Nexperia USA Inc. BUK9V13-40HX

Overview

BUK9V13-40HX from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, configured as an integrated half-bridge with internal S1–D2 connection. It delivers 40 V V_DS, 13 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and supports 42 A continuous drain current at T_mb = 25 °C - designed for high-efficiency PWM motor control in 12 V automotive systems.

For engineers reviewing the BUK9V13-40HX datasheet, BUK9V13-40HX pinout, BUK9V13-40HX application, or BUK9V13-40HX equivalent, key selection criteria include its AEC-Q101 qualification, half-bridge topology, low R_DS(on) at 4.5 V gate drive, thermal resistance of 3.23 K/W (j–mb), and repetitive avalanche rating - critical for brushless DC motor drivers and DC–DC converters requiring robust switching under transient stress.

Technical Context

This device integrates two trench-based N-channel MOSFETs in a single LFPAK56D package with fixed internal interconnection: source of FET1 (S1) tied to drain of FET2 (D2), forming a monolithic half-bridge. Its Trench 9 silicon enables low conduction loss and superior unclamped inductive switching (UIS) performance, validated to 10.6 mJ non-repetitive avalanche energy at I_AS = 39.9 A.

The LFPAK56D copper-clip construction provides low parasitic inductance and enhanced thermal transfer to the mounting base, supporting high-frequency PWM operation up to 100 kHz in automotive body control modules and powertrain subsystems where layout compactness and thermal reliability are mandatory.

Key Specifications

Pinout & Package

LFPAK56D (SOT1205) is a surface-mount, copper-clip package with gull-wing leads and 8 terminals. Its optimized thermal path delivers 3.23 K/W junction-to-mounting-base resistance and supports automated optical inspection (AOI) due to lead geometry.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge MOSFET applications.

Compared with BTS7200-2EPP, BUK9V13-40HX offers lower conduction loss and higher peak current handling but requires external gate drivers and fault management. Against NVHL130N04M, it delivers verified automotive reliability, tighter R_DS(on) tolerance, and reduced PCB area via monolithic integration.

Availability

BUK9V13-40HX is available at Aetrix Electronics and suitable for automotive powertrain control, brushed/BLDC motor drives, and LED lighting systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BUK9V13-40HX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, reliable discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

BUK9V13-40HX belongs to Nexperia's AEC-Q101-qualified LFPAK portfolio, engineered specifically for space-constrained, thermally demanding automotive power switching applications including motor control and DC–DC conversion.

FAQ

What is the maximum operating junction temperature for BUK9V13-40HX?

The absolute maximum junction temperature is 175 °C, and the device is fully characterized across -55 °C to +175 °C. Thermal derating begins at T_mb > 25 °C per Figure 2; at T_mb = 100 °C, continuous drain current drops to 30 A. Operation beyond 175 °C risks permanent parametric shift or bond wire failure.

Can BUK9V13-40HX be driven directly by a 3.3 V microcontroller GPIO?

No - while it is a logic-level MOSFET, its R_DS(on) rises significantly below 4.5 V: 16.9 mΩ typ at V_GS = 4.5 V and T_j = 25 °C, but exceeds 32.8 mΩ at V_GS = 4.5 V and T_j = 175 °C. A 3.3 V drive yields insufficient enhancement; a dedicated gate driver or level shifter is required for reliable switching.

Is the internal S1–D2 connection accessible for external modification?

No - the S1–D2 interconnection is formed within the LFPAK56D package using internal copper clips and is not externally accessible or configurable. This monolithic half-bridge topology is fixed and cannot be reconfigured as independent FETs or full-bridge stages.

Does BUK9V13-40HX include integrated ESD or overtemperature protection?

No - it is a bare power MOSFET without on-die protection circuitry. External gate resistors, TVS diodes, and thermal monitoring (e.g., NTC on heatsink) must be implemented per application requirements. Its AEC-Q101 qualification covers process robustness, not functional safety features.