1,388
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUK9M5R0-40HX from Nexperia is an automotive-qualified N-channel logic-level MOSFET in LFPAK33 (SOT1210) package, rated for 40 V drain-source voltage, 5.0 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and 85 A continuous drain current at Tmb = 25 °C. It employs Trench 9 superjunction technology and copper-clip LFPAK construction for high power density and robustness in 12 V automotive systems.
For engineers reviewing the BUK9M5R0-40HX datasheet, BUK9M5R0-40HX pinout, BUK9M5R0-40HX application, or BUK9M5R0-40HX equivalent, key selection criteria include its AEC-Q101 qualification at 175 °C, repetitive avalanche rating, gull-wing lead form for AOI compatibility, and thermal resistance of 1.61 K/W (junction-to-mounting base).
Technical Context
This MOSFET uses Trench 9 TrenchMOS technology to achieve low RDS(on) and high power density while maintaining fast switching performance: QG(tot) = 28 nC (typ), QGD = 2.9 nC (typ) at VGS = 4.5 V, and Ciss = 2.63 pF (typ). Its gate threshold voltage ranges from 0.7 V (min at Tj = 175 °C) to 2.15 V (max at Tj = 25 °C), enabling reliable turn-on with standard 3.3 V/5 V logic drivers.
The device integrates a source-drain diode with soft reverse recovery (S = 0.66 typ), 18 nC recovered charge, and 24 ns trr - critical for reducing EMI and voltage spikes in DC-DC and motor drive applications. Mounting base (drain-connected) enables direct thermal coupling to heatsinks, supported by Rth(j-mb) = 1.61 K/W (typ) and 83 W total power dissipation at Tmb = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) | 3.9 mΩ (typ) at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 20 A, minimizing thermal stress in compact PCB layouts. |
| ID | 85 A continuous at Tmb = 25 °C - Validated under application testing; practical current limited by PCB copper area and thermal interface design. |
| EAS | 33 mJ non-repetitive avalanche energy - Supports unclamped inductive switching events without failure, enhancing system reliability in motor control. |
| Rth(j-mb) | 1.61 K/W (typ) - Low thermal resistance enables efficient heat transfer from die to mounting surface, reducing junction temperature rise per watt. |
| QGD | 2.9 nC (typ) at VGS = 4.5 V - Low gate-drain charge minimizes Miller effect, improving switching controllability and reducing risk of spurious turn-on. |
| VGS(th) | 1.77 V (typ) at Tj = 25 °C - Logic-level threshold ensures full enhancement with 3.3 V microcontroller GPIOs, eliminating need for level-shifting circuitry. |
Pinout & Package
LFPAK33 (SOT1210) is a single-ended surface-mount package with gull-wing leads and exposed copper mounting base. The package features 8 leads (4 source pins + 1 gate + 1 drain-connected mounting base), optimized for high-current routing and automated optical inspection (AOI).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, S | Source | Four parallel source terminals reduce bond-wire inductance and improve current sharing; connected internally to source metallization. |
| 4 | Gate | Single gate input with low RG (0.8 Ω typ); designed for direct drive from MCU GPIO or gate driver IC without external series resistance. |
| mb | Mounting base | Drain-connected copper clip; serves as primary thermal path and high-current drain connection - must be soldered to large copper pour or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified at 175 °C | Validated for under-hood automotive environments including engine control units and body electronics where ambient temperatures exceed 125 °C. |
| Trench 9 superjunction architecture | Delivers 5.0 mΩ RDS(on) at 40 V rating - 30% lower on-resistance than prior-generation trench MOSFETs in same footprint. |
| Repetitive avalanche rated | Withstands repeated inductive turn-off events up to IAS = 70 A and EAS = 33 mJ, eliminating need for external snubbers in medium-power motor drives. |
| Soft-recovery source-drain diode | S-factor = 0.66 (typ) reduces voltage overshoot and EMI during freewheeling, critical for LED lighting and DC-DC converter stability. |
| Gull-wing lead geometry | Enables high-yield reflow soldering and automated optical inspection (AOI); eliminates tombstoning risk common with narrow-pitch QFN packages. |
Applications
| Automotive Body Control Module | 12 V DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-side load switching for HVAC actuators, door locks, and seat positioners in modern BCMs. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver; operates in linear and saturated regions during inrush and steady-state. Use Value: 5.0 mΩ RDS(on) limits conduction loss to <2.5 W at 70 A peak inrush, while AEC-Q101 qualification ensures 15-year field reliability. |
Use Scenario: Primary-side synchronous rectifier in 12 V–5 V buck converters powering ADAS sensors and infotainment ECUs. IC Role / Device Role / Timing Role: Fast-switching power transistor with 22 ns rise time and low QGD, enabling >500 kHz operation with minimal switching loss. Use Value: 2.9 nC QGD at 4.5 V reduces Miller plateau duration, improving duty cycle control accuracy and light-load efficiency. |
| Automotive LED Headlamp Driver | Electric Power Steering (EPS) Motor Phase Leg |
|
Use Scenario: PWM-controlled high-current switch for adaptive front-lighting systems requiring precise dimming and fault tolerance. IC Role / Device Role / Timing Role: Low-side switching element in constant-current LED string drivers; handles 5–10 A continuous with 100 kHz PWM. Use Value: Soft-recovery diode (S = 0.66) suppresses voltage spikes during PWM turn-off, preventing false overvoltage trips in safety-critical lighting modules. |
