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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK9Y11-30B,115

Name: BUK9Y11-30B,115
Brand: Nexperia USA Inc.
SKU: BUK9Y11-30B,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK9Y11-30B,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: BUK9Y11-30B,115.pdf

Description:: MOSFET N-CH 30V 59A LFPAK56

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Product details

Overview

BUK9Y11-30B,115 from Nexperia is an N-channel enhancement-mode TrenchMOS power FET in LFPAK (SOT669) package, rated for 30 V V_DS, 9.3 mΩ R_DS(on) at 5 V_GS, and 59 A continuous drain current at T_mb = 25 °C. It features Q101 automotive qualification, 175 °C junction rating, and logic-level gate drive compatibility - deployed in 12 V automotive load switching for motors, lamps, and solenoids.

For engineers reviewing the BUK9Y11-30B,115 datasheet, BUK9Y11-30B,115 pinout, BUK9Y11-30B,115 application, or BUK9Y11-30B,115 equivalent, key selection criteria include avalanche ruggedness (112 mJ E_DS(AL)S), thermal resistance (R_th(j-mb) = 2 K/W), gate charge (Q_G(tot) = 16.5 nC), and automotive-grade reliability under transient load conditions.

Technical Context

This device uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to achieve low on-resistance with robust avalanche capability. Its gate threshold voltage (V_GS(th) = 1.1–2.0 V at 25 °C) ensures reliable turn-on with standard 5 V logic controllers, while its 175 °C maximum junction temperature supports operation in under-hood environments.

The integrated source-drain diode exhibits 0.85–1.2 V forward voltage at 25 A and 47 ns reverse recovery time, enabling efficient freewheeling in inductive loads. Thermal design is anchored to the mounting base (mb), which serves as both mechanical interface and thermal path - directly connected to drain - requiring PCB copper area optimization for heat dissipation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V automotive systems with load dump margin.
R_DS(on)	9.3 mΩ (typ) at V_GS = 5 V, I_D = 25 A, T_j = 25 °C - Enables <1.5 W conduction loss at 40 A, reducing heatsink requirements.
I_D (cont)	59 A at T_mb = 25 °C - Supports high-current 12 V loads such as fuel pumps and HVAC blowers without derating.
E_DS(AL)S	112 mJ - Single-pulse unclamped inductive energy handling capability, critical for relay/solenoid coil suppression.
R_th(j-mb)	2 K/W - Junction-to-mounting-base thermal resistance enables direct thermal coupling to PCB copper or heatsink.
Q_G(tot)	16.5 nC - Total gate charge determines driver strength requirement; compatible with standard 5 V microcontroller GPIOs via small buffer.
V_GS(th)	1.5 V (typ) - Ensures full enhancement at logic-level gate drive, eliminating need for level-shifting circuitry.

Pinout & Package

BUK9Y11-30B,115 is housed in a plastic single-ended surface-mounted LFPAK package (SOT669), featuring a thermally enhanced mounting base (mb) electrically tied to the drain terminal. The package provides low-profile footprint (6.2 × 5.0 mm), optimized for high-current PCB routing and thermal management via soldered copper pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Control input with ±15 V absolute max rating; designed for 4.5–5 V logic-level drive with fast 14 ns turn-on delay.
mb (mounting base)	Drain (D)	Exposed metal pad soldered to PCB; functions as primary drain connection and thermal path - must be routed to ground plane or heatsink.

Key Features

Feature	Design Value
Q101 automotive qualification	Validated per AEC-Q101 stress test requirements - suitable for safety-critical body electronics and power distribution modules.
Logic-level gate drive	V_GS(th) ≤ 2.0 V ensures full enhancement using 5 V MCU outputs without external gate drivers.
175 °C junction rating	Enables operation in high-ambient under-hood locations (e.g., engine control units, battery disconnect switches).
Low R_DS(on) × Q_G figure of merit	~154 mΩ·nC - balances conduction and switching losses for high-efficiency PWM motor control at 20–100 kHz.
Integrated source-drain diode	47 ns t_rr, 20 nC Q_r - supports fast freewheeling in brushed DC motor H-bridge and solenoid drive circuits.

Applications

Automotive Body Control Module

12 V DC Motor Drive

Use Scenario: Switching headlight, wiper, or seat adjustment loads in BCMs with centralized power distribution.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12 V resistive/inductive loads up to 59 A peak.

Use Value: Eliminates relay wear-out and contact bounce; enables PWM dimming and diagnostic current sensing via R_DS(on).

Use Scenario: Driving brushed DC fans, radiator cooling pumps, or HVAC blower motors in passenger compartments.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with fast 42 ns fall time for efficient PWM commutation.

