Nexperia USA Inc. BUK9Y104-100B,115

Overview

BUK9Y104-100B from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 100 V drain-source voltage, 14.8 A continuous drain current at 25 °C mounting base temperature, and 175 °C junction operation. It delivers 86–99 mΩ R_DS(on) at V_GS = 10 V and 91–104 mΩ at V_GS = 5 V, enabling direct drive from 5 V microcontrollers in automotive power switching applications.

For engineers reviewing the BUK9Y104-100B datasheet, BUK9Y104-100B pinout, BUK9Y104-100B application, or BUK9Y104-100B equivalent, key selection criteria include its AEC-Q101 qualification, 2.53 K/W junction-to-mounting-base thermal resistance, non-repetitive avalanche energy rating of 35 mJ, and suitability for 12 V/24 V solenoid drivers and DC-DC converter high-side switches.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance with logic-level gate drive compatibility-V_GS(th) ranges from 1.25 V to 2.15 V at 25 °C and remains functional down to 0.5 V at 175 °C. Its source-drain diode supports freewheeling in inductive loads, with V_SD = 0.85–1.2 V at 5 A and T_j = 25 °C.

The LFPAK package integrates a thermally optimized mounting base connected to the drain, enabling efficient heat transfer to PCB copper. Dynamic parameters include Q_GD = 4.7 nC and C_iss = 854–1139 pF, supporting fast switching in PWM-controlled automotive subsystems up to 100 V bus systems.

Key Specifications

Pinout & Package

Package: SOT669 (LFPAK), plastic single-ended surface-mounted package with exposed mounting base connected to drain. Optimized for high-power density and thermal performance in automotive PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N6F7 and IRL8721PBF, BUK9Y104-100B uniquely balances 100 V capability, AEC-Q101 compliance, and logic-level drive in a thermally efficient LFPAK package-making it the only option qualified for 12 V/24 V automotive power switching where voltage margin and under-hood reliability are mandatory.

Availability

BUK9Y104-100B is available at Aetrix Electronics and suitable for automotive solenoid drivers, 12 V/24 V DC-DC converter high-side switches, and body control module load switching requiring stable component supply across extended production lifecycles.

Supply support for BUK9Y104-100B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and automotive-grade quality.

BUK9Y104-100B belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for automotive power management where robustness, low gate drive voltage, and thermal resilience are essential.

FAQ

Is BUK9Y104-100B suitable for 42 V automotive systems?

Yes. With a 100 V V_DS rating and AEC-Q101 qualification, BUK9Y104-100B supports 42 V architectures-including transient overvoltage conditions like ISO 7637-2 load dump pulses-while maintaining safe operating area integrity up to 175 °C junction temperature.

What is the recommended gate resistor value for PWM switching at 100 kHz?

A 10 Ω gate resistor is validated in the datasheet for V_DS = 30 V, R_L = 6 Ω, and V_GS = 5 V, yielding td(on) = 15 ns and tf = 6 ns. For 100 kHz operation, this value balances switching speed and gate driver stress; increase to 22–47 Ω if EMI reduction or shoot-through margin is prioritized.

Does the mounting base require electrical isolation from the PCB?

No. The mounting base is internally connected to the drain terminal and must be soldered directly to a large copper pour acting as both thermal sink and drain node. Electrical isolation would compromise thermal performance and violate the device's thermal design intent per R_th(j-mb) = 2.53 K/W specification.

Can BUK9Y104-100B replace a standard 10 V gate MOSFET in an existing 5 V design?

Yes-provided layout accommodates the LFPAK footprint and thermal mass. Its V_GS(th) (1.25–2.15 V) and R_DS(on) (91–104 mΩ @ 5 V) ensure full enhancement and low conduction loss where legacy MOSFETs require gate boosting. Verify SOA limits under peak current and avalanche conditions per Figure 3 and Figure 2.