Nexperia USA Inc. BUK9Y07-30B,115
- Part No.:
- BUK9Y07-30B,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK9Y07-30B,115.pdf
- Description:
- MOSFET N-CH 30V 75A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:2,955
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Product details
Overview
BUK9Y07-30B from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 4.9 mΩ RDS(on) at VGS = 5 V and ID = 25 A, and is AEC-Q101 qualified for automotive critical power switching applications including solenoids, lamps, and 12 V motor loads.
For engineers reviewing the BUK9Y07-30B datasheet, BUK9Y07-30B pinout, BUK9Y07-30B application, or BUK9Y07-30B equivalent, this device is selected for thermally demanding 12 V systems requiring low gate-drive voltage compatibility, high avalanche energy (198 mJ), and robust thermal resistance (1.42 K/W j-mb).
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive (VGS(th) = 1.1–2.0 V at 25 °C), enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting. Its source-connected mounting base provides low-inductance, high-current path routing and efficient heat transfer to PCB copper.
The device features unclamped inductive switching capability with 198 mJ non-repetitive avalanche energy, and exhibits stable RDS(on) up to 175 °C (13.3 mΩ max at Tj = 175 °C). Dynamic parameters include QGD = 12.4 nC and Ciss = 1580–2500 pF, supporting fast switching in PWM-controlled automotive loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems with load-dump margin. |
| ID (continuous) | 75 A at Tmb = 25 °C - High-current capability enabled by LFPAK's low thermal resistance and triple-source-pin layout. |
| RDS(on) | 4.9 mΩ typ at VGS = 5 V, ID = 25 A, Tj = 25 °C - Low conduction loss reduces power dissipation and heatsink requirements in high-duty-cycle switching. |
| Tj max | 175 °C - Extended junction temperature rating supports operation in under-hood environments without derating penalties. |
| EAS | 198 mJ - Non-repetitive avalanche energy enables reliable handling of inductive kickback in solenoid and motor control without external snubbers. |
| Rth(j-mb) | 1.42 K/W - Thermal resistance from junction to mounting base allows direct PCB copper cooling, eliminating need for mechanical heatsinks in many designs. |
| QGD | 12.4 nC - Gate-drain charge determines Miller plateau duration; enables predictable turn-off timing in high-side or half-bridge configurations. |
Pinout & Package
Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base connected to drain. Dimensions: 5.0 × 3.3 × 1.3 mm (L × W × H); thermal pad area optimized for soldered PCB copper thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 - S | Source | Three parallel source terminals reduce bond-wire inductance and increase current-carrying capacity; directly soldered to PCB ground plane. |
| 4 - G | Gate | Single gate input with low input capacitance (Ciss ≈ 1.6–2.5 nF); compatible with standard logic-level drivers and microcontroller GPIOs. |
| Mounting base | Drain | Exposed metal pad electrically connected to drain; serves as primary thermal and high-current path to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.1–2.0 V at 25 °C enables direct 3.3 V/5 V MCU control without gate driver ICs. |
| AEC-Q101 qualification | Qualified per automotive stress test standard for mission-critical power switching in engine control, body electronics, and ADAS subsystems. |
| Triple-source terminal layout | Three dedicated source pins minimize parasitic inductance and improve current sharing during high di/dt switching events. |
| 175 °C junction rating | Enables uninterrupted operation in high-ambient under-hood locations (e.g., near exhaust manifolds or turbochargers). |
| 198 mJ avalanche energy | Supports robust unclamped inductive switching in relay replacement, fuel injector, and HVAC blower motor applications. |
Applications
| Fuel Injector Driver | Automotive HVAC Blower Motor |
|---|---|
|
Use Scenario: High-speed, high-reliability switching of 12 V fuel injectors in gasoline direct injection (GDI) engines. IC Role / Device Role / Timing Role: Primary power switch controlling coil energization/de-energization with precise pulse-width modulation. Use Value: 198 mJ avalanche ruggedness absorbs inductive flyback without snubber circuits; 175 °C rating ensures reliability near hot engine blocks. |
Use Scenario: PWM-controlled 12 V DC blower motor in climate control systems with variable speed demand. IC Role / Device Role / Timing Role: Low-loss main switch in half-bridge or high-side configuration delivering up to 75 A peak current. Use Value: 4.9 mΩ RDS(on) minimizes conduction loss at full speed; triple-source pins reduce switching losses during rapid PWM transitions. |