Use Scenario: Half-bridge phase-leg switch in 12 V EPS motor inverters, operating with bidirectional current and regenerative braking. IC Role / Device Role / Timing Role: Bidirectional power switch handling 60 A peak phase current; source-drain diode conducts reverse current during regeneration. Use Value: 18 nC Qr and 24 ns trr minimize reverse recovery losses, reducing junction temperature rise by up to 12 °C versus standard MOSFETs in 10 kHz PWM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 4.7 mΩ RDS(on) at VGS = 10 V, but only AEC-Q101 qualified to 150 °C; no repetitive avalanche rating. | Limited to non-safety-critical body electronics; unsuitable for EPS or powertrain where unclamped inductive switching occurs. | Select when cost sensitivity outweighs need for 175 °C operation or avalanche ruggedness. |
| ON Semiconductor NTMFS4C09NT1G | 4.9 mΩ RDS(on); SO-8FL package (not LFPAK33); Rth(j-mb) = 2.5 K/W - 55% higher thermal resistance than BUK9M5R0-40HX. | Requires larger PCB copper area for equivalent thermal performance; incompatible with existing LFPAK33 footprints. | Choose only if legacy SO-8FL board space constraints prevent LFPAK33 adoption. |
Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK9M5R0-40HX delivers superior thermal performance (1.61 K/W vs ≥2.5 K/W), full 175 °C AEC-Q101 compliance, and verified repetitive avalanche capability - making it the preferred choice for high-reliability 12 V automotive power stages where thermal headroom and fault tolerance are critical.
Availability
BUK9M5R0-40HX is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, LED headlamp drivers, and electric power steering motor drives requiring stable component supply across extended product lifecycles.
Supply support for BUK9M5R0-40HX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade MOSFETs, ESD protection, and logic ICs.
BUK9M5R0-40HX belongs to Nexperia's LFPAK automotive MOSFET product line, engineered specifically for high-current, high-temperature 12 V vehicle networks - emphasizing robustness, manufacturability, and seamless integration into automated SMT lines.
FAQ
Is BUK9M5R0-40HX pin-compatible with other LFPAK33 MOSFETs?
Yes - BUK9M5R0-40HX uses the standardized SOT1210 footprint with identical 0.65 mm lead pitch and mounting base layout. It shares mechanical compatibility with all Nexperia LFPAK33 devices, enabling drop-in replacement within the same voltage/current class, provided gate drive and thermal design accommodate differences in RDS(on) and QG.
What is the maximum recommended PCB copper area for the mounting base?
Nexperia recommends a minimum 200 mm² exposed copper pad (20 mm × 10 mm) with ≥2 oz copper thickness and ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to internal ground/power planes. This achieves ≤2.2 K/W system-level thermal resistance from junction to ambient at 25 °C still air.
Does BUK9M5R0-40HX require a gate resistor for driving with a 3.3 V MCU?
No external gate resistor is required for basic on/off switching with 3.3 V GPIOs, as VGS(th) = 1.77 V (typ) ensures full enhancement. However, a 10 Ω series resistor is recommended to dampen ringing during high-speed PWM (>200 kHz) and limit peak gate current during fast transitions.
Can BUK9M5R0-40HX replace older BUK9Yxx-40H series parts?
Yes - BUK9M5R0-40HX is a direct functional and mechanical upgrade to BUK9Y5R0-40H, offering 15% lower RDS(on), improved thermal resistance (1.61 K/W vs 1.85 K/W), and enhanced avalanche ruggedness (33 mJ vs 28 mJ). No PCB redesign is needed; only firmware timing adjustments may be required for optimized gate drive.
BUK9M5R0-40HX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 85A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- +16V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 83W
- Operating Temperature:
- 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK33
BUK9M5R0-40HX FAQ
1.How can I place an order for BUK9M5R0-40HX through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9M5R0-40HX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9M5R0-40HX reliable?
The price and inventory of BUK9M5R0-40HX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9M5R0-40HX is usually 5 days.
3.What payment methods are accepted for BUK9M5R0-40HX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9M5R0-40HX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK9M5R0-40HX?
BUK9M5R0-40HX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9M5R0-40HX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9M5R0-40HX?
For technical support, including BUK9M5R0-40HX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9M5R0-40HX requirements.
6.How does Aetrix verify that BUK9M5R0-40HX is sourced from the original manufacturer or authorized distributors?
All BUK9M5R0-40HX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9M5R0-40HX meets industry standards.
7.What is the process for return or replacement of BUK9M5R0-40HX?
All BUK9M5R0-40HX units undergo pre-shipment inspection (PSI). If there is an issue with BUK9M5R0-40HX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9M5R0-40HX part is unused and in its original packaging.
Return procedure for BUK9M5R0-40HX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUK9M5R0-40HX Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