Use Value: Reduces conduction loss by >40% vs. comparable 20 mΩ MOSFETs, lowering thermal stress in sealed enclosures.

Automotive Lighting Control

Solenoid & Actuator Interface

Use Scenario: Controlling LED matrix headlights or adaptive front-lighting systems with dynamic current regulation.

IC Role / Device Role / Timing Role: Precision current sink with analog dimming capability enabled by stable R_DS(on) over temperature.

Use Value: Maintains consistent brightness across −40 °C to +150 °C ambient due to low R_DS(on) tempco (1.8× increase from 25 °C to 175 °C).

Use Scenario: Energizing fuel injectors, transmission shift solenoids, or door lock actuators in powertrain and chassis modules.

IC Role / Device Role / Timing Role: Inductive load switch with built-in avalanche energy absorption (112 mJ) during turn-off transients.

Use Value: Prevents external TVS clamping components, simplifying BOM and improving system-level EMC performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V_GS; requires 10 V gate drive for optimal performance; not logic-level rated at 5 V.	Better suited for 12 V systems with dedicated gate drivers; less compatible with 5 V MCU direct drive.	Select when lower R_DS(on) justifies added gate drive complexity and higher cost.
IRL8721PBF	R_DS(on) = 12 mΩ @ 4.5 V_GS; TO-220 package; R_th(j-c) = 2.5 K/W; no automotive qualification.	Lacks AEC-Q101 certification and has higher thermal resistance - unsuitable for space-constrained automotive modules.	Consider only for non-automotive industrial 12 V switching where qualification and thermal performance are secondary.

Compared with STL220N3LLH6 and IRL8721PBF, BUK9Y11-30B,115 uniquely combines logic-level drive, AEC-Q101 compliance, and 2 K/W thermal resistance in a surface-mount LFPAK package - making it the only drop-in solution for automotive-grade 5 V-controlled high-current switching without gate driver overhead or qualification risk.

Availability

BUK9Y11-30B,115 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC motor drives, and solenoid actuation systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BUK9Y11-30B,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - delivering high-performance, reliable components for automotive, industrial, and consumer applications with emphasis on efficiency and miniaturization.

BUK9Y11-30B,115 belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS product line, engineered specifically for robust, high-current 12 V load switching in harsh automotive environments with minimal external components.

FAQ

Is BUK9Y11-30B,115 qualified for automotive use?

Yes - it is fully qualified to AEC-Q101 standards, including stress testing for temperature cycling, humidity, and mechanical shock. Its 175 °C maximum junction temperature and 112 mJ avalanche energy rating meet requirements for under-hood and power distribution applications in modern vehicles.

What is the recommended PCB layout for thermal performance?

Maximize copper area connected to the mounting base (pin mb), using ≥2 oz copper and multiple thermal vias to inner ground planes. Keep source traces wide and short to minimize inductance; avoid routing high-speed signals beneath the package to prevent coupling into the drain node.

Can BUK9Y11-30B,115 be used in high-frequency PWM applications?

Yes - with 14 ns turn-on delay, 42 ns fall time, and 16.5 nC total gate charge, it supports PWM frequencies up to 100 kHz in motor control. Gate resistor selection (typically 10–22 Ω) should balance switching speed against ringing and EMI in the specific layout.

Does the device include integrated protection features?

No internal protection circuitry (e.g., overtemperature shutdown or overcurrent limiting) is integrated. Protection relies on external design: gate resistor for dv/dt control, RC snubber for inductive spikes, and current-sense feedback loop for overload detection - all standard practice for discrete power FETs in automotive systems.

BUK9Y11-30B,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 5 V

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 1614 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

BUK9Y11-30B,115 FAQ

1.How can I place an order for BUK9Y11-30B,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9Y11-30B,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9Y11-30B,115 reliable?

The price and inventory of BUK9Y11-30B,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y11-30B,115 is usually 5 days.

3.What payment methods are accepted for BUK9Y11-30B,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9Y11-30B,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9Y11-30B,115?

BUK9Y11-30B,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9Y11-30B,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9Y11-30B,115?

For technical support, including BUK9Y11-30B,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y11-30B,115 requirements.

6.How does Aetrix verify that BUK9Y11-30B,115 is sourced from the original manufacturer or authorized distributors?

All BUK9Y11-30B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y11-30B,115 meets industry standards.

7.What is the process for return or replacement of BUK9Y11-30B,115?

All BUK9Y11-30B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y11-30B,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9Y11-30B,115 part is unused and in its original packaging.

Return procedure for BUK9Y11-30B,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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