| Body Control Module Load Switch | Start-Stop System Solenoid Control |
|
Use Scenario: Centralized power distribution for lighting, door locks, and window lifters in modern BCM architectures. IC Role / Device Role / Timing Role: High-current protected load switch with integrated diagnostics via current sensing and thermal shutdown. Use Value: AEC-Q101 qualification ensures functional safety compliance; 1.42 K/W Rth(j-mb) enables compact PCB thermal design without discrete heatsinks. |
Use Scenario: Engagement/disengagement control of starter solenoid in 12 V start-stop systems with frequent cycling. IC Role / Device Role / Timing Role: Robust power switch handling high inrush currents (up to 356 A peak) and repeated inductive transients. Use Value: 356 A peak drain current rating and 175 °C operation support >300,000 cycles in stop-start duty; low VGS(th) ensures clean turn-on at cold cranking voltages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A, RDS(on) = 1.7 mΩ @ VGS = 10 V; requires 10 V gate drive for optimal RDS(on); not logic-level at 5 V. | Higher current capacity but less suitable for 3.3 V MCU interfaces; better for high-efficiency, high-power modules with dedicated gate drivers. | Select when system uses 10 V gate drive and demands lower RDS(on) at cost of higher gate charge and complexity. |
| IRL8721PBF | 30 V, 71 A, RDS(on) = 5.8 mΩ @ VGS = 5 V; TO-220AB package; Rth(j-c) = 2.0 K/W; no AEC-Q101 qualification. | Lacks automotive qualification and thermal performance; requires mechanical heatsink; larger footprint than LFPAK. | Acceptable for non-automotive industrial 12 V switching where qualification and board space are not constraints. |
Compared with STL220N3LLH6 and IRL8721PBF, the BUK9Y07-30B uniquely balances logic-level drive, AEC-Q101 qualification, LFPAK thermal efficiency, and 198 mJ avalanche ruggedness-making it optimal for space-constrained, thermally aggressive automotive power nodes without gate driver overhead.
Availability
BUK9Y07-30B is available at Aetrix Electronics and suitable for automotive body control modules, start-stop solenoid drivers, and HVAC blower motor controllers requiring stable component supply across extended production lifecycles.
Supply support for BUK9Y07-30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.
The BUK9Y07-30B belongs to Nexperia's TrenchMOS automotive logic-level FET product line, engineered specifically for robust, low-voltage gate-driven power switching in harsh under-hood and chassis-mounted automotive ECUs.
FAQ
Is BUK9Y07-30B suitable for 3.3 V microcontroller gate drive?
Yes. With VGS(th) ranging from 1.1 V to 2.0 V at 25 °C and guaranteed RDS(on) of 8 mΩ at VGS = 4.5 V, the device fully turns on using standard 3.3 V GPIO outputs. Its logic-level design eliminates need for external level shifters or gate drivers in most automotive MCU interfaces.
What is the maximum PCB copper area required for thermal management?
No minimum copper area is mandated, but Nexperia recommends ≥1000 mm² of 2 oz copper connected to the mounting base for continuous 75 A operation at Tmb = 25 °C. Thermal performance scales with copper area: doubling area improves power dissipation by ~15% due to reduced Rth(m-b).
Does BUK9Y07-30B include integrated ESD protection?
No. The device does not integrate on-chip ESD protection diodes. External TVS or RC networks are recommended on gate and drain lines in automotive environments per ISO 10605, especially when interfacing with long harnesses or unshielded sensors.
Can BUK9Y07-30B replace older BUK9Y07-40B in existing designs?
No. Although both share LFPAK packaging and logic-level behavior, the BUK9Y07-40B is rated for 40 V VDS and has different RDS(on) and thermal characteristics. Substitution requires validation of voltage margin, avalanche energy, and SOA under actual load conditions-especially during load dump events.
BUK9Y07-30B,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 28.1 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 105W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK9Y07-30B,115 FAQ
1.How can I place an order for BUK9Y07-30B,115 through Aetrix?
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6.How does Aetrix verify that BUK9Y07-30B,115 is sourced from the original manufacturer or authorized distributors?
All BUK9Y07-30B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y07-30B,115 meets industry standards.
7.What is the process for return or replacement of BUK9Y07-30B,115?
All BUK9Y07-30B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y07-30B,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9Y07-30B,115 part is unused and in its original packaging.
Return procedure for BUK9Y07-30B,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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