Nexperia USA Inc. BUK9M6R6-30EX

Overview

BUK9M6R6-30EX from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK33 (SOT1210) package, designed for 12 V automotive power switching. It delivers 6.6 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, supports 70 A continuous drain current at T_mb = 25 °C, and operates up to 175 °C junction temperature - enabling robust motor, lamp, and solenoid control in engine bays and transmission modules.

For engineers reviewing the BUK9M6R6-30EX datasheet, BUK9M6R6-30EX pinout, BUK9M6R6-30EX application, or BUK9M6R6-30EX equivalent, key selection criteria include its true logic-level gate (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche rating, 1.82 K/W junction-to-mounting-base thermal resistance, and qualification for thermally demanding automotive environments.

Technical Context

This MOSFET uses TrenchMOS technology and features a 4-terminal LFPAK33 layout with three source pins and one gate pin, where the mounting base is electrically connected to the drain. Its gate threshold voltage remains functional across -55 °C to 175 °C, and it sustains non-repetitive avalanche energy of 53 mJ under unclamped conditions.

The device exhibits low dynamic parameters: 7.8 nC Q_GD, 18 nC total gate charge, and 22.3 ns fall time with 5 Ω external gate resistor - supporting fast, efficient switching in high-frequency PWM loads such as electric power steering and HVAC actuators.

Key Specifications

Pinout & Package

Package: LFPAK33 (SOT1210), surface-mount plastic package with exposed drain mounting base for enhanced thermal performance and mechanical robustness in automotive vibration environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N3LLH6 and IRL8721PBF, BUK9M6R6-30EX uniquely combines logic-level 5 V drive, AEC-Q101 qualification, 1.82 K/W thermal resistance, and repetitive avalanche capability - making it the only drop-in solution for space-constrained, thermally aggressive automotive power stages requiring zero gate-level translation.

Availability

BUK9M6R6-30EX is available at Aetrix Electronics and suitable for automotive engine control units, transmission control modules, and electric power steering systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier-1 OEM programs.

Supply support for BUK9M6R6-30EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.

This device belongs to Nexperia's LFPAK automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V vehicle networks - emphasizing ruggedness, thermal efficiency, and seamless integration with 3.3 V/5 V microcontrollers.

FAQ

Is BUK9M6R6-30EX pin-compatible with other LFPAK33 MOSFETs?

Yes - it shares the SOT1210 footprint and 4-pin terminal arrangement (3×S, 1×G, drain-connected mounting base) with all Nexperia LFPAK33 logic-level MOSFETs, including BUK9Yx series. Mechanical compatibility enables direct PCB reuse, though electrical parameters like R_DS(on) and Q_G must be verified for functional equivalence.

What is the maximum allowable mounting base temperature for continuous operation?

The datasheet specifies continuous drain current derating begins at T_mb = 25 °C, with 54.7 A supported at T_mb = 100 °C and zero current at T_mb = 200 °C (Fig. 2). For reliable long-term operation, keep T_mb ≤ 125 °C to maintain junction temperature below 175 °C under worst-case power dissipation.

Does BUK9M6R6-30EX include integrated gate protection?

No - it does not integrate gate Zener clamping or series resistance. External gate protection (e.g., 10–22 Ω series resistor and 12 V Zener to source) is required in noisy automotive environments to prevent gate oxide damage from ESD or load dump transients exceeding ±15 V absolute maximum rating.

Can this MOSFET be used in synchronous rectification topologies?

Yes - its low R_DS(on), fast switching (22.3 ns fall time), and source-drain diode with 1.2 V forward voltage at 20 A enable use as a synchronous rectifier in 12 V DC-DC converters. However, body diode reverse recovery charge (Q_r = 10.6 nC) must be managed in high-frequency designs to avoid cross-conduction losses